Patents by Inventor Kouhei Watanuki

Kouhei Watanuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7595414
    Abstract: To provide a metal complex compound capable of being suitably used for manufacturing a metal-containing thin film by the CVD method and a method for preparing a metal-containing thin film. A metal complex compound comprising a ?-diketonato ligand having an alkoxyalkyl-methyl group, and a method for preparing a metal-containing thin film using the metal complex compound by the CVD method.
    Type: Grant
    Filed: March 15, 2005
    Date of Patent: September 29, 2009
    Assignee: UBE Industries, Ltd.
    Inventors: Takumi Kadota, Chihiro Hasegawa, Kouhei Watanuki, Hiroyuki Sakurai, Hiroki Kanato
  • Publication number: 20080254216
    Abstract: [PROBLEMS] To provide a metal complex compound capable of being suitably used for manufacturing a metal-containing thin film by the CVD method and a method for preparing a metal-containing thin film. [MEANS FOR SOLVING PROBLEMS] A metal complex compound comprising a ?-diketonato ligand having an alkoxyalkyl-methyl group, and a method for preparing a metal-containing thin film using the metal complex compound by the CVD method.
    Type: Application
    Filed: March 15, 2005
    Publication date: October 16, 2008
    Applicant: Ube Industries, Ltd.
    Inventors: Takumi Kadota, Chihiro Hasegawa, Kouhei Watanuki, Hiroyuki Sakurai, Hiroki Kanato
  • Patent number: 6992200
    Abstract: Copper-containing thin films can be industrially advantageously formed by chemical vapor deposition using as the copper source a divalent copper complex bearing ?-diketonato ligands having silyl ether linkage. A representative example of the divalent copper complex is represented by the formula (I): wherein Z is hydrogen or alkyl; X is a group represented by the formula (I—I), in which Ra is alkylene, and each of Rb, Rc and Rd is alkyl; and Y is an alkyl group or a group represented by the formula (I—I), in which Ra is alkylene, and each of Rb, Rc and Rd is alkyl.
    Type: Grant
    Filed: January 31, 2003
    Date of Patent: January 31, 2006
    Assignee: UBE Industries, Ltd.
    Inventors: Takumi Kadota, Chihiro Hasegawa, Kouhei Watanuki
  • Publication number: 20050080282
    Abstract: Copper-containing thin films can be industrially advantageously formed by chemical vapor deposition using as the copper source a divalent copper complex bearing ?-diketonato ligands having silyl ether linkage. A representative example of the divalent copper complex is represented by the formula (I): wherein Z is hydrogen or alkyl; X is a group represented by the formula (I-I), in which Ra is alkylene, and each of Rb, Rc and Rd is alkyl; and Y is an alkyl group or a group represented by the formula (I-I), in which Ra is alkylene, and each of Rb, Rc and Rd is alkyl.
    Type: Application
    Filed: January 31, 2003
    Publication date: April 14, 2005
    Applicant: Ube Indstries, Ltd.
    Inventors: Takumi Kadota, Chihiro Hasegawa, Kouhei Watanuki
  • Publication number: 20020103394
    Abstract: An organometallic copper complex having the following formula is favorably employable for preparing copper metal film by chemical vapor deposition: 1
    Type: Application
    Filed: November 6, 2001
    Publication date: August 1, 2002
    Inventors: Takumi Kadota, Tsutomu Takai, Kouhei Watanuki