Abstract: A semiconductor wafer inspection method includes: an imaging step in which a first image being an image of the chamfered surface seen from the main surface side and a second image being an image of the chamfered surface seen from the back surface side are taken; a calculation step in which a first width is obtained based on the first image, the first width being a width of the chamfered surface seen from the main surface side, a second width is obtained based on the second image, the second width being a width of the chamfered surface seen from the back surface side, and a ratio of the first width to the second width thus obtained is calculated; and a shape determination step in which a form of the chamfered surface is determined to be abnormal in a case where the ratio is out of a predetermined range.

Abstract: A semiconductor wafer inspection method includes: an imaging step in which a first image being an image of the chamfered surface seen from the main surface side and a second image being an image of the chamfered surface seen from the back surface side are taken; a calculation step in which a first width is obtained based on the first image, the first width being a width of the chamfered surface seen from the main surface side, a second width is obtained based on the second image, the second width being a width of the chamfered surface seen from the back surface side, and a ratio of the first width to the second width thus obtained is calculated; and a shape determination step in which a form of the chamfered surface is determined to be abnormal in a case where the ratio is out of a predetermined range.

Abstract: A method for manufacturing semiconductor wafers is provided. According to this invention, wafers are obtained by slicing a single-crystal semiconductor ingot. The sliced wafers are beveled at their peripheral rims. The beveled wafers are flattened by a lapping process. The front and the rear surfaces of the flattened wafers are spin-etched with an acid etchant liquid. The glossiness of the rear surfaces of the spin-etched wafers is controlled to a value of 130-300 %. The front surfaces of the wafers whose rear surfaces have been spin-etched are polished, thereby obtaining mirror-polished surfaces. The front surfaces may also be spin-etched prior to polishing.

Abstract: A method processes a semiconductor wafer by etching the wafer, which has been smoothed by rough lapping, with alkaline solution. A rod is sliced into a plurality of wafers. The peripheral edges of the wafers are chamfered. The processed strain layers over the wafers due to chamfering are smoothed and planarized. The processed strain layers are then removed by etching with alkaline solution. The etched wafers are mirror polished. Lastly, the mirror-polished wafers are cleaned.