Abstract: A system for heating a load-lock chamber, particularly that of a plasma etching system for etching semiconductor wafer substrates. The load-lock chamber heating system includes a heater that is provided in fluid communication with a gas supply which contains an inert gas such as nitrogen. A gas pump pumps the gas from the gas supply through the heater, and from the heater into the load-lock chamber. The gas heats the load-lock chamber to prevent or minimize condensation of corrosive etching gases onto the interior surfaces of the load-lock chamber as well as the surfaces of substrates contained therein.