Abstract: Disclosed are a current excitation type organic semiconductor laser containing a pair of electrodes, an organic laser active layer and an optical resonator structure between the pair of electrodes and a laser having an organic layer on a distributed feedback grating structure. The lasers include a continuous-wave laser, a quasi-continuous-wave laser and an electrically driven semiconductor laser diode.

Abstract: Disclosed are a current excitation type organic semiconductor laser containing a pair of electrodes, an organic laser active layer and an optical resonator structure between the pair of electrodes and a laser having an organic layer on a distributed feedback grating structure. The lasers include a continuous-wave laser, a quasi-continuous-wave laser and an electrically driven semiconductor laser diode.

Abstract: Disclosed are a current excitation type organic semiconductor laser containing a pair of electrodes, an organic laser active layer and an optical resonator structure between the pair of electrodes and a laser having an organic layer on a distributed feedback grating structure. The lasers include a continuous-wave laser, a quasi-continuous-wave laser and an electrically driven semiconductor laser diode.

Abstract: Disclosed are a current excitation type organic semiconductor laser containing a pair of electrodes, an organic laser active layer and an optical resonator structure between the pair of electrodes and a laser having an organic layer on a distributed feedback grating structure. The lasers include a continuous-wave laser, a quasi-continuous-wave laser and an electrically driven semiconductor laser diode.

Abstract: Disclosed are a current excitation type organic semiconductor laser containing a pair of electrodes, an organic laser active layer and an optical resonator structure between the pair of electrodes and a laser having an organic layer on a distributed feedback grating structure. The lasers include a continuous-wave laser, a quasi-continuous-wave laser and an electrically driven semiconductor laser diode.

Abstract: A delayed fluorescence material containing a mixture of an acceptor compound and a donor compound that satisfies the following formulae (1) to (4): T1A?S1>0.2 eV??(1) T1D?S1?0.2 eV??(2) |LUMOA|>2.0 eV??(3) |HOMOD|?5.3 eV??(4) wherein T1A represents the excited triplet energy of the acceptor compound; T1D represents the excited triplet energy defined of the donor compound; S1 represents the excited singlet energy of the exciplex; LUMOA represents the energy level of LUMO of the acceptor compound; and HOMOD represents the energy level of HOMO of the donor compound.

Abstract: The present invention provides a coating composition capable of forming a coating film that is applicable to a variety of industrial products, particularly automobile exterior panels, while exhibiting a high lightness and a low ultraviolet transmittance at a wavelength of 420 to 480 nm. The present invention relates to a coating composition comprising a chloride process titanium oxide pigment, a yellow iron oxide pigment, a carbon black pigment having a primary average particle size of 15 to 80 nm, and a resin composition, which is a vehicle-forming component.

Abstract: The present invention provides a coating composition capable of forming a coating film that is applicable to a variety of industrial products, particularly automobile exterior panels, while exhibiting a high lightness and a low ultraviolet transmittance at a wavelength of 420 to 480 nm. The present invention relates to a coating composition comprising a chloride process titanium oxide pigment, a yellow iron oxide pigment, a carbon black pigment having a primary average particle size of 15 to 80 nm, and a resin composition, which is a vehicle-forming component, wherein when the coating composition is applied to give a cured film having a thickness of 25 ?m, the resulting cured coating film has an average light transmittance within the range of 0.1 to 1.0% at a wavelength of 420 nm to 480 nm., and the invention also relates to a method for forming a multilayer coating film, comprising forming a color base coating film on a coating film obtained by applying the coating composition.

Abstract: A delayed fluorescence material containing a mixture of an acceptor compound and a donor compound that satisfies the following formulae (1) to (4): T1A?S1>0.2 eV??(1) T1D?S1?0.2 eV??(2) |LUMOA|>2.0 eV??(3) |HOMOD|?5.3 eV??(4) wherein T1A represents the excited triplet energy of the acceptor compound; T1D represents the excited triplet energy defined of the donor compound; S1 represents the excited singlet energy of the exciplex; LUMOA represents the energy level of LUMO of the acceptor compound; and HOMOD represents the energy level of HOMO of the donor compound.