Abstract: Two A-shaped brackets for clamping three linearly located injectors onto a cylinder head of an engine. Each bracket has one top branch and two foot branches. Two top branches of the two brackets cooperatively press down a center injector among the three, and two pairs of foot branches of the two brackets press down two side injectors, respectively. Each injector has a flange that is pressed down by the two top branches of the two brackets or the two foot branches of the associated bracket Each bracket has an opening at its approximate center so that a screw shaft extending from the cylinder head can penetrate. Each bracket is secured on a cylinder head by tightening a nut over the screw shaft.

Abstract: In a glass substrate for use in a magnetic recording medium, the glass substrate has a pair of principal surfaces opposite to each other and a peripheral side area contiguous to the principal surfaces. The peripheral side area has a side end wall and intermediate regions between the side end wall and the principal surfaces. In this case, at least one of the intermediate regions and the side end wall is formed by a mirror finished surface which has a surface roughness Ra not greater than 1 &mgr;m or a surface roughness Rmax not greater than 4 &mgr;m. With this structure, no particles are generated from the peripheral side area because the side end surface of the glass substrate is mirror finished. Consequently, reproduction is performed without reproduction errors because of no generation of a thermal asperity and a head crash can be sufficiently avoided because of no projections which might result from the particles.

Abstract: A method of evaluating a program in which a second program is inserted into an instruction processing of a first program, includes the steps of: latching an address value of a stack pointer when executing an instruction for calling the second program; comparing the address value of the stack pointer held with an address value of a stack pointer during a subsequent instruction execution; and when they are coincident with each other, judging the termination of execution of the second program.

Abstract: A lactose-containing food compositions for infants for improving the stool color of infants closer to that of breast-fed infants, which contains the lactose-containing foods for infants of which the only protein source is substantially cow's milk protein and/or a processed product of cow's milk protein modified to be administered to infants, and raffinose added into the foods for infants at a ratio of at least 0.05% (by weight) in a ready-to-use state. This food composition provides foods for infants more suitable for infant growth (infant formula, protein hydrolyzed formula, formula for low-birth-weight infants, follow-up formula, etc.) without causing a green stool which is observed when administering a conventional food for sucking infants, of which the only protein source is substantially cow's milk protein and/or a processed product of cow's milk protein.

Abstract: In a glass substrate for use in a magnetic recording medium, the glass substrate has a pair of principal surfaces opposite to each other and a peripheral side area contiguous to the principal surfaces. The peripheral side area has a side end wall and intermediate regions between the side end wall and the principal surfaces. In this case, at least one of the intermediate regions and the side end wall is formed by a mirror finished surface which has a surface roughness Ra not greater than 1 .mu.m or a surface roughness Rmax not greater than 4 .mu.m. With this structure, no particles are generated from the peripheral side area because the side end surface of the glass substrate is mirror finished. Consequently, reproduction is performed without reproduction errors because of no generation of a thermal asperity and a head crash can be sufficiently avoided because of no projections which might result from the particles.

Abstract: A memory dialing system includes a first memory in which registered names and registered identification numbers respectively relevant to a plurality of telephone numbers are registered so that the plurality of telephone numbers may be respectively retrieved by specifying the corresponding respective names. A sort table is used for storing the identification numbers in a predetermined order with respect to the first letters in the spellings of the names. A history telephone-number table is provided for storing the used telephone numbers in a order in which the used telephone numbers have been used. A history identification-number table is also used for storing used identification numbers among the registered identification numbers respectively relevant to the used telephone numbers in an order in which the used telephone numbers have been used. A frequency table is used for storing the used identification numbers in an order with respect to the frequencies which the used telephone numbers have been used.

Abstract: A wire bonding method includes the steps of a lowering a capillary tool supplying a wire, restraining the lowering of the capillary tool, and wire bonding the wire to a bonding face. The inertial force of the capillary tool is reduced to almost zero by restraining the lowering of the capillary tool. As a result, wire bonding is performed under proper bonding force since no bonding force is applied to a ball on the tip of wire from the inertial force of the capillary tool. The bonding force is provided using torque control from an electric motor which lowers the capillary tool.

Abstract: Proposed is an alkali-soluble, positive-working photo-sensitive resin composition which can be used as a material for forming a finely patterned resist layer on the surface of a metallic substrate such as tantalum to exhibit excellent adhesion of the patterned resist layer to the substrate surface. The composition comprises, in addition to a novolac resin as a film-forming agent and a naphthoquinone diazide group-containing compound as a photosensitizer, an aromatic compound having two benzene rings and at least five phenolic hydroxy groups in a molecule such as pentahydroxy and hexahydroxy benzophenone compounds as an adhesion improver.

Abstract: A measuring device 40 measures an ultrasonic waveform provided to an inspection tool 1. A target energy memory section 45 memorizes a target energy consumed by the inspection tool 1 when the inspection tool 1 is depressed on the soldered portion of an electronic component which is properly soldered on a substrate. A reference waveform memory section 44 memorizes a reference waveform corresponding to an ultrasonic waveform measured in a no load condition of the inspection tool 1. A CPU 43 makes a judgement on whether the soldering condition of the soldered portion of the electronic component is acceptable or not based on a difference between the reference waveform and the waveform measured by the measuring device 40.

Abstract: A positive-working photoresist composition comprising a cresol novolac resin as the film-forming agent and a quinonediazido group-containing compound as the photosensitizing agent is admixed with a limited amount of a hydroxyalkyl-substituted pyridine compound so that great improvements can be obtained in the adhesive bonding of the resist layer to the substrate surface and in the stability of the composition by storage still without the problem due to the sublimed material from the resist layer during the patterning process.

Abstract: Proposed is an alkali-soluble, positive-working photosensitive resin composition which can be used as a material for forming a finely patterned resist layer on the surface of a metallic substrate such as tantalum to exhibit excellent adhesion of the patterned resist layer to the substrate surface. The composition comprises, in addition to a novolac resin as a film-forming agent and a naphthoquinone diazide group-containing compound as a photosensitizer, an aromatic compound having two benzene rings and at least five phenolic hydroxy groups in a molecule such as pentahydroxy and hexahydroxy benzophenone compounds as an adhesion improver.

Abstract: Proposed is a positive-working photosensitive resin composition suitable as a photoresist in the photolithographic patterning work for the manufacture of, for example, semiconductor devices having excellent storage stability and capable of giving a patterned resist layer having excellent contrast of the images, orthogonality of the cross sectional profile of line patterns and heat resistance along with a satisfactorily high photosensitivity and large focusing latitude. The composition comprises, in admixture with an alkali-soluble novolac resin as a film-forming agent, a photosensitizing agent which is an esterification product of a specific tris(hydroxyphenyl) methane compound of which two of the hydroxyphenyl groups each have a cyclohexyl group bonded thereto at a specified position with at least one naphthoquinone-1,2-diazide sulfonyl group as the esterifying group.

Abstract: This invention relates to a method and apparatus for forming a glass container by a press-and-blow system wherein the glass container is provided with a reinforced inner surface. According to the inventive method, fuel gas or a gaseous boron or silicon compound is burnt or otherwise reacted inside a parison after the parison molded in the blank mold is transferred to the finish mold. The burning or other reaction of the fuel gas or gaseous boron or silicon compounds can be carried out just prior to the final blow-molding step in which the parison is blow molded into its final shape, simultaneous with the final blow-molding step, or just after the final blow-molding step. The apparatus of the present invention includes a finish mold provided with a blow head which includes a low selector valve. The low selector valve is open during combustion or other reaction within the parison and is automatically closed during the final blow-molding step by the pressure of the compressed air used in the final blow-molding.

Abstract: A method of manufacturing a semiconductor having a trench region is disclosed. After an etching process for forming an trench region in a substrate, the corners of the trench region are covered with a polycrystalline layer. The structure is subjected to an oxidation treatment. Since the polycrystalline layer covers the corners roundly, the oxidation results in semiconductor islands having rounded corners.

Abstract: A method of manufacturing a semiconductor device by forming an N type collector layer in an N type semiconductor wafer, a P type base layer which is in contact with the N type collector layer at a PN junction that extends to the surface and which contains an N type impurity material of which the energy of combination with vacancies is great and boron which is a P type impurity material, and an N type emitter layer which is so formed as to be surrounded by this P type base layer and forms a transistor together with the N type collector layer and the P type base layer and which contains the N type impurity materials phosphorous and arsenic. Arsenic or antimony or the like, which are N type impurity material of which the energy of combination with vacancies is great are diffused in the P type base layer.

Abstract: A semiconductor device comprising an N type collector layer formed in an N type semiconductor wafer, a P type base layer which is in contact with the N type collector layer at a PN junction that extends to the surface and which contains an N type impurity material of which the energy of combination with vacancies is great and boron which is a P type impurity material, and an N type emitter layer which is so formed as to be surrounded by this P type base layer and forms a transistor together with the N type collector layer and the P type base layer and which contains the N type impurity materials phosphorus and arsenic. Arsenic or antimony or the like, which are N type impurity materials of which the energy of combination with vacancies is great are diffused in the P type base layer.

Abstract: An engine intake system includes a combustion chamber, a first intake port opening to the combustion chamber, and a second intake port opening to the combustion chamber. A shut-off valve is provided for blocking intake gas flow to the combustion chamber through the second intake port in a first engine operating region wherein engine load is relatively small, and allowing the intake gas to flow to the combustion chamber through the second intake port in a second engine operating region wherein the engine load is relatively large. A first valve actuating mechanism is provided for opening the first intake valve at a first timing, and a second valve actuating mechanism is provided for opening the second intake valve at a second timing.

Abstract: A semiconductor device comprising an N type collector layer formed in an N type semiconductor wafer, a P type base layer which is in contact with the N type collector layer at a PN junction that extends to the surface and which contains an N type impurity material of which the energy of combination with vacancies is great and boron is a P type impurity material, and an N type emitter layer which is so formed as to be surrounded by this P type base layer and forms a transistor together with the N type collector layer and the P type base layer and which contains the N type impurity materials phosphorus and arsenic. Arsenic or antimony or the like, which are N type impurity materials of which the energy of combination with vacancies is great are diffused in the P type base layer.

Abstract: A semiconductor device comprising an N type collector layer formed in an N type semiconductor wafer, a P type base layer which is in contact with the N type collector layer at a PN junction that extends to the surface and which contains an N type impurity material of which the energy of combination with vacancies is great and boron which is a P type impurity material, and an N type emitter layer which is so formed as to be surrounded by this P type base layer and forms a transistor together with the N type collector layer and the P type base layer and which contains the N type impurity materials phosphorus and arsenic. Arsenic or antimony or the like, which are N type impurity materials of which the energy of combination with vacancies is great are diffused in the P type base layer.