Abstract: An arc evaporation source and a vacuum deposition system capable of properly collecting an evaporated material emitted from a cathode in vacuum arc discharge are provided. An arc evaporation source (100) includes a first electrode and a second electrode (14A, 14B) disposed so as to face each other with a gap (G) therebetween. The first and second electrodes (14A, 14B) are configured such that at least one of the first and second electrodes (14A, 14B) is operable as a cathode, and the other one of the first and second electrodes (14A, 14B) is operable to collect an evaporated material emitted from the cathode, based on a vacuum arc discharge occurring between the cathode and an anode.

Abstract: A vacuum film deposition method comprises the steps of mounting a substrate on a substrate holder (6a) that is disposed in a vacuum chamber (1) and is provided with a passage (7f), (7g), and (7j) in which predetermined heat medium flows; maintaining an inside of the vacuum chamber substantially in vacuum state; evaporating evaporation materials from two or more evaporation sources in the inside of the vacuum chamber; and diffusing the evaporated evaporation materials in the inside of the vacuum chamber in a predetermined order; and depositing the diffused evaporation materials on a deposition surface of the substrate, thereby forming a multi-layered film made of the evaporation materials on the deposition surface of the substrate; wherein an antifreezing fluid is used as the predetermined heat medium flowing in the passage of the substrate holder.

Abstract: The present invention provides film formation systems and film formation methods. A high frequency (HF) electric power supply (11) applies a high frequency voltage to a cathode (5) which is provided, at its rear surface, with a permanent magnet (10), thereby to generate a reactive-mode plasma, and film formation by plasma polymerization is performed by the use of the generated reactive-mode plasma. The pressure of a plasma source gas in a vacuum chamber (1) is regulated, thereby to generate not a reactive-mode plasma but a metallic-mode plasma. The cathode (5) as a target is subjected to sputtering by the generated metallic-mode plasma, and film formation by magnetron sputtering is carried out.

Abstract: A vacuum chamber the inside of which can be maintained in a substantially vacuum condition is used; a wafer in which a semiconductor wiring film is to be formed is held by a wafer substrate holder disposed in the vacuum chamber; the material of the semiconductor wiring film is evaporated by an evaporation source disposed in the vacuum chamber; and a high frequency electric power for generating a plasma in the vacuum chamber, making use of the substrate holder as an electrode is supplied from a high frequency power source.

Abstract: In ion plating in which a substrate is held on a substrate holder placed in an evacuated vacuum chamber and plasma is generated in the vacuum chamber to be formed into a film, a bias voltage composed of a negative bias component having a predetermined negative voltage value for a predetermined output time and a pulse bias component corresponding to a pulse output having a constant positive value for a predetermined time and output with a cycle set in the rage of 1 kHz-1 GHz is supplied to the inside of the vacuum chamber through the substrate holder by a power supply unit.

Abstract: A plasma display panel (PDP), consisting of a front panel (10) equipped with display electrodes (8) and a rear panel (4) equipped with address electrodes (3), that displays an image by causing discharge in a small discharge space formed between the two panels; wherein there are provided two layers of protective films (5, 6), made of metallic oxide, covering the dielectric layer (7) installed on the front panel (10); the outer, upper layer (6) being formed into a layer of material with a specific surface area of 20 m2/g or more and a film thickness of 1 &mgr;m or less, exhibiting a high discharge characteristic; and the inner, lower layer (5) being formed into a layer of material with a specific surface area of 10 m2/g or less and a film thickness of 1 &mgr;m or more, exhibiting a low water-adsorption characteristic.

Abstract: There is provided a plasma display panel (PDP), consisting of a front panel (10) equipped with display electrodes (8) and a rear panel (4) equipped with address electrodes (3), that displays an image by causing discharge in a small discharge space formed between the two panels; wherein there are provided two layers of protective films (5, 6), made of metallic oxide, covering the dielectric layer (7) installed on the front panel (10); the outer, upper layer (6) being formed into a layer of material with a specific surface area of 20 m2/g or more and a film thickness of 1 &mgr;m or less, exhibiting a high discharge characteristic; and the inner, lower layer (5) being formed into a layer of material with a specific surface area of 10 m2/g or less and a film thickness of 1 &mgr;m or more, exhibiting a low water-adsorption characteristic.

Abstract: In a plasma display panel of AC type, consisting of a front panel 9 provided with display electrodes 7 and a rear panel 4 provided with address electrodes 3, that displays an image by causing discharge in the discharge gas space formed between the front panel 9 and rear panel 4, a protective film 5 made of metallic oxide covering a dielectric layer 6 placed on the front panel 9 is formed as follows. The protective film 5 is formed into a structure where columnar structures are densely packed, closely with each other, extending perpendicularly to the interface between the dielectric layer 6 and the protective film 5, and more than 400 columnar structures are formed per the substrate area of 1 &mgr;m2.

Abstract: A vacuum chamber the inside of which can be maintained in a substantially vacuum condition is used; a wafer in which a semiconductor wiring film is to be formed is held by a wafer substrate holder disposed in the vacuum chamber; the material of the semiconductor wiring film is evaporated by an evaporation source disposed in the vacuum chamber; and a high frequency electric power for generating a plasma in the vacuum chamber, making use of the substrate holder as an electrode is supplied from a high frequency power source.

Abstract: An arc evaporator comprises: an anode; an evaporation source electrode as a cathode; and a current control unit for supplying an AC square wave arcing current across the anode and the evaporation source electrode.

Abstract: There is provided a plasma display panel (PDP), consisting of a front panel (10) equipped with display electrodes (8) and a rear panel (4) equipped with address electrodes (3), that displays an image by causing discharge in a small discharge space formed between the two panels; wherein there are provided two layers of protective films (5, 6), made of metallic oxide, covering the dielectric layer (7) installed on the front panel (10); the outer, upper layer (6) being formed into a layer of material with a specific surface area of 20 m2/g or more and a film thickness of 1 &mgr;m or less, exhibiting a high discharge characteristic; and the inner, lower layer (5) being formed into a layer of material with a specific surface area of 10 m2/g or less and a film thickness of 1 &mgr;m or more, exhibiting a low water-adsorption characteristic.

Abstract: There is provided a plasma display panel (PDP), consisting of a front panel (10) equipped with display electrodes (8) and a rear panel (4) equipped with address electrodes (3), that displays an image by causing discharge in a small discharge space formed between the two panels; wherein there are provided two layers of protective films (5, 6), made of metallic oxide, covering the dielectric layer (7) installed on the front panel (10); the outer, upper layer (6) being formed into a layer of material with a specific surface area of 20 m2/g or more and a film thickness of 1 &mgr;m or less, exhibiting a high discharge characteristic; and the inner, lower layer (5) being formed into a layer of material with a specific surface area of 10 m2/g or less and a film thickness of 1 &mgr;m or more, exhibiting a low water-adsorption characteristic.

Abstract: Provided in a plasma display panel having a protective film for electrodes improved in secondary electron emission characteristics.

Abstract: An arc evaporator comprises: an anode; an evaporation source electrode as a cathode; and a current control unit for supplying an AC square wave arcing current across the anode and the evaporation source electrode.

Abstract: In a plasma display panel of AC type, consisting of a front panel 9 provided with display electrodes 7 and a rear panel 4 provided with address electrodes 3, that displays an image by causing discharge in the discharge gas space formed between the front panel 9 and rear panel 4, a protective film 5 made of metallic oxide covering a dielectric layer 6 placed on the front panel 9 is formed as follows. The protective film 5 is formed into a structure where columnar structures are densely packed, closely with each other, extending perpendicularly to the interface between the dielectric layer 6 and the protective film 5, and more than 400 columnar structures are formed per the substrate area of 1 &mgr;m2.

Abstract: In ion plating in which a substrate is held on a substrate holder placed in an evacuated vacuum chamber and plasma is generated in the vacuum chamber to be formed into a film, a bias voltage composed of a negative bias component having a predetermined negative voltage value for a predetermined output time and a pulse bias component corresponding to a pulse output having a constant positive value for a predetermined time and output with a cycle set in the rage of 1 kHz-1 GHz is supplied to the inside of the vacuum chamber through the substrate holder by a power supply unit.