Patents by Inventor Kouichi SEKIDO

Kouichi SEKIDO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11873556
    Abstract: A raw material supply apparatus includes: a raw material supply path through which a raw material gas is supplied into a processing container; a valve provided in the raw material supply path; a pressure sensor configured to detect an internal pressure of the raw material supply path; a raw material exhaust path connected to the raw material supply path and through which the raw material gas in the raw material supply path is exhausted; an opening degree adjustment mechanism provided in the raw material exhaust path and configured to control the internal pressure of the raw material supply path based on an adjustment of an opening degree of the opening degree adjustment mechanism; and a controller configured to perform the adjustment of the opening degree of the opening degree adjustment mechanism based on a value detected by the pressure sensor.
    Type: Grant
    Filed: April 13, 2021
    Date of Patent: January 16, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Tomohisa Kimoto, Noriyuki Watanabe, Kensaku Narushima, Kouichi Sekido, Takuya Kawaguchi
  • Patent number: 11753719
    Abstract: A method of controlling flow rate in a gas supply device for supplying a mixed gas containing a raw material gas, which is generated by vaporizing a raw material in a raw material container, and a carrier gas, includes: supplying the mixed gas at a predetermined target flow rate; acquiring a flow rate of the mixed gas when supplying the mixed gas; specifying a stable range of the flow rate of the mixed gas acquired when acquiring the flow rate; calculating a representative value of flow rates of the mixed gas in the stable range specified when specifying the stable range; and correcting the target flow rate based on the representative value calculated when calculating the representative value and the target flow rate.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: September 12, 2023
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kennan Mo, Kouichi Sekido, Takanobu Hotta, Nagayasu Hiramatsu, Atsushi Matsumoto, Kensaku Narushima
  • Publication number: 20230129351
    Abstract: Gas supply amount calculation method includes: calculating flow rate of first substance gas by subtracting flow rate of second substance gas from flow rate of mixed gas of the first and second substance gas flowing through gas supply path connected to processing container configured to perform film formation by atomic layer deposition method; calculating first integrated flow rate of the first substance gas over time in remaining plurality of cycles after elapse of a predetermined number of cycles immediately after start of the film formation over a plurality of cycles; calculating average integrated flow rate per cycle by dividing the first integrated flow rate by the number of the remaining plurality of cycles; and calculating total supply amount of the first substance gas in the plurality of cycles by adding multiplication value obtained by multiplying the average integrated flow rate by the predetermined number and the first integrated flow rate.
    Type: Application
    Filed: March 16, 2021
    Publication date: April 27, 2023
    Inventor: Kouichi SEKIDO
  • Patent number: 11236425
    Abstract: A method of processing each of a plurality of substrates comprises: obtaining a first correction factor based on a first flow rate set value of a mass flow controller and a first measurement value of a mass flow meter; adjusting the first flow rate set value of the mass flow controller with the first correction factor so that the flow rate of the vaporized raw material becomes equal to a target value to process the substrate; obtaining a second correction factor based on a second flow rate set value of the mass flow controller and a second measurement value of the mass flow meter; and adjusting the second flow rate set value of the mass flow controller with the second correction factor so that the flow rate of the vaporized raw material becomes equal to the target value to process the substrate.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: February 1, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kennan Mo, Nuri Choi, Kouichi Sekido, Katsumasa Yamaguchi, Eiichi Komori
  • Publication number: 20210324513
    Abstract: A raw material supply apparatus includes: a raw material supply path through which a raw material gas is supplied into a processing container; a valve provided in the raw material supply path; a pressure sensor configured to detect an internal pressure of the raw material supply path; a raw material exhaust path connected to the raw material supply path and through which the raw material gas in the raw material supply path is exhausted; an opening degree adjustment mechanism provided in the raw material exhaust path and configured to control the internal pressure of the raw material supply path based on an adjustment of an opening degree of the opening degree adjustment mechanism; and a controller configured to perform the adjustment of the opening degree of the opening degree adjustment mechanism based on a value detected by the pressure sensor.
    Type: Application
    Filed: April 13, 2021
    Publication date: October 21, 2021
    Inventors: Tomohisa KIMOTO, Noriyuki WATANABE, Kensaku NARUSHIMA, Kouichi SEKIDO, Takuya KAWAGUCHI
  • Publication number: 20210010130
    Abstract: There is provided a substrate processing method in a substrate processing apparatus including a gas supplier that vaporizes a raw material in a raw material container and supplies a raw material gas together with a carrier gas, including: calibrating a relational expression between a flow rate of the carrier gas and a flow rate of the raw material gas; and processing a substrate in a processing container by controlling the flow rate of the carrier gas based on the relational expression and supplying the raw material gas into the processing container, wherein, in the calibrating the relational expression, the relational expression is derived by allowing the carrier gas to continuously flow.
    Type: Application
    Filed: June 29, 2020
    Publication date: January 14, 2021
    Inventors: Kensaku NARUSHIMA, Takanobu HOTTA, Atsushi MATSUMOTO, Takuya KAWAGUCHI, Kouichi SEKIDO
  • Patent number: 10870919
    Abstract: There is provided a gas supply method for temporarily storing a raw material gas generated by vaporizing a raw material accommodated in a raw material container inside a buffer tank together with a carrier gas and subsequently supplying the raw material gas into a processing container. The gas supply method includes: controlling a flow rate of a gas exhausted from the buffer tank and a flow rate of the raw material gas and the carrier gas filled in the buffer tank, so that a second internal pressure of the buffer tank becomes equal to a first internal pressure of the buffer tank when a process is performed by supplying the raw material gas into the processing container, before supplying the raw material gas into the processing container.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: December 22, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Katsumasa Yamaguchi, Kensaku Narushima, Hironori Yagi, Kouichi Sekido
  • Publication number: 20190284698
    Abstract: A method of controlling flow rate in a gas supply device for supplying a mixed gas containing a raw material gas, which is generated by vaporizing a raw material in a raw material container, and a carrier gas, includes: supplying the mixed gas at a predetermined target flow rate; acquiring a flow rate of the mixed gas when supplying the mixed gas; specifying a stable range of the flow rate of the mixed gas acquired when acquiring the flow rate; calculating a representative value of flow rates of the mixed gas in the stable range specified when specifying the stable range; and correcting the target flow rate based on the representative value calculated when calculating the representative value and the target flow rate.
    Type: Application
    Filed: March 13, 2019
    Publication date: September 19, 2019
    Inventors: Kennan MO, Kouichi SEKIDO, Takanobu HOTTA, Nagayasu HIRAMATSU, Atsushi MATSUMOTO, Kensaku NARUSHIMA
  • Publication number: 20190177849
    Abstract: There is provided a method of processing each of a plurality of substrates comprising: obtaining a first correction factor based on a first flow rate set value of a mass flow controller and a first measurement value of a mass flow meter; adjusting the first flow rate set value of the mass flow controller with the first correction factor so that the flow rate of the vaporized raw material becomes equal to a target value to process the substrate; obtaining a second correction factor based on a second flow rate set value of the mass flow controller and a second measurement value of the mass flow meter; and adjusting the second flow rate set value of the mass flow controller with the second correction factor so that the flow rate of the vaporized raw material becomes equal to the target value to process the substrate.
    Type: Application
    Filed: December 12, 2018
    Publication date: June 13, 2019
    Inventors: Kennan MO, Nuri CHOI, Kouichi SEKIDO, Katsumasa YAMAGUCHI, Eiichi KOMORI
  • Publication number: 20180251894
    Abstract: A gas supply device for vaporizing a raw material inside a raw material container and supplying a raw material gas into a processing container together with a carrier gas, which includes: a buffer tank provided between the raw material container and the processing container; an Evac line for exhausting interiors of the buffer tank and the raw material container; a memory part that stores a first internal pressure of the buffer tank when a process is performed by supplying the raw material gas into the processing container; and a control part configured to control a flow rate of a gas exhausted to the Evac line and a flow rate of the raw material gas and the carrier gas filled in the buffer tank, so that a second internal pressure of the buffer tank becomes equal to the first internal pressure before supplying the raw material gas into the processing container.
    Type: Application
    Filed: February 21, 2018
    Publication date: September 6, 2018
    Inventors: Katsumasa YAMAGUCHI, Kensaku NARUSHIMA, Hironori YAGI, Kouichi SEKIDO