Patents by Inventor KOUICHI ITABASI

KOUICHI ITABASI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solid-state imaging element and method for manufacturing the same, and electronic device
    Patent number: 10847561
    Abstract: The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element.
    Type: Grant
    Filed: September 28, 2017
    Date of Patent: November 24, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Kouichi Itabasi, Yuuji Nishimura, Mitsuru Ishikawa, Yuichi Seki, Masaya Shimoji
  • SOLID-STATE IMAGING ELEMENT AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE
    Publication number: 20200185443
    Abstract: The present technology relates to a solid-state imaging element that is capable of suppressing occurrence of flares, ghosts, and color-mixing, and is capable of suppressing occurrence of stains caused by moisture and a method for manufacturing the same, and an electronic device. The solid-state imaging element includes a pixel in which a single-layered anti-reflective film is formed on a surface of a microlens and a pixel in which a double-layered anti-reflective film is formed on the surface of the microlens. For example, the present technology is applicable to a rear surface irradiation-type solid-state imaging element.
    Type: Application
    Filed: September 28, 2017
    Publication date: June 11, 2020
    Applicant: Sony Semiconductor Solutions Corporation
    Inventors: Kouichi ITABASI, Yuuji NISHIMURA, Mitsuru ISHIKAWA, Yuichi SEKI, Masaya SHIMOJI
  • Solid-state imaging device, method of manufacturing the same, and electronic apparatus
    Patent number: 10008529
    Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: June 26, 2018
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Takashi Nakashikiryo, Yoshiaki Kitano, Yuuji Nishimura, Kouichi Itabasi, Ryou Chiba, Yosuke Takita, Mitsuru Ishikawa, Toyomi Jinwaki, Yuichi Seki, Masaya Shimoji, Yoichi Ootsuka, Takafumi Nishi
  • SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
    Publication number: 20170278889
    Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.
    Type: Application
    Filed: September 17, 2015
    Publication date: September 28, 2017
    Inventors: TAKASHI NAKASHIKIRYO, YOSHIAKI KITANO, YUUJI NISHIMURA, KOUICHI ITABASI, RYOU CHIBA, YOSUKE TAKITA, MITSURU ISHIKAWA, TOYOMI JINWAKI, YUICHI SEKI, MASAYA SHIMOJI, YOICHI OOTSUKA, TAKAFUMI NISHI