Abstract: A supercooling release device according to one aspect of the present disclosure releases a supercooled state of a heat storage material. The supercooling release device includes a first member and a second member capable of being brought into contact with each other. The first member and the second member each include a metal. While a load is continuously applied to at least one of the first member and the second member to bring at least a portion of a surface of the first member and at least a portion of a surface of the second member into close contact with each other, the supercooled state is maintained. When the supercooled state is to be released, the supercooling release device reduces the above load.

Abstract: A supercooling release device releases a supercooled state of a heat storage material. The supercooling release device includes a first member having a concave portion on a surface and a second member facing the surface and covering the concave portion. The second member can be for example brought into close contact with the first member. The supercooling release device for example applies a load to at least one of the first member and the second member to bring the first member and the second member into close contact with each other.

Abstract: A fluid heating device includes a pressurizing chamber configured to store a working fluid and a heat accumulator disposed in the pressurizing chamber. The heat accumulator includes a heat accumulating member configured to release heat by receiving a pressure applied to the working fluid. The fluid heating device has improved actuation efficiency.

Abstract: A fluid heating device includes a pressurizing chamber configured to store a working fluid and a heat accumulator disposed in the pressurizing chamber. The heat accumulator includes a heat accumulating member configured to release heat by receiving a pressure applied to the working fluid. The fluid heating device has improved actuation efficiency.

Abstract: A fine bubble generation promoter includes: one of a fatty acid and a fat-soluble vitamin in an amount within a range of 2.4 wt % to 33 wt %, inclusive; and a hydrocarbon in an amount within a range of 67 wt % to 97 wt %, inclusive. A total concentration of (i) one of the fatty acid and the fat-soluble vitamin and (ii) the hydrocarbon is 99 wt % or more.

Abstract: An organic EL element including: a TFT substrate having a TAOS-TFT; and an organic EL unit having a lower electrode. The lower electrode includes an aluminum containing metal layer, a transition metal containing oxide layer disposed between the aluminum containing metal layer and the TFT substrate, and an aluminum containing oxide layer disposed between the aluminum containing metal layer and the transition metal containing oxide layer and in contact with both the aluminum containing metal layer and the transition metal containing oxide layer. The aluminum containing oxide layer contains aluminum oxide. The transition metal containing oxide layer contains tungsten oxide and has a density of 6.5 g/cm3 or more.

Abstract: An organic EL element including: a TFT substrate having a TAOS-TFT; and an organic EL unit having a lower electrode. The lower electrode includes an aluminum containing metal layer, a transition metal containing oxide layer disposed between the aluminum containing metal layer and the TFT substrate, and an aluminum containing oxide layer disposed between the aluminum containing metal layer and the transition metal containing oxide layer and in contact with both the aluminum containing metal layer and the transition metal containing oxide layer. The aluminum containing oxide layer contains aluminum oxide. The transition metal containing oxide layer contains tungsten oxide and has a density of 6.5 g/cm3 or more.

Abstract: An electronic device includes a substrate, a first conductive layer disposed over the substrate, an organic insulating layer, including an organic material, disposed over the first conductive layer and having an aperture exposing a portion of the first conductive layer, a second conductive layer, which is metallic, covering a top face of the organic insulating layer, an inner circumferential face that faces the aperture in the organic insulating layer, and the exposed portion of the first conductive layer, and an intermediate layer that includes an oxide or a nitride, disposed only between the second conductive layer and the inner circumferential face that faces the aperture in the organic insulating layer. The first conductive layer and the second conductive layer are in contact at the bottom face of the aperture in the organic insulating layer.

Abstract: A hole injection layer and a second electrode are both formed to be continuous above a first electrode and above an auxiliary wiring. The hole injection layer contains a tungsten oxide. An UPS spectrum, obtained from a UPS measurement, has a protrusion appearing near a Fermi surface and within a region corresponding to a binding energy range lower than a top of a valence band, and the tungsten oxide satisfies a condition, determined from an XPS measurement, that a ratio in a number density of atoms other than tungsten atoms and oxygen atoms to the tungsten atoms does not exceed 0.83.

Abstract: An organic EL element comprises: a transparent electrode; a reflective electrode opposite the transparent electrode; and a light-emitting layer having a film thickness of 20 nm to 200 nm, between the electrodes. The reflective electrode is a layered film of: a metal film including Al as a main component and having a film thickness of at least 43 nm; and a Ni film, whose film thickness d satisfies: 0 nm<d <5 nm, layered with respect to an entirety of a surface, facing the light-emitting layer, of the metal film, without interposition of an oxide layer that covers the surface of the metal film entirely. A surface of the layered film facing the light-emitting layer has an average roughness Ra satisfying: 0.6 nm?Ra<2.0 nm and a maximum height difference Rmax satisfying: 5 nm?Rmax<20 nm.

Abstract: An electronic device includes a substrate, a first conductive layer disposed over the substrate, an organic insulating layer, including an organic material, disposed over the first conductive layer and having an aperture exposing a portion of the first conductive layer, a second conductive layer, which is metallic, covering a top face of the organic insulating layer, an inner circumferential face that faces the aperture in the organic insulating layer, and the exposed portion of the first conductive layer, and an intermediate layer that includes an oxide or a nitride, disposed only between the second conductive layer and the inner circumferential face that faces the aperture in the organic insulating layer. The first conductive layer and the second conductive layer are in contact at the bottom face of the aperture in the organic insulating layer.

Abstract: Provided is an organic EL element which withstands mass production of organic EL display panels, and promises driving at a low voltage and high luminous efficiency due to excellent hole-injection efficiency. Specifically, an organic EL element is formed by sequentially laminating an anode, a hole injection layer, a buffer layer, a light-emitting layer, and a cathode on one surface of a substrate. The hole injection layer is a at least 2 nm thick tungsten oxide layer formed under predetermined film forming conditions, and includes an occupied energy level that is 1.8 eV to 3.6 eV lower than a lowest energy level of a valence band of the hole injection layer in terms of a binding energy. This reduces the hole injection barrier between the anode and the hole injection layer and the hole injection barrier between the hole injection layer and the buffer layer.

Abstract: Provided is organic EL display panel and an organic EL display apparatus that can be driven at a low voltage and that exhibit excellent light-emitting efficiency. Included are a substrate, a first electrode, an auxiliary wiring, a hole injection layer, a functional layer, and a second electrode. The hole injection layer and the second electrode are formed to be continuous above the first electrode and above the auxiliary wiring. The second electrode and the auxiliary wiring are electrically connected by the hole injection layer in an organic EL display panel. The hole injection layer is a metal oxide film, and metal atoms constituting the metal oxide include both metal atoms at a maximum valence thereof and metal atoms at a valence less than the maximum valence. The metal oxide film includes a metal oxide crystal with a particle diameter on the order of nanometers.

Abstract: The present invention provides an organic EL display panel and an organic EL display apparatus that can be driven at a low voltage and that exhibit excellent light-emitting efficiency. Sequentially fixated on a substrate are: a first electrode; auxiliary wiring; a hole injection layer; a functional layer; and a second electrode. The hole injection layer and the second electrode are both formed to be continuous above the first electrode and above the auxiliary wiring. The second electrode and the auxiliary wiring are electrically connected by the hole injection layer. The hole injection layer contains tungsten oxide and at least 2 nm thick so as to have, in an electronic state thereof, an occupied energy level in a range between 1.8 eV and 3.6 eV lower than a lowest energy level of a valence band in terms of a binding energy.

Abstract: A method for manufacturing a light-emitting element. An anode is formed on a main surface of a substrate. A hole-injection layer is formed at least above the anode. At least the hole-injection layer is covered with a protective film. A bank which is provided with an aperture through which a portion of the protective film is exposed, is formed on the protective film by a wet process. The portion of the protective film exposed through the aperture is removed so that a portion of the hole-injection layer is exposed, a light-emitting layer is formed on the hole-injection layer exposed through the aperture, and a cathode is formed above the light-emitting layer. The protective film is resistant to a fluid used during the wet process.

Abstract: A planarization film is formed as a silicon oxide monolayer using, for instance, a spin coat method, through, for example, applying a silicon-containing organic solvent to an upper portion of a TFT layer and planarizing an upper surface of a resist film made up of a silicon-containing organic solvent, heating a predetermined processing fluid, e.g., peroxymonosulfuric acid, and discharging the processing fluid heated to, for example, 150° C., onto the planarized upper surface of the resist film such that organic components of the resist film are dissolved while silicon in the resist film is oxidized by the processing fluid.

Abstract: A hole injection layer and a second electrode are both formed to be continuous above a first electrode and above an auxiliary wiring. The hole injection layer contains a tungsten oxide. An UPS spectrum, obtained from a UPS measurement, has a protrusion appearing near a Fermi surface and within a region corresponding to a binding energy range lower than a top of a valence band, and the tungsten oxide satisfies a condition, determined from an XPS measurement, that a ratio in a number density of atoms other than tungsten atoms and oxygen atoms to the tungsten atoms does not exceed 0.83.

Abstract: Provided is an organic EL element which withstands mass production of organic EL display panels, and promises driving at a low voltage and high luminous efficiency due to excellent hole-injection efficiency. Specifically, an organic EL element is formed by sequentially laminating an anode, a hole injection layer, a buffer layer, a light-emitting layer, and a cathode on one surface of a substrate. The hole injection layer is a at least 2 nm thick tungsten oxide layer formed under predetermined film forming conditions, and includes an occupied energy level that is 1.8 eV to 3.6 eV lower than a lowest energy level of a valence band of the hole injection layer in terms of a binding energy. This reduces the hole injection barrier between the anode and the hole injection layer and the hole injection barrier between the hole injection layer and the buffer layer.

Abstract: The present invention provides an organic EL display panel and an organic EL display apparatus that can be driven at a low voltage and that exhibit excellent light-emitting efficiency. Sequentially fixated on a substrate are: a first electrode; auxiliary wiring; a hole injection layer; a functional layer; and a second electrode. The hole injection layer and the second electrode are both formed to be continuous above the first electrode and above the auxiliary wiring. The second electrode and the auxiliary wiring are electrically connected by the hole injection layer. The hole injection layer contains tungsten oxide and at least 2 nm thick so as to have, in an electronic state thereof, an occupied energy level in a range between 1.8 eV and 3.6 eV lower than a lowest energy level of a valence band in terms of a binding energy.

Abstract: An organic EL element comprises: a transparent electrode; a reflective electrode opposite the transparent electrode; and a light-emitting layer having a film thickness of 20 nm to 200 nm, between the electrodes. The reflective electrode is a layered film of: a metal film including Al as a main component and having a film thickness of at least 43 nm; and a Ni film, whose film thickness d satisfies: 0 nm<d<5 nm, layered with respect to an entirety of a surface, facing the light-emitting layer, of the metal film, without interposition of an oxide layer that covers the surface of the metal film entirely. A surface of the layered film facing the light-emitting layer has an average roughness Ra satisfying: 0.6 nm?Ra<2.0 nm and a maximum height difference Rmax satisfying: 5 nm?Rmax<20 nm.