Abstract: A method for patterning an insulative layer with high precision to accommodate the pitch reduction of wiring conductors and forming insulating layers that are superior in insulation performance, migration resistance, etc. is disclosed. According to the method, there are provided a first step of forming a pattern having openings on a surface by using a high resolution material, a second step of forming an insulating layer of a reliable second insulating material in spaces between the residual first resist material and a third step of removing the residual resist material. The pattern formation is preferably performed by using an ultraviolet-curable resin, to form a precision pattern. Since a highly reliable, thermosetting resin remains on the substrate in an actual product, superior properties of migration resistance and adhesiveness with the substrate can be obtained.