Abstract: A heat treatment unit U2 includes a heat plate 20 configured to place a wafer W thereon and heat the wafer W placed thereon; multiple gap members 22 formed along a front surface 20a of the heat plate 20 on which the wafer W is placed, and configured to support the wafer W to secure a clearance V between the heat plate 20 and the wafer W; a suction unit 70 configured to suck the wafer W toward the heat plate 20; and an elevating pin 51 configured to penetrate the heat plate 20 and configured to be moved up and down to move the wafer W placed on the heat plate 20 up and down. The front surface 20a of the heat plate 20 has a concave region 20d inclined downwards from an outer side toward an inner side thereof.

Abstract: A heat treatment unit U2 includes a heat plate 20 configured to place a wafer W thereon and heat the wafer W placed thereon; multiple gap members 22 formed along a front surface 20a of the heat plate 20 on which the wafer W is placed, and configured to support the wafer W to secure a clearance V between the heat plate 20 and the wafer W; a suction unit 70 configured to suck the wafer W toward the heat plate 20; and an elevating pin 51 configured to penetrate the heat plate 20 and configured to be moved up and down to move the wafer W placed on the heat plate 20 up and down. The front surface 20a of the heat plate 20 has a concave region 20d inclined downwards from an outer side toward an inner side thereof.

Abstract: A side surface unit of a heat treatment space S is formed by a shutter member 250 including an outer shutter 260 and an inner shutter 270. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member 250, that is, from a gap d1 located on the level with the wafer W placed on a heat plate 211 of a mounting table 210. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member 250, that is, from a gap d2 positioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.

Abstract: A substrate processing apparatus includes a rotation driving device configured to rotate a rotary table holding a substrate; an electric heater provided at the rotary table and configured to heat the substrate; a power receiving electrode provided at the rotary table and electrically connected to the electric heater; a power feeding electrode configured to be contacted with the power receiving electrode to supply a power to the electric heater via the power receiving electrode; an electrode moving device configured to connect and disconnect the power feeding electrode and the power receiving electrode relatively; a power feeder configured to supply the power to the power feeding electrode; a processing cup disposed to surround the rotary table; at least one processing liquid nozzle configured to supply a processing liquid onto the substrate; a processing liquid supply device configured to supply the processing liquid to the processing liquid nozzle; and a controller.

Abstract: A heat treatment unit U2 includes a heat plate 20 configured to place a wafer W thereon and heat the wafer W placed thereon; multiple gap members 22 formed along a front surface 20a of the heat plate 20 on which the wafer W is placed, and configured to support the wafer W to secure a clearance V between the heat plate 20 and the wafer W; a suction unit 70 configured to suck the wafer W toward the heat plate 20; and an elevating pin 51 configured to penetrate the heat plate 20 and configured to be moved up and down to move the wafer W placed on the heat plate 20 up and down. The front surface 20a of the heat plate 20 has a concave region 20d inclined downwards from an outer side toward an inner side thereof.

Abstract: A substrate processing method includes forming, by supplying a chemical liquid onto a central portion of a substrate while rotating a rotary table at a first speed, a liquid film of the chemical liquid having a first thickness; forming, by supplying the chemical liquid onto the central portion while rotating the rotary table at a second speed lower than the first speed after the forming of the liquid film having the first thickness, a liquid film of the chemical liquid having a second thickness larger than the first thickness; and heating, by heating the rotary table in a state that the rotary table is rotated at a third speed lower than the second speed or in a state that the rotating of the rotary table is stopped after the forming of the liquid film having the second thickness, the substrate and the liquid film of the chemical liquid.

Abstract: A substrate processing apparatus includes a rotation driving device configured to rotate a rotary table holding a substrate; a processing liquid nozzle configured to supply a processing liquid onto a top surface of the substrate; an electric heater provided at a top plate and configured to heat the substrate through the top plate; an electronic component configured to perform a power feed to the electric heater and transmission/reception of a control signal for the electric heater; and a periphery cover body connected to a peripheral portion of the top plate to be rotated along with the top plate. An accommodation space in which the electronic component is accommodated is formed under the top plate. The accommodation space is surrounded by a surrounding structure including the top plate and the periphery cover body. A gap between the peripheral portion of the top plate and the periphery cover body is sealed.

Abstract: A substrate processing apparatus includes a rotary table configured to hold and rotate a substrate; an electronic component provided at the rotary table and configured to be rotated along with the rotary table; a first electrode unit provided at the rotary table and configured to be rotated along with the rotary table, the first electrode unit comprising multiple first electrodes electrically connected to the electronic component via multiple first conductive lines; an electric device configured to perform a power supply to the electronic component and a transmission/reception of signals; a second electrode unit comprising multiple second electrodes electrically connected to the electric device via multiple second conductive lines and arranged at positions respectively corresponding to the multiple first electrodes to be brought into contact with the multiple first electrodes; and an electrode moving device configured to connect/disconnect the first electrode unit to/from the second electrode unit.

Abstract: A substrate processing method of performing liquid processing on a substrate in a substrate processing apparatus, which includes a substrate table configured to suction the substrate, a heater configured to heat the substrate table, and a processing liquid nozzle configured to supply a processing liquid to the substrate suctioned to the substrate table, includes: a suctioning process of suctioning the substrate by the substrate table when there is no temperature difference between the substrate and the substrate table or when a temperature difference between the substrate and the substrate is within a predetermined range; and after the suctioning process, a processing liquid supply process of supplying the processing liquid from the processing liquid nozzle to the substrate suctioned to the substrate table heated by the heater.

Abstract: A substrate processing apparatus includes a rotation driving mechanism configured to rotate a rotary table configured to hold a substrate; an electric heater provided in the rotary table to be rotated along with the rotary table and configured to heat the substrate; a power receiving electrode provided in the rotary table to be rotated along with the rotary table and electrically connected to the electric heater; a power feeding electrode configured to be contacted with the power receiving electrode and configured to supply a power to the electric heater via the power receiving electrode; an electrode moving mechanism; a power feeder configured to supply the power to the power feeding electrode; a processing cup surrounding the rotary table; at least one processing liquid nozzle configured to supply a processing liquid; a processing liquid supply mechanism configured to supply at least an electroless plating liquid; and a controller.

Abstract: A substrate processing method includes forming, by supplying a chemical liquid onto a central portion of a substrate while rotating a rotary table at a first speed, a liquid film of the chemical liquid having a first thickness; forming, by supplying the chemical liquid onto the central portion while rotating the rotary table at a second speed lower than the first speed after the forming of the liquid film having the first thickness, a liquid film of the chemical liquid having a second thickness larger than the first thickness; and heating, by heating the rotary table in a state that the rotary table is rotated at a third speed lower than the second speed or in a state that the rotating of the rotary table is stopped after the forming of the liquid film having the second thickness, the substrate and the liquid film of the chemical liquid.

Abstract: A substrate processing apparatus includes a rotary table comprising a base plate having a front surface where at least one suction hole is provided and an attraction plate having a front surface contacted with a non-processing surface of a substrate to attract the substrate, a rear surface contacted with the front surface of the base plate, and at least one through hole through which the front surface and the rear surface are connected; a rotation driving device configured to rotate the rotary table around a rotation axis; and a suction device configured to act a suction force on the suction hole, to contact the base plate with the attraction plate by acting the suction force between the base plate and the attraction plate, and to firmly contact the attraction plate with the substrate by acting the suction force between the attraction plate and the substrate through the through hole.

Abstract: A side surface unit of a heat treatment space S is formed by a shutter member 250 including an outer shutter 260 and an inner shutter 270. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member 250, that is, from a gap d1 located on the level with the wafer W placed on a heat plate 211 of a mounting table 210. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member 250, that is, from a gap d2 positioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.

Abstract: A side surface unit of a heat treatment space S is formed by a shutter member 250 including an outer shutter 260 and an inner shutter 270. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member 250, that is, from a gap d1 located on the level with the wafer W placed on a heat plate 211 of a mounting table 210. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member 250, that is, from a gap d2 positioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.

Abstract: A substrate processing apparatus includes a rotation driving device configured to rotate a rotary table holding a substrate; an electric heater provided at the rotary table and configured to heat the substrate; a power receiving electrode provided at the rotary table and electrically connected to the electric heater; a power feeding electrode configured to be contacted with the power receiving electrode to supply a power to the electric heater via the power receiving electrode; an electrode moving device configured to connect and disconnect the power feeding electrode and the power receiving electrode relatively; a power feeder configured to supply the power to the power feeding electrode; a processing cup disposed to surround the rotary table; at least one processing liquid nozzle configured to supply a processing liquid onto the substrate; a processing liquid supply device configured to supply the processing liquid to the processing liquid nozzle; and a controller.

Abstract: A substrate processing apparatus includes a rotary table comprising a base plate having a front surface where at least one suction hole is provided and an attraction plate having a front surface contacted with a non-processing surface of a substrate to attract the substrate, a rear surface contacted with the front surface of the base plate, and at least one through hole through which the front surface and the rear surface are connected; a rotation driving device configured to rotate the rotary table around a rotation axis; and a suction device configured to act a suction force on the suction hole, to contact the base plate with the attraction plate by acting the suction force between the base plate and the attraction plate, and to firmly contact the attraction plate with the substrate by acting the suction force between the attraction plate and the substrate through the through hole.

Abstract: A substrate processing apparatus includes a rotary table configured to hold and rotate a substrate; an electronic component provided at the rotary table and configured to be rotated along with the rotary table; a first electrode unit provided at the rotary table and configured to be rotated along with the rotary table, the first electrode unit comprising multiple first electrodes electrically connected to the electronic component via multiple first conductive lines; an electric device configured to perform a power supply to the electronic component and a transmission/reception of signals; a second electrode unit comprising multiple second electrodes electrically connected to the electric device via multiple second conductive lines and arranged at positions respectively corresponding to the multiple first electrodes to be brought into contact with the multiple first electrodes; and an electrode moving device configured to connect/disconnect the first electrode unit to/from the second electrode unit.

Abstract: A substrate processing apparatus includes a rotation driving device configured to rotate a rotary table holding a substrate; a processing liquid nozzle configured to supply a processing liquid onto a top surface of the substrate; an electric heater provided at a top plate and configured to heat the substrate through the top plate; an electronic component configured to perform a power feed to the electric heater and transmission/reception of a control signal for the electric heater; and a periphery cover body connected to a peripheral portion of the top plate to be rotated along with the top plate. An accommodation space in which the electronic component is accommodated is formed under the top plate. The accommodation space is surrounded by a surrounding structure including the top plate and the periphery cover body. A gap between the peripheral portion of the top plate and the periphery cover body is sealed.

Abstract: A side surface unit of a heat treatment space S is formed by a shutter member 250 including an outer shutter 260 and an inner shutter 270. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member 250, that is, from a gap d1 located on the level with the wafer W placed on a heat plate 211 of a mounting table 210. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member 250, that is, from a gap d2 positioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.

Abstract: A thermal catalytic layer is formed on the inner surface of a processing container and heated. Thus, when a sublimate sublimated from a coating film on a wafer W and received within the processing container reaches the vicinity of the thermal catalytic layer, the sublimate is decomposed and removed by the thermal activation of the thermal catalytic layer. In removing a sublimate attached to a light transmission window, a cleaning substrate formed with the thermal catalytic layer on the surface thereof is carried into the processing container and caused to approach the light transmission window. Thereafter, the cleaning substrate is heated so that the sublimate attached to the surface of the light transmission window is removed.