Abstract: The present invention provides an image pickup device used to capture an image of an object by receiving light in a near infrared region reflected from the object. The image pickup device includes semiconductor light-receiving elements each having a light-receiving layer with a band gap wavelength of 1.65 to 3.0 ?m.

Abstract: A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38?x?0.68) layer and a GaAs1-ySby (0.25?y?0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.

Abstract: Affords Group III nitride semiconductor devices in which the leakage current from the Schottky electrode can be reduced. In a high electron mobility transistor 11, a supporting substrate 13 is composed of AlN, AlGaN, or GaN, specifically. An AlYGa1?YN epitaxial layer 15 has a full-width-at-half maximum of (0002) plane XRD of 150 sec or less. A GaN epitaxial layer 17 is provided between the gallium nitride supporting substrate and the AlYGa1?YN epitaxial layer (0<Y?1). A Schottky electrode 19 is provided on the AlYGa1?YN epitaxial layer 15. The Schottky electrode 19 constitutes a gate electrode of the high electron mobility transistor 11. The source electrode 21 is provided on the gallium nitride epitaxial layer 15. The drain electrode 23 is provided on the gallium nitride epitaxial layer 15.

Abstract: A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38?x?0.68) layer and a GaAs1-ySby (0.25?y?0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.

Abstract: The present invention provides an image pickup device used to capture an image of an object by receiving light in a near infrared region reflected from the object. The image pickup device includes semiconductor light-receiving elements each having a light-receiving layer with a band gap wavelength of 1.65 to 3.0 ?m.

Abstract: Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor (11) is provided with a supporting substrate (13) composed of gallium nitride, a buffer layer (15) composed of a first gallium nitride semiconductor, a channel layer (17) composed of a second gallium nitride semiconductor, a semiconductor layer (19) composed of a third gallium nitride semiconductor, and electrode structures (a gate electrode (21), a source electrode (23) and a drain electrode (25) for the transistor (11). The band gap of the third gallium nitride semiconductor is broader than that of the second gallium nitride semiconductor. The carbon concentration NC1 of the first gallium nitride semiconductor is 4×1017 cm?3 or more. The carbon concentration NC2 of the second gallium nitride semiconductor is less than 4×1016 cm?3.

Abstract: The invention offers a photodetector that has an N-containing InGaAs-based absorption layer having a sensitivity in the near-infrared region and that suppresses the dark current and a production method thereof. The photodetector is provided with an InP substrate 1, an N-containing InGaAs-based absorption layer 3 positioned above the InP substrate 1, a window layer 5 positioned above the N-containing InGaAs-based absorption layer 3, and an InGaAs buffer layer 4 positioned between the N-containing InGaAs-based absorption layer 3 and the window layer 5.

Abstract: Affords epitaxial substrates for vertical gallium nitride semiconductor devices that have a structure in which a gallium nitride film of n-type having a desired low carrier concentration can be provided on a gallium nitride substrate of n type. A gallium nitride epitaxial film (65) is provided on a gallium nitride substrate (63). A layer region (67) is provided in the gallium nitride substrate (63) and the gallium nitride epitaxial film (65). An interface between the gallium nitride substrate (43) and the gallium nitride epitaxial film (65) is positioned in the layer region (67). In the layer region (67), a peak value of donor impurity along an axis from the gallium nitride substrate (63) to the gallium nitride epitaxial film (65) is 1×1018 cm?3 or more. The donor impurity is at least either silicon or germanium.

Abstract: Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor (11) is provided with a supporting substrate (13) composed of gallium nitride, a buffer layer (15) composed of a first gallium nitride semiconductor, a channel layer (17) composed of a second gallium nitride semiconductor, a semiconductor layer (19) composed of a third gallium nitride semiconductor, and electrode structures (a gate electrode (21), a source electrode (23) and a drain electrode (25)) for the transistor (11). The band gap of the third gallium nitride semiconductor is broader than that of the second gallium nitride semiconductor. The carbon concentration NC1 of the first gallium nitride semiconductor is 4×1017 cm?3 or more. The carbon concentration NC2 of the second gallium nitride semiconductor is less than 4×1016 cm?3.

Abstract: Affords a Group III nitride semiconductor device having a structure that can improve the breakdown voltage. A Schottky diode (11) consists of a Group III nitride support substrate (13), a gallium nitride region (15), and a Schottky electrode (17). The Group III nitride support substrate (13) has electrical conductivity. The Schottky electrode (17) forms a Schottky junction on the gallium nitride region (15). The gallium nitride region (15) is fabricated on a principal face (13a) of the Group III nitride support substrate (13). The gallium nitride region (15) has a (10 12)-plane XRD full-width-at-half-maximum of 100 sec or less.

Abstract: Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor 11 is provided with a supporting substrate 13 composed of gallium nitride, a buffer layer 15 composed of a first gallium nitride semiconductor, a channel layer 17 composed of a second gallium nitride semiconductor, a semiconductor layer 19 composed of a third gallium nitride semiconductor, and electrode structures (a gate electrode 21, a source electrode 23 and a drain electrode 25) for the transistor 11. The band gap of the third gallium nitride semiconductor is broader than that of the second gallium nitride semiconductor. The carbon concentration NC1 of the first gallium nitride semiconductor is 4×1017 cm?3 or more. The carbon concentration NC2 of the second gallium nitride semiconductor is less than 4×1016 cm?3.

Abstract: Affords epitaxial substrates for vertical gallium nitride semiconductor devices that have a structure in which a gallium nitride film of n-type having a desired low carrier concentration can be provided on a gallium nitride substrate of n type. A gallium nitride epitaxial film (65) is provided on a gallium nitride substrate (63). A layer region (67) is provided in the gallium nitride substrate (63) and the gallium nitride epitaxial film (65). An interface between the gallium nitride substrate (43) and the gallium nitride epitaxial film (65) is positioned in the layer region (67). In the layer region (67), a peak value of donor impurity along an axis from the gallium nitride substrate (63) to the gallium nitride epitaxial film (65) is 1×1018 cm?3 or more. The donor impurity is at least either silicon or germanium.

Abstract: Affords Group III nitride semiconductor devices in which the leakage current from the Schottky electrode can be reduced. In a high electron mobility transistor 11, a supporting substrate 13 is composed of AlN, AlGaN, or GaN, specifically. An AlYGa1?YN epitaxial layer 15 has a full-width-at-half maximum of (0002) plane XRD of 150 sec or less. A GaN epitaxial layer 17 is provided between the gallium nitride supporting substrate and the AlYGa1?YN epitaxial layer (O<Y?1). A Schottky electrode 19 is provided on the AlYGa1?YN epitaxial layer 15. The Schottky electrode 19 constitutes a gate electrode of the high electron mobility transistor 11. The source electrode 21 is provided on the gallium nitride epitaxial layer 15. The drain electrode 23 is provided on the gallium nitride epitaxial layer 15.

Abstract: Affords high electron mobility transistors having a high-purity channel layer and a high-resistance buffer layer. A high electron mobility transistor 11 is provided with a supporting substrate 13 composed of gallium nitride, a buffer layer 15 composed of a first gallium nitride semiconductor, a channel layer 17 composed of a second gallium nitride semiconductor, a semiconductor layer 19 composed of a third gallium nitride semiconductor, and electrode structures (a gate electrode 21, a source electrode 23 and a drain electrode 25) for the transistor 11. The band gap of the third gallium nitride semiconductor is broader than that of the second gallium nitride semiconductor. The carbon concentration NC1 of the first gallium nitride semiconductor is 4×1017 cm?3 or more. The carbon concentration NC2 of the second gallium nitride semiconductor is less than 4×1016 cm?3.

Abstract: A manufacturing method and a semiconductor device produced by the method are provided, in which the semiconductor device can easily be manufactured while the hydrogen concentration is decreased. An N-containing InGaAs layer 3 is grown on an InP substrate by the MBE method, and thereafter a heat treatment is provided at a temperature in the range of 600° C. or more and less than 800° C., whereby the average hydrogen concentration of the N-containing InGaAs layer 3 is made equal to or 2×1017/cm3 or less than.

Abstract: The invention offers a photodetector that has an N-containing InGaAs-based absorption layer having a sensitivity in the near-infrared region and that suppresses the dark current and a production method thereof. The photodetector is provided with an InP substrate 1, an N-containing InGaAs-based absorption layer 3 positioned above the InP substrate 1, a window layer 5 positioned above the N-containing InGaAs-based absorption layer 3, and an InGaAs buffer layer 4 positioned between the N-containing InGaAs-based absorption layer 3 and the window layer 5.

Abstract: Affords a Group III nitride semiconductor device having a structure that can improve the breakdown voltage. A Schottky diode (11) consists of a Group III nitride support substrate (13), a gallium nitride region (15), and a Schottky electrode (17). The Group III nitride support substrate (13) has electrical conductivity. The Schottky electrode (17) forms a Schottky junction on the gallium nitride region (15). The gallium nitride region (15) is fabricated on a principal face (13a) of the Group III nitride support substrate (13). The gallium nitride region (15) has a (10 12)-plane XRD full-width-at-half-maximum of 100 sec or less.

Abstract: Affords Group III nitride semiconductor devices in which the leakage current from the Schottky electrode can be decreased. In a high electron mobility transistor 1, a supporting substrate 3 is composed of AlN, AlGaN, or GaN. An AlyGa1-yN epitaxial layer 5 has a surface roughness (RMS) of 0.25 mm or less, wherein the surface roughness is defined by a square area measuring 1 ?m per side. A GaN epitaxial layer 7 is provided between the AlyGa1-yN supporting substrate 3 and the AlyGa1-yN epitaxial layer 5. A Schottky electrode 9 is provided on the AlyGa1-yN epitaxial layer 5. A first ohmic electrode 11 is provided on the AlyGa1-yN epitaxial layer 5. A second ohmic electrode 13 is provided on the AlyGa1-yN epitaxial layer 5. One of the first and second ohmic electrodes 11 and 13 constitutes a source electrode, and the other constitutes a drain electrode. The Schottky electrode 9 constitutes a gate electrode of the high electron mobility transistor 1.

Abstract: A GaN substrate comprises a GaN single crystal substrate, an AlxGa1-xN intermediate layer (0<x?1) epitaxially grown on the substrate, and an GaN epitaxial layer grown on the intermediate layer. The intermediate layer is made of AlGaN and this AlGaN grows over the entire surface of the substrate with contaminants thereon and high dislocation regions therein. Thus, the intermediate layer is normally grown on the substrate, and a growth surface of the intermediate layer can be made flat. Since the growth surface is flat, a growth surface of the GaN epitaxial layer epitaxially grown on the intermediate layer is also flat.

Abstract: A GaN substrate comprises a GaN single crystal substrate, an AlxGa1-xN intermediate layer (0<x≦1) epitaxially grown on the substrate, and an GaN epitaxial layer grown on the intermediate layer. The intermediate layer is made of AlGaN and this AlGaN grows over the entire surface of the substrate with contaminants thereon and high dislocation regions therein. Thus, the intermediate layer is normally grown on the substrate, and a growth surface of the intermediate layer can be made flat. Since the growth surface is flat, a growth surface of the GaN epitaxial layer epitaxially grown on the intermediate layer is also flat.