Patents by Inventor Kothandaraman Ravindhran

Kothandaraman Ravindhran has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High quality gate oxides for VLSI devices
    Patent number: 4574466
    Abstract: In a 1.2 micron CMOS process, the gate oxide is formed by growing a 1000 Angstrom thickness of sacrificial oxide, immediately performing an oxide strip and then effecting a thin gate oxidation. The gate oxidation step is characterized by a temperature ramp from 700 to 950 degrees Centigrade in a flow of 9 liters per minute nitrogen and 0.36 liters per minute oxygen. At the 950 degrees Centigrade point, the nitrogen flow ceases and the oxygen flow increases to 9 liters per minute. The temperature is then downwardly ramped to 900 degrees Centigrade.
    Type: Grant
    Filed: December 10, 1984
    Date of Patent: March 11, 1986
    Assignee: GTE Communication Systems Corporation
    Inventors: George F. Hagner, Kothandaraman Ravindhran