Patents by Inventor Kouhei OHHASHI

Kouhei OHHASHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Piezoelectric thin film-stacked body, piezoelectric thin film substrate, piezoelectric thin film device, piezoelectric actuator, piezoelectric sensor, head assembly, head stack assembly, hard disk drive, printer head, and ink-jet printer device
    Patent number: 10944040
    Abstract: A piezoelectric thin film-stacked body is provided. A piezoelectric thin film-stacked body has a first electrode layer, a first intermediate layer stacked on the first electrode layer, a second intermediate layer stacked on the first intermediate layer, and a piezoelectric thin film stacked on the second intermediate layer, the first intermediate layer includes K, Na, and Nb, the second intermediate layer is a layer causing stress in a compression direction in the piezoelectric thin film, and the piezoelectric thin film includes (K,Na)NbO3.
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: March 9, 2021
    Assignee: TDK CORPORATION
    Inventors: Masaru Nanao, Kouhei Ohhashi, Kenta Ishii
  • PIEZOELECTRIC THIN FILM-STACKED BODY, PIEZOELECTRIC THIN FILM SUBSTRATE, PIEZOELECTRIC THIN FILM DEVICE, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HEAD ASSEMBLY, HEAD STACK ASSEMBLY, HARD DISK DRIVE, PRINTER HEAD, AND INK-JET PRINTER DEVICE
    Publication number: 20180159019
    Abstract: A piezoelectric thin film-stacked body is provided. A piezoelectric thin film-stacked body has a first electrode layer, a first intermediate layer stacked on the first electrode layer, a second intermediate layer stacked on the first intermediate layer, and a piezoelectric thin film stacked on the second intermediate layer, the first intermediate layer includes K, Na, and Nb, the second intermediate layer is a layer causing stress in a compression direction in the piezoelectric thin film, and the piezoelectric thin film includes (K,Na)NbO3.
    Type: Application
    Filed: December 4, 2017
    Publication date: June 7, 2018
    Applicant: TDK CORPORATION
    Inventors: Masaru NANAO, Kouhei OHHASHI, Kenta ISHII
  • Piezoelectric composition and piezoelectric device
    Patent number: 9537083
    Abstract: Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO3, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of Biu1MeO3.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: January 3, 2017
    Assignee: TDK CORPORATION
    Inventors: Taku Masai, Masamitsu Haemori, Masahito Furukawa, Junichi Yamazaki, Kouhei Ohhashi
  • PIEZOELECTRIC COMPOSITION AND PIEZOELECTRIC DEVICE
    Publication number: 20160141486
    Abstract: Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO3, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of Biu1MeO3.
    Type: Application
    Filed: March 7, 2014
    Publication date: May 19, 2016
    Applicant: TDK CORPORATION
    Inventors: Taku MASAI, Masamitsu HAEMORI, Masahito FURUKAWA, Junichi YAMAZAKI, Kouhei OHHASHI