Abstract: Provided are a conductive adhesive capable of ensuring both conductive properties and adhesion properties and an LED substrate using the conductive adhesive. The conductive adhesive contains a conductive filler, a binder resin, and a solvent as main components thereof, and the conductive filler contains a metal powder having an average particle size of 2 to 30 ?m as a main component thereof and contains ultrafine metal particles having an average particle size of 100 nm or less.

Abstract: A highly durable exhaust emission control device which is provided in a container disposed in an intermediate portion of an exhaust system, wherein the exhaust emission control device comprises (1) a heat-resistant porous body having communicating pores, (2) a mixture of copper oxide and aluminum oxide supported on the surface of the porous body, and (3) platinum supported on the surface and an inner portion of the mixture, the grain size of the copper oxide being from 0.1 ?m to 50 ?m. The exhaust emission control device is manufactured by preparing the heat-resistant porous body; (2) applying to the porous body a slurry of a mixture of copper oxide and aluminum oxide and/or compounds convertible into these oxides by firing, and baking the mixture and/or compounds; and (3) applying a water-soluble platinum compound to the porous body, and baking the platinum compound. The platinum compound may be applied with the oxide mixture and/or the compounds of copper and aluminum to the porous body.

Abstract: Aluminium nitride ceramics improved in heat radiation property used as a substrate for integrated circuits and package material, comprising a sintered article consisting mainly of aluminium nitride and having a thermal conductivity higher than 100.W/m.K at room temperature and a surface layer consisting mainly of aluminium nitride or oxide glass deposited on the sintered article. A paste of aluminium nitride powder or oxide glass powder is coated on a surface of the sintered article of aluminium nitride and then is sintered to prepare a dense smooth surface layer.

Abstract: A highly durable exhaust emission control device which is provided in a container disposed in an intermediate portion of an exhaust system, wherein the exhaust emission control device comprises (1) a heat-resistant porous body having communicating pores, (2) a mixture of copper oxide and aluminum oxide supported on the surface of the porous body, and (3) platinum supported on the surface and an inner portion of the mixture, the grain size of the copper oxide being from 0.1 &mgr;m to 50 &mgr;m. The exhaust emission control device is manufactured by preparing the heat-resistant porous body; (2) applying to the porous body a slurry of a mixture of copper oxide and aluminum oxide and/or compounds convertible into these oxides by firing, and baking the mixture and/or compounds; and (3) applying a water-soluble platinum compound to the porous body, and baking the platinum compound. The platinum compound may be applied with the oxide mixture and/or the compounds of copper and aluminum to the porous body.

Abstract: A highly durable exhaust emission control device which is provided in a container disposed in an intermediate portion of an exhaust system, wherein the exhaust emission control device comprises (1) a heat-resistant porous body having communicating pores, (2) a mixture of copper oxide and aluminum oxide supported on the surface of the porous body, and (3) platinum supported on the surface and an inner portion of the mixture, the grain size of the copper oxide being from 0.1 &mgr;m to 50 &mgr;m. The exhaust emission control device is manufactured by preparing the heat-resistant porous body; (2) applying to the porous body a slurry of a mixture of copper oxide and aluminum oxide and/or compounds convertible into these oxides by firing, and baking the mixture and/or compounds; and (3) applying a water-soluble platinum compound to the porous body, and baking the platinum compound. The platinum compound may be applied with the oxide mixture and/or the compounds of copper and aluminum to the porous body.

Abstract: Aluminium nitride ceramics improved in heat radiation property used as a substrate for integrated circuits and package material, comprising a sintered article consisting mainly of aluminium nitride and having a thermal conductivity higher than 100.multidot.W/m.multidot.K at room temperature and a surface layer consisting mainly of aluminium nitride or oxide glass deposited on the sintered article. A paste of aluminium nitride powder or oxide glass powder is coated on a surface of the sintered article of aluminium nitride and then is sintered to prepare a dense smooth surface layer.

Abstract: A metallized ceramic substrate having a smooth plating layer comprises a ceramic substrate containing aluminum nitride as a main component; a tungsten- and/or molybdenum-based metallized layer formed on at least one face of the ceramic substrate; and a nickel-based plating layer formed on the metallized layer wherein the plating layer has a thickness of not greater than 2 .mu.m and a surface roughness (Ra) of not greater than 2 .mu.m. Alternatively, the plating layer on the ceramic substrate may comprise a first nickel-based plating layer having a thickness of not greater than 2 .mu.m and a second gold-based plating layer having a thickness of not greater than 1 .mu.m wherein the gold-based plating layer has a surface roughness (Ra) of 2 .mu.m or less.

Abstract: Aluminium nitride ceramics improved in heat radiation property used as a substrate for integrated circuits and package material, comprising a sintered article consisting mainly of aluminium nitride and having a thermal conductivity higher than 100.multidot.W/m.multidot.K at room temperature and a surface layer consisting mainly of aluminium nitride or oxide glass deposited on the sintered article.A paste of aluminium nitride powder or oxide glass powder is coated on a surface of the sintered article of aluminium nitride and then is sintered to prepare a dense smooth surface layer.

Abstract: A heat conductive aluminum nitride sintered body contains 100 parts by weight of aluminum nitride, at least 0.005 parts by weight and not more than 0.5 parts by weight of carbon, at least 0.01 parts by weight and not more than 15 parts by weight of a rare earth aluminum oxide in terms of the simple substance of a rare earth element, and at least 0.01 parts by weight and not more than 15 parts by weight of at least one element selected from a group of compounds containing elements belonging to the groups IVB, VB and VIB of the periodic table in terms of the simple substance of the element. Such a sintered body has a heat conductivity of at least 100 W/m.multidot.K. and not more than 270 W/m.multidot.K. at room temperature.

Abstract: A heat conductive aluminum nitride sintered body contains 100 parts by weight of aluminum nitride, at least 0.005 parts by weight and not more than 0.5 parts by weight of carbon, at least 0.01 parts by weight and not more than 15 parts by weight of a rare earth aluminum oxide in terms of the simple substance of a rare earth element, and at least 0.01 parts by weight and not more than 15 parts by weight of at least one element selected from a group of compounds containing elements belonging to the groups IVB, VB and VIB of the periodic table in terms of the simple substance of the element. Heat conductivity of the aluminum nitride sintered body is at least 100 W/m.multidot.K and not more than 270 W/m.multidot.K at the ordinary temperature. According to a method of preparing such an aluminum nitride sintered body, at least 0.01 parts by weight and not more than 5 parts by weight of carbon, at least 0.01 parts by weight and not more than 15 parts by weight of an oxide of a rare earth element, and at least 0.

Abstract: An AlN sintered body which has a color within the range of gray to black and a thermal conductivity within the range of 100 to 270 W/m.multidot.K at room temperature. Such a body is useful as an electronic material and a method of preparing the same. The AlN sintered body contains 100 parts by weight of AlN, 0.005 to 0.5 parts by weight of carbon, not more than 1 part by weight of a boron compound in terms of the simple substance of boron, 0.01 to 15 parts by weight of a rare earth aluminum oxide in terms of the simple substance of the rare earth element, and 0.01 to 15 parts by weight of a compound containing an element belonging to the group IVB of the periodic table in terms of the simple substance of the element. This AlN sintered body is obtained by shaping a mixture of the above components into a prescribed configuration and thereafter firing the as-formed compact in a non-oxidizing atmosphere containing at least 10 percent by volume of nitrogen, at a temperature of 1500.degree. to 2100.degree. C.