Patents by Inventor Koto Umezawa

Koto Umezawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Film formation method and apparatus for semiconductor process
    Patent number: 8178448
    Abstract: Disclosed is a method for using a film formation apparatus to form a silicon nitride film by CVD on target substrates while suppressing particle generation. The apparatus includes a process container and an exciting mechanism attached on the process container. The method includes conducting a pre-coating process by performing pre-cycles and conducting a film formation process by performing main cycles. Each of the pre-cycles and main cycles alternately includes a step of supplying a silicon source gas and a step of supplying a nitriding gas with steps of exhausting gas from inside the process container interposed therebetween. The pre-coating process includes no period of exciting the nitriding gas by the exciting mechanism. The film formation process repeats a first cycle set that excites the nitriding gas by the exciting mechanism and a second cycle that does not excite the nitriding gas by the exciting mechanism.
    Type: Grant
    Filed: August 6, 2010
    Date of Patent: May 15, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Nobutake Nodera, Masanobu Matsunaga, Kazuhide Hasebe, Koto Umezawa, Pao-Hwa Chou
  • FILM FORMATION METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS
    Publication number: 20100304574
    Abstract: Disclosed is a method for using a film formation apparatus to form a silicon nitride film by CVD on target substrates while suppressing particle generation. The apparatus includes a process container and an exciting mechanism attached on the process container. The method includes conducting a pre-coating process by performing pre-cycles and conducting a film formation process by performing main cycles. Each of the pre-cycles and main cycles alternately includes a step of supplying a silicon source gas and a step of supplying a nitriding gas with steps of exhausting gas from inside the process container interposed therebetween. The pre-coating process includes no period of exciting the nitriding gas by the exciting mechanism. The film formation process repeats a first cycle set that excites the nitriding gas by the exciting mechanism and a second cycle that does not excite the nitriding gas by the exciting mechanism.
    Type: Application
    Filed: August 6, 2010
    Publication date: December 2, 2010
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Nobutake NODERA, Masanobu Matsunaga, Kazuhide Hasebe, Koto Umezawa, Pao-Hwa Chou