Abstract: The present invention relates to a polyimide resin surface modifier which modifies the surface of a polyimide resin to permit easy absorption of metal ions, and a surface-modifying method for polyimide resins using the same. The surface modifier contains an alkali component, an organic solvent having hydroxy groups and a boiling point of 120° C. or higher, and a water content of 0-10% by weight. The surface-modifying method includes a printing process wherein a predetermined pattern is printed on the surface of a polyimide resin substrate using the polyimide resin surface modifier, an organic solvent-removing process wherein an organic solvent in the polyimide resin surface modifier pattern-printed on the surface of said polyimide resin substrate is removed and a water-treatment process wherein said polyimide resin surface modifier after removing the organic solvent is brought into contact with water.

Abstract: The purpose of the present invention is to provide a method for using a metal ion solution of low concentration to efficiently form a metal film pattern of excellent accuracy and reliable adhesion on a resin substrate. A resin substrate having a metal film pattern formed thereon is produced by a method that includes the following steps (a) to (e): (a) a step for pattern-printing of a latent image agent (2) onto the surface of a resin substrate (1) ; (b) a step for bringing the area imprinted with the latent image agent (2) into contact with a solution containing metal ions, and forming a metal salt (3); (c) a step for bringing the metal salt (3) into contact with an acidic treatment liquid containing a reducing agent, and reducing the metal salt; (d) a step for forming an electroless nickel plating film (5) on the area imprinted with the latent image agent; and (e) a step for precipitating an electroless copper plating (6) onto the surface of the nickel plating film (5).

Abstract: The present invention relates to a polyimide resin surface modifier which modifies the surface of a polyimide resin to permit easy absorption of metal ions, and a surface-modifying method for polyimide resins using the same. The surface modifier contains an alkali component, an organic solvent having hydroxy groups and a boiling point of 120° C. or higher, and a water content of 0-10% by weight. The surface-modifying method includes a printing process wherein a predetermined pattern is printed on the surface of a polyimide resin substrate using the polyimide resin surface modifier, an organic solvent-removing process wherein an organic solvent in the polyimide resin surface modifier pattern-printed on the surface of said polyimide resin substrate is removed and a water-treatment process wherein said polyimide resin surface modifier after removing the organic solvent is brought into contact with water.

Abstract: The present invention relates to a polyimide resin surface modifier which modifies the surface of a polyimide resin to permit easy absorption of metal ions, and a surface-modifying method for polyimide resins using the same. The surface modifier contains an alkali component, an organic solvent having hydroxy groups and a boiling point of 120° C. or higher, and a water content of 0-10% by weight. The surface-modifying method includes a printing process wherein a predetermined pattern is printed on the surface of a polyimide resin substrate using the polyimide resin surface modifier, an organic solvent-removing process wherein an organic solvent in the polyimide resin surface modifier pattern-printed on the surface of said polyimide resin substrate is removed and a water-treatment process wherein said polyimide resin surface modifier after removing the organic solvent is brought into contact with water.

Abstract: The purpose of the present invention is to provide a method for using a metal ion solution of low concentration to efficiently form a metal film pattern of excellent accuracy and reliable adhesion on a resin substrate. A resin substrate having a metal film pattern formed thereon is produced by a method that includes the following steps (a) to (e): (a) a step for pattern-printing of a latent image agent (2) onto the surface of a resin substrate (1) ; (b) a step for bringing the area imprinted with the latent image agent (2) into contact with a solution containing metal ions, and forming a metal salt (3); (c) a step for bringing the metal salt (3) into contact with an acidic treatment liquid containing a reducing agent, and reducing the metal salt; (d) a step for forming an electroless nickel plating film (5) on the area imprinted with the latent image agent; and (e) a step for precipitating an electroless copper plating (6) onto the surface of the nickel plating film (5).

Abstract: The present invention provides a method of preparing directly a desired nano-structure of oxide without electrolyzing the target oxide, a nano-structure having structural resistance and various useful uses of the nano-structure. Into a solution containing a fluoride complex ion comprising metal element of the target oxide in which the metal is at least one selected from the group consisting of transition metal elements, group IA elements, group IIA elements, group IIIB elements, group IVB elements, group VB elements and group VIB elements, a template having nano-structure made from oxide is immersed, and the reaction condition is adjusted to substitute oxide of the template with the target oxide.

Abstract: A thermoelectric semiconductor element is disclosed which is particularly low in toxicity and inexpensive. The element is mainly composed of a complex oxide comprising strontium and titanium. An oxide semiconductor possessing oxygen deficiency is used as the n-type element. According to the invention, as compared with a thermoelectric semiconductor element for thermoelectric cooling using a conventional Bi-Te thermoelectric semiconductor which is particularly toxic due to addition of Se or the like, the toxicity of the n-type semiconductor element part is lowered, and a thermoelectric semiconductor element excellent in performance is obtained.

Abstract: A piezoelectric ceramic comprising at least two kinds of ceramic domains that are different from each other either in composition or in piezoelectric characteristics. It is made possible to produce a piezoelectric ceramic with better piezoelectric characteristics than that composed of a single kind of ceramic domain by having the compositions or the piezoelectric characteristics of each ceramic domain properly selected. For example, it is possible to obtain a piezoelectric ceramic of an extremely small rate of change in resonance frequency in response to a change in temperature by having a ceramic domain with a positive rate of change in resonance frequency in response to a change in temperature and the one with a negative rate of change in resonance frequency in response to a change in temperature combined.

Abstract: A thermoelectric semiconductor device having a porous structure and an air-tight sealing structure maintaining it in a deaerated state is disclosed. A refrigeration panel comprising a plurality of p-type and n-type semiconductor elements each having a structure mentioned above, in which the elements are arranged alternatively and electrically connected in series is also disclosed.

Abstract: An oxide superconductive material comprising constituent elements mainly composed of ABiCuO in which A comprises at least one element of alkaline earth metals, and having a C-plane orientation, and a method of orienting such superconductive materials by hot extrusion from a rectangular nozzle.

Abstract: A multi-layer ceramic capacitor having a large capacitance comprising:(a) internal electrode layers whose thickness is y .mu.m, and(b) ceramic dielectric layers, whose thickness is x .mu.m, extending between the internal electrode layers, where x, y and x/y are defined by the formula 1.0.ltoreq.x.ltoreq.7.0, 0.07.ltoreq.y.ltoreq.0.7 and 10.0.ltoreq.x/y.ltoreq.100.0 respectively.

Abstract: A thermoelectric semiconductor device having a porous structure and an air-tight sealing structure maintaining it in a deaerated state is disclosed. A refrigeration panel comprising a plurality of p-type and n-type semiconductor elements each having a structure mentioned above, in which the elements are arranged alternatively and electrically connected in series is also disclosed.