Patents by Inventor Kouichi Nakaune

Kouichi Nakaune has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LSI device etching method and apparatus thereof
    Patent number: 6919274
    Abstract: An apparatus for performing a plasma-etching of a LSI device including a Cu interconnection, a low-k film, and a diffusion prevention film has a treatment chamber, into which an etching gas is introduced, and a support table which is equipped with electrodes and on which said LSI device is placed. In this apparatus, the etching gasses are turned into plasma by supplying radio frequency power to electrodes provided within the treatment chamber, so that the LSI device is etched with ions of the plasma. In this apparatus, a sulfur-containing gas and a fluorine-containing gas are mixed to the etching gasses, so that the diffusion prevention film is selectively etched against the low-k film.
    Type: Grant
    Filed: February 19, 2004
    Date of Patent: July 19, 2005
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Hideyuki Kazumi, Tsuyoshi Yoshida, Eiji Ikegami, Kouichi Nakaune, Masamichi Sakaguchi, Yasuyuki Miyamoto, Akihiro Sano
  • LSI device etching method and apparatus thereof
    Publication number: 20050026431
    Abstract: An apparatus for performing a plasma-etching of a LSI device including a Cu interconnection, a low-k film, and a diffusion prevention film has a treatment chamber, into which an etching gas is introduced, and a support table which is equipped with electrodes and on which said LSI device is placed. In this apparatus, the etching gasses are turned into plasma by supplying radio frequency power to electrodes provided within the treatment chamber, so that the LSI device is etched with ions of the plasma. In this apparatus, a sulfur-containing gas and a fluorine-containing gas are mixed to the etching gasses, so that the diffusion prevention film is selectively etched against the low-k film.
    Type: Application
    Filed: February 19, 2004
    Publication date: February 3, 2005
    Inventors: Hideyuki Kazumi, Tsuyoshi Yoshida, Eiji Ikegami, Kouichi Nakaune, Masamichi Sakaguchi, Yasuyuki Miyamoto, Akihiro Sano