Abstract: The objective of the present invention is to use brightness images acquired under different energy conditions to estimate the size of a defect in the depth direction in a simple manner. A charged-particle beam device according to the present invention determines the brightness ratio for each irradiation position on a brightness image while changing parameters varying the signal amount, estimates the position of the defect in the depth direction on the basis of the parameters at which the brightness ratio is at a minimum, and estimates the size of the defect in the depth direction on the basis of the magnitude of the brightness ratio (see FIG. 5).

Abstract: The objective of the present invention is to use brightness images acquired under different energy conditions to estimate the size of a defect in the depth direction in a simple manner. A charged-particle beam device according to the present invention determines the brightness ratio for each irradiation position on a brightness image while changing parameters varying the signal amount, estimates the position of the defect in the depth direction on the basis of the parameters at which the brightness ratio is at a minimum, and estimates the size of the defect in the depth direction on the basis of the magnitude of the brightness ratio (see FIG. 5).

Abstract: The purpose of the present invention is to provide a charged particle ray device which is capable of simply estimating the cross-sectional shape of a pattern. The charged particle ray device according to the present invention acquires a detection signal for each different discrimination condition of an energy discriminator, and estimates the cross-sectional shape of a sample by comparing the detection signal for each discrimination condition with a reference pattern (see FIG. 5).

Abstract: The purpose of the present invention is to provide a charged particle ray device which is capable of simply estimating the cross-sectional shape of a pattern. The charged particle ray device according to the present invention acquires a detection signal for each different discrimination condition of an energy discriminator, and estimates the cross-sectional shape of a sample by comparing the detection signal for each discrimination condition with a reference pattern (see FIG. 5).

Abstract: The purpose of the present invention is to provide a charged-particle beam device capable of stable performance of processes such as a measurement or test, independent of fluctuations in sample electric electric potential or the like. To this end, this charged-particle beam device comprises an energy filter for filtering the energy of charged particles released from the sample and a deflector for deflecting the charged particles released from the sample toward the energy filter. A control device generates a first image on the basis of the output of a detector, adjusts the voltage applied to the energy filter so that the first image reaches a prescribed state, and calculates deflection conditions for the deflector on the basis of the post-adjustment voltage applied to the energy filter.

Abstract: The purpose of the present invention is to provide a charged particle ray device which is capable of simply estimating the cross-sectional shape of a pattern. The charged particle ray device according to the present invention acquires a detection signal for each different discrimination condition of an energy discriminator, and estimates the cross-sectional shape of a sample by comparing the detection signal for each discrimination condition with a reference pattern (see FIG. 5).

Abstract: The purpose of the present invention is to provide a charged-particle beam device capable of stable performance of processes such as a measurement or test, independent of fluctuations in sample electric electric potential or the like. To this end, this charged-particle beam device comprises an energy filter for filtering the energy of charged particles released from the sample and a deflector for deflecting the charged particles released from the sample toward the energy filter. A control device generates a first image on the basis of the output of a detector, adjusts the voltage applied to the energy filter so that the first image reaches a prescribed state, and calculates deflection conditions for the deflector on the basis of the post-adjustment voltage applied to the energy filter.

Abstract: The purpose of the present invention is to reduce the amount of charged particles that are lost by colliding with the interior of a column of a charged particle beam device, and detect charged particles with high efficiency. To achieve this purpose, proposed is a charged particle beam device provided with: an objective lens that focuses a charged particle beam; a detector that is disposed between the objective lens and a charged particle source; a deflector that deflects charged particles emitted from a sample such that the charged particles separate from the axis of the charged particle beam; and a plurality of electrodes that are disposed between the deflector and the objective lens and that form a plurality of electrostatic lenses for focusing the charged particles emitted from the sample on a deflection point of the deflector.

Abstract: The purpose of the present invention is to reduce the amount of charged particles that are lost by colliding with the interior of a column of a charged particle beam device, and detect charged particles with high efficiency. To achieve this purpose, proposed is a charged particle beam device provided with: an objective lens that focuses a charged particle beam; a detector that is disposed between the objective lens and a charged particle source; a deflector that deflects charged particles emitted from a sample such that the charged particles separate from the axis of the charged particle beam; and a plurality of electrodes that are disposed between the deflector and the objective lens and that form a plurality of electrostatic lenses for focusing the charged particles emitted from the sample on a deflection point of the deflector.

Abstract: A single-element ultrasonic sensor includes a single transducer element and transmits an ultrasonic wave on the basis of a pulse wave. An ultrasonic array sensor includes a plurality of transducer elements and receives an ultrasonic reflected wave. A pulsar supplies the pulse wave to the single element ultrasonic sensor. A receiver receives electric signals from the transducer elements included in the ultrasonic array sensor. An amplification and conversion unit amplifies the electric signals received from the transducer elements included in the ultrasonic array sensor, converts the electric signals into digital signals, and arranges the digital signals in a serial order so as to generate a serial digital signal. An image generator generates an image on the basis of the serial digital signal.

Abstract: A single-element ultrasonic sensor includes a single transducer element and transmits an ultrasonic wave on the basis of a pulse wave. An ultrasonic array sensor includes a plurality of transducer elements and receives an ultrasonic reflected wave. A pulsar supplies the pulse wave to the single element ultrasonic sensor. A receiver receives electric signals from the transducer elements included in the ultrasonic array sensor. An amplification and conversion unit amplifies the electric signals received from the transducer elements included in the ultrasonic array sensor, converts the electric signals into digital signals, and arranges the digital signals in a serial order so as to generate a serial digital signal. An image generator generates an image on the basis of the serial digital signal.

Abstract: An evaluation method of residual stress in water jet peening includes a step of creating an analytical model including meshes according to a water jet peening (WJP) object, the shape of a nozzle, and an injection distance, a step of inputting WJP execution conditions, a step of calculating the internal pressure pBi of a cavitation bubble and a bubble number density ngi through jet flow analysis for a jet flow jetting from the nozzle, a step of calculating cavitation energy according to the internal pressure pBi of a cavitation bubble and a bubble number density ngi (S4), a step of calculating the burst energy of cavitation bubbles from the cavitation energy C, and a step of calculating the compressive residual stress of the WJP object from the collapse pressure of cavitation bubbles. Accordingly, the residual stress of the WJP object can be evaluated precisely in a shorter time.

Abstract: A high-pressure water jet is injected from a nozzle scanned and a shock wave generated due to the collapse of bubbles included in the water jet is impacted on a WJP execution object. Tensile residual stress close to the surface of the WJP execution object is improved to compressive residual stress. The shock wave is detected by a pressure sensor and a shock wave generation frequency is obtained. Whether the obtained shock wave generation frequency is larger than a set value or not is decided. When the shock wave generation frequency is larger than the set value, a high-pressure pump is stopped and the injection of the water jet from the nozzle is stopped. When the shock wave generation frequency is equal to or smaller than the set value, the operation condition of the high-pressure pump is changed.

Abstract: There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stage 109 that holds a semiconductor sample 118, multiple probes 106 used to measure electrical characteristics of a semiconductor device on the semiconductor sample 118, a power source that applies voltage and/or current to the probe 106, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample 118.

Abstract: An evaluation method of residual stress in water jet peening includes a step of creating an analytical model including meshes according to a water jet peening (WJP) object, the shape of a nozzle, and an injection distance, a step of inputting WJP execution conditions, a step of calculating the internal pressure pBi of a cavitation bubble and a bubble number density ngi through jet flow analysis for a jet flow jetting from the nozzle, a step of calculating cavitation energy according to the internal pressure pBi of a cavitation bubble and a bubble number density ngi (S4), a step of calculating the burst energy of cavitation bubbles from the cavitation energy C, and a step of calculating the compressive residual stress of the WJP object from the collapse pressure of cavitation bubbles. Accordingly, the residual stress of the WJP object can be evaluated precisely in a shorter time.

Abstract: A high-pressure water jet is injected from a nozzle scanned and a shock wave generated due to the collapse of bubbles included in the water jet is impacted on a WJP execution object. Tensile residual stress close to the surface of the WJP execution object is improved to compressive residual stress. The shock wave is detected by a pressure sensor and a shock wave generation frequency is obtained. Whether the obtained shock wave generation frequency is larger than a set value or not is decided. When the shock wave generation frequency is larger than the set value, a high-pressure pump is stopped and the injection of the water jet from the nozzle is stopped. When the shock wave generation frequency is equal to or smaller than the set value, the operation condition of the high-pressure pump is changed.

Abstract: There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stage 109 that holds a semiconductor sample 118, multiple probes 106 used to measure electrical characteristics of a semiconductor device on the semiconductor sample 118, a power source that applies voltage and/or current to the probe 106, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample 118.

Abstract: There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stage 109 that holds a semiconductor sample 118, multiple probes 106 used to measure electrical characteristics of a semiconductor device on the semiconductor sample 118, a power source that applies voltage and/or current to the probe 106, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample 118.

Abstract: There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stage 109 that holds a semiconductor sample 118, multiple probes 106 used to measure electrical characteristics of a semiconductor device on the semiconductor sample 118, a power source that applies voltage and/or current to the probe 106, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample 118.

Abstract: The object of the present invention is to transmit the position information of a defect that has been specified by means of a circuit pattern inspection apparatus quickly and precisely so that the position information is efficiently used in another apparatus. Marking is carried out on the peripheral area of the defect by use of a charged particle beam irradiation mechanism of the inspection apparatus. The marking realizes sharing of the defect position information with another apparatus. The marking technique includes deposition of a deposit and charging up by means of irradiation of a charged particle beam. The marking in the inspection apparatus allows the defect position information to be transmitted to another apparatus more correctly and easily, and as a result, analysis accuracy is improved and analysis time is shortened.