Patents by Inventor Kouichi Mishio

Kouichi Mishio has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bipolar type diode
    Patent number: 5986327
    Abstract: A base region is formed at a shallow junction and an impurity region of higher impurity concentration is formed, by a separate step, as a buried layer at a predetermined distance from the surface of a semiconductor substrate. By so doing, a bipolar diode is implemented which does not involve an increase in a base resistance even if conduction is effected over a longer period of time.
    Type: Grant
    Filed: December 28, 1993
    Date of Patent: November 16, 1999
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kouichi Mishio, Satoshi Takahashi, Shigeru Komatsu