Patents by Inventor Kouichi Tanaka

Kouichi Tanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8772132
    Abstract: A method of manufacturing a laminated wafer is provided by forming a silicon film layer on a surface of an insulating substrate comprising the steps in the following order of: applying a surface activation treatment to both a surface of a silicon wafer or a silicon wafer to which an oxide film is layered and a surface of the insulating substrate followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer at a temperature of 200° C. to 350° C., and thinning the silicon wafer by a combination of grinding, etching and polishing to form a silicon film layer.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: July 8, 2014
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Shoji Akiyama, Yoshihiro Kubota, Atsuo Ito, Makoto Kawai, Kouichi Tanaka, Yuji Tobisaka, Yoshihiro Nojima
  • Publication number: 20130288453
    Abstract: A method of manufacturing a laminated wafer is provided by forming a silicon film layer on a surface of an insulating substrate comprising the steps in the following order of: applying a surface activation treatment to both a surface of a silicon wafer or a silicon wafer to which an oxide film is layered and a surface of the insulating substrate followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer at a temperature of 200° C. to 350° C., and thinning the silicon wafer by a combination of grinding, etching and polishing to form a silicon film layer.
    Type: Application
    Filed: June 28, 2013
    Publication date: October 31, 2013
    Inventors: Shoji Akiyama, Yoshihiro Kubota, Atsuo Ito, Makoto Kawai, Kouichi Tanaka, Yuji Tobisaka, Yoshihiro Nojima
  • Patent number: 8557394
    Abstract: A laminate for a laminated glass which is used as a head-up display (HUD) and is not deteriorated even if exposed to light, and with which a laminated glass having excellent impact resistance can be prepared, wherein an interlayer film for a laminated glass and a retardation element sandwiched between adhesive layers are laminated, the interlayer film for a laminated glass contains a thermoplastic resin and an ultraviolet absorber, the interlayer film for a laminated glass contains, as the ultraviolet absorber, a benzotriazole compound or a benzophenone compound, and at least one compound selected from the group consisting of a malonic ester compound, an oxanilide compound and a triazine compound.
    Type: Grant
    Filed: January 2, 2013
    Date of Patent: October 15, 2013
    Assignees: Sekisui Chemical Co., Ltd., Nippon Kayaku Kabushiki Kaisha, Polatechno Co., Ltd.
    Inventors: Juichi Fukatani, Izumi Omoto, Seiko Ichikawa, Kouichi Tanaka, Mayu Kameda
  • Patent number: 8551862
    Abstract: To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated wafer 7 by forming a silicon film layer on a surface 4 of an insulating substrate 3 comprising the steps in the following order of: applying a surface activation treatment to both a surface 2 of a silicon wafer 1 or a silicon wafer 1 to which an oxide film is layered and a surface 4 of the insulating substrate 3 followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer 5 at a temperature of 200° C. to 350° C., and thinning the silicon wafer 1 by a combination of grinding, etching and polishing to form a silicon film layer.
    Type: Grant
    Filed: January 11, 2010
    Date of Patent: October 8, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Shoji Akiyama, Yoshihiro Kubota, Atsuo Ito, Makoto Kawai, Kouichi Tanaka, Yuji Tobisaka, Yoshihiro Nojima
  • Patent number: 8420503
    Abstract: A method for easily manufacturing a transparent SOI substrate having: a main surface with a silicon film formed thereon; and a rough main surface located on a side opposite to a side where the silicon film is formed. A method for manufacturing transparent SOI substrate, having a silicon film formed on a first main surface of the transparent insulating substrate, while a second main surface of the transparent insulating substrate, an opposite to the first main surface, is roughened. The method includes at least the steps of: roughening the first main surface with an RMS surface roughness lower than 0.7 nm and the second main surface with an RMS surface roughness higher than the surface roughness of the first main surface to prepare the transparent insulating substrate; and forming the silicon film on the first main surface of the transparent insulating substrate.
    Type: Grant
    Filed: April 1, 2009
    Date of Patent: April 16, 2013
    Assignee: Shin—Etsu Chemical Co., Ltd.
    Inventors: Shoji Akiyama, Makoto Kawai, Atsuo Ito, Yoshihiro Kubota, Kouichi Tanaka, Yuji Tobisaka, Hiroshi Tamura
  • Patent number: 8367216
    Abstract: A laminate for a laminated glass which is used as a head-up displays (HUD) and is not deteriorated even if exposed to light, and with which a laminated glass having excellent impact resistance can be prepared, wherein an interlayer film for a laminated glass and a retardation element sandwiched between adhesive layers are laminated, the interlayer film for a laminated glass contains a thermoplastic resin and an ultraviolet absorber, the interlayer film for a laminated glass contains, as the ultraviolet absorber, a benzotriazole compound or a benzophenone compound, and at least one compound selected from the group consisting of a malonic ester compound, an oxanilide compound and a triazine compound.
    Type: Grant
    Filed: December 22, 2009
    Date of Patent: February 5, 2013
    Assignees: Sekisui Chemical Co., Ltd., Nippon Kayaku Kabushiki Kaisha, Polatechno Co., Ltd.
    Inventors: Juichi Fukatani, Izumi Omoto, Seiko Ichikawa, Kouichi Tanaka, Mayu Kameda
  • Patent number: 8357586
    Abstract: Provided is a method for manufacturing an SOI wafer, which is capable of: efficiently removing an ion-implanted defect layer existing in an ion implanted layer in the vicinity of a peeled surface peeled by an ion implantation peeling method; ensuring the in-plane uniformity of a substrate; and also achieving cost reduction and higher throughput. The method for manufacturing an SOI wafer includes at least the steps of: bonding a silicon wafer with or without an oxide film onto a handle wafer to prepare a bonded substrate, wherein the silicon wafer has an ion implanted layer formed by implanting hydrogen ions and/or rare gas ions into the silicon wafer; peeling the silicon wafer along the ion implanted layer, thereby transferring the silicon wafer onto the handle wafer to produce a post-peeling SOI wafer; immersing the post-peeling SOI wafer in an aqueous ammonia-hydrogen peroxide solution; and performing a heat treatment at a temperature of 900° C.
    Type: Grant
    Filed: March 23, 2009
    Date of Patent: January 22, 2013
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Shoji Akiyama, Yoshihiro Kubota, Atsuo Ito, Kouichi Tanaka, Makoto Kawai, Yuji Tobisaka, Hiroshi Tamura
  • Publication number: 20130002661
    Abstract: Designated positions in a left-eye image and in a right-eye image are detected. The dominant eye is input and, if there is a position designation made by the observer, the coordinate position of the designated position is calculated in each of the left-eye and right-eye images. A template image is detected from the dominant-eye image and an image identical with the detected template image is detected from the non-dominant-eye image. Positions in respective ones of the template image and matching image become the designated positions. A distance differential between the template image detected from the dominant-eye image and the image detected from the non-dominant-eye image is parallax. The parallax of the designated positions is adjusted.
    Type: Application
    Filed: October 13, 2010
    Publication date: January 3, 2013
    Inventors: Kouichi Tanaka, Tetsu Wada, Hisashi Endo
  • Patent number: 8314006
    Abstract: Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m3 or less; and a splitting the first substrate at the ion-implanted region so as to reduce thickness of the first substrate, thereby manufacturing a bonded wafer with a thin film on the second substrate.
    Type: Grant
    Filed: April 10, 2009
    Date of Patent: November 20, 2012
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Yuji Tobisaka, Yoshihiro Kubota, Atsuo Ito, Kouichi Tanaka, Makoto Kawai, Shoji Akiyama, Hiroshi Tamura
  • Publication number: 20120118354
    Abstract: A single crystal silicon solar cell including a stack having at least a light-reflecting film, a single crystal silicon layer, a transparent adhesive layer, and a transparent insulator substrate; a plurality of areas of a first conductivity type and a plurality of areas of a second conductivity type formed in a surface of the silicon layer near the light-reflecting film; a plurality of pn junctions formed in a plane direction of the silicon layer; a plurality of first individual electrodes, each being formed on each one of the plurality of areas of the first conductivity type, and a plurality of second individual electrodes, each being formed on each one of the plurality of areas of the second conductivity type; and a first collector electrode for connecting the plurality of first individual electrodes and a second collector electrode for connecting the plurality of second individual electrodes.
    Type: Application
    Filed: December 23, 2011
    Publication date: May 17, 2012
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Atsuo ITO, Shoji AKIYAMA, Makoto KAWAI, Kouichi TANAKA, Yuuji TOBISAKA, Yoshihiro KUBOTA
  • Patent number: 8138064
    Abstract: A method for producing a silicon film-transferred insulator wafer is disclosed. The method includes a surface activation step of performing a surface activation treatment on at least one of a surface of an insulator wafer and a hydrogen ion-implanted surface of a single crystal silicon wafer into which a hydrogen ion has been implanted to form a hydrogen ion-implanted layer; a bonding step that bonds the hydrogen ion-implanted surface to the surface of the insulator wafer to obtain bonded wafers; a first heating step that heats the bonded wafers; a grinding and/or etching step of grinding and/or etching a surface of a single crystal silicon wafer side of the bonded wafers; a second heating step that heats the bonded wafers; and a detachment step to detach the hydrogen ion-implanted layer by applying a mechanical impact to the hydrogen ion-implanted layer of the bonded wafers thus heated at the second temperature.
    Type: Grant
    Filed: October 29, 2009
    Date of Patent: March 20, 2012
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Shoji Akiyama, Yoshihiro Kubota, Atsuo Ito, Makoto Kawai, Kouichi Tanaka, Yuji Tobisaka, Yoshihiro Nojima
  • Publication number: 20120065426
    Abstract: The present invention aims to provide a practical process for preparing amine compounds through a generalized highly-diastereoselective reductive amination reaction.
    Type: Application
    Filed: September 14, 2011
    Publication date: March 15, 2012
    Applicant: Kanto Kagaku Kabushiki Kaisha
    Inventors: Masahito Watanabe, Kouichi Tanaka, Takashi Miki, Kunihiko Murata
  • Patent number: 8106290
    Abstract: A method for manufacturing a single crystal silicon solar cell includes implanting either hydrogen ions or rare-gas ions into a single crystal silicon substrate; bringing the single crystal silicon substrate in close contact with a transparent insulator substrate via a transparent adhesive, with the ion-implanted surface being a bonding surface; curing the transparent adhesive; mechanically delaminating the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion areas of a second conductivity type in the delaminated surface side of the single crystal silicon layer, and causing a plurality of areas of a first conductivity type and the plurality of areas of the second conductivity type to be present in the delaminated surface of the single crystal silicon layer; forming each of a plurality of individual electrodes on each one of the plurality of areas of the first conductivity type and on each one of the plurality of areas of the second conductivity type; formin
    Type: Grant
    Filed: March 5, 2008
    Date of Patent: January 31, 2012
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Atsuo Ito, Shoji Akiyama, Makoto Kawai, Kouichi Tanaka, Yuuji Tobisaka, Yoshihiro Kubota
  • Publication number: 20120021230
    Abstract: The present invention aims to provide a laminate for a laminated glass which is used as a head-up display (HUD) and is not deteriorated even if exposed to light, and with which a laminated glass having excellent impact resistance can be prepared. The present invention pertains to a laminate for a laminated glass, wherein an interlayer film for a laminated glass and a retardation element sandwiched between adhesive layers are laminated, the interlayer film for a laminated glass contains a thermoplastic resin and an ultraviolet absorber, the interlayer film for a laminated glass contains, as the ultraviolet absorber, a benzotriazole compound or a benzophenone compound, and at least one compound selected from the group consisting of a malonic ester compound, an oxanilide compound and a triazine compound, the sum of the contents of the malonic ester compound, the oxanilide compound and the triazine compound is 0.
    Type: Application
    Filed: December 22, 2009
    Publication date: January 26, 2012
    Inventors: Juichi Fukatani, Izumi Omoto, Seiko Ichikawa, Kouichi Tanaka, Mayu Kameda
  • Publication number: 20120003402
    Abstract: The present invention relates to a retardation film having biaxial characteristics or an achromatic property, which is obtained by uniaxially stretching of a film composed of cellulose derivatives in which a hydroxyl group of cellulose is substituted by an acyl group having 5 to 20 carbon atoms, preferably 7 to 20 carbon atoms, more preferably 8 to 20 carbon atoms or cross-linked compounds of cellulose derivatives, said retardation film is a superior retardation film which has negative birefringence and excellent optical characteristics and also can be easy to obtain by uniaxially stretching, and in addition, the heat resistance, tearing strength and the like which are weaknesses of cellulose ester are improved.
    Type: Application
    Filed: August 29, 2011
    Publication date: January 5, 2012
    Applicants: POLATECHNO CO., LTD., NIPPON KAYAKU KABUSHIKI KAISHA
    Inventors: Yoshitaka Ohashi, Kouichi Tanaka, Hideyoshi Fujisawa
  • Patent number: 8088670
    Abstract: When manufacturing a bonded substrate using an insulator substrate as a handle wafer, there is provided a method for manufacturing a bonded substrate which can be readily removed after carried and after mounted by roughening a back surface of the bonded substrate (corresponding to a back surface of the insulator substrate) and additionally whose front surface can be easily identified like a process of a silicon semiconductor wafer in case of the bonded substrate using a transparent insulator substrate as a handle wafer. There is provided a method for manufacturing a bonded substrate in which an insulator substrate is used as a handle wafer and a donor wafer is bonded to a front surface of the insulator substrate, the method comprises at least that a sandblast treatment is performed with respect to a back surface of the insulator substrate.
    Type: Grant
    Filed: April 14, 2008
    Date of Patent: January 3, 2012
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Shoji Akiyama, Yoshihiro Kubota, Atsuo Ito, Kouichi Tanaka, Makoto Kawai, Yuuji Tobisaka
  • Publication number: 20110291312
    Abstract: In an extrusion die in which a mandrel ring is outwardly arranged around a spindle, the present invention aims to enhance the fixing stability of the mandrel ring and enables easy maintenance. The extrusion die includes a mandrel (30) for forming an inner surface of an extruded material. The mandrel includes a spindle (32) and a mandrel ring (35) outwardly arranged around the spindle (32). The mandrel ring (35) is made of a material having a coefficient of thermal expansion smaller than that of a material of the spindle (32).
    Type: Application
    Filed: December 28, 2009
    Publication date: December 1, 2011
    Applicant: SHOWA DENKO K.K.
    Inventors: Hidekazu Sakihama, Kouichi Tanaka
  • Publication number: 20110293856
    Abstract: The present invention aims at providing a retardation element which has excellent heat resistance, is small in the changes in the retardation value in an atmosphere of high temperatures, and is capable of maintaining stable optical performance. The present invention pertains to a retardation element containing a liquid crystalline compound, and at least one compound selected from the group consisting of a compound represented by the following formula (1), a compound represented by the following formula (2) and a compound represented by the following formula (3). In the formula (1), n represents an integer of 3 to 10 and R2 represents a —CH2—CH2— group, a —CH2—CH(CH3)— group or a —CH2—CH2—CH2— group. In the formula (2), R3 represents a —(CH2)p— group or a phenylene group and p represents an integer of 4 to 8. In the formula (3), R4 represents a substituted phenylene group.
    Type: Application
    Filed: December 8, 2009
    Publication date: December 1, 2011
    Inventors: Juichi Fukatani, Izumi Omoto, Seiko Ichikawa, Kouichi Tanaka, Mayu Kameda
  • Publication number: 20110293857
    Abstract: An object of the present invention is to provide a laminate for a laminated glass that exhibits an excellent heat resistance, exhibits little variation in its retardation value in high-temperature atmospheres, and can maintain stable optical properties. The present invention is a laminate for a laminated glass, comprising an interlayer film for a laminated glass laminated with a retardation element interposed between an adhesive layer A and an adhesive layer B, wherein the retardation element contains a liquid-crystal compound and at least one compound selected from the group consisting of a compound represented by the following formula (1), a compound represented by the following formula (2), and a compound represented by the following formula (3). In formula (1), n represents an integer from 3 to 10 and R2 represents a —CH2—CH2— group, a —CH2—CH(CH3)— group, or a —CH2—CH2—CH2— group. In formula (2), R3 represents a —(CH2)p— group or a phenylene group and p represents an integer from 4 to 8.
    Type: Application
    Filed: December 22, 2009
    Publication date: December 1, 2011
    Inventors: Juichi Fukatani, Izumi Omoto, Seiko Ichikawa, Kouichi Tanaka, Mayu Kameda
  • Publication number: 20110266841
    Abstract: There is provided a chair comprising: a backrest with a waist support projecting part; a horizontal forward seat; a backward seat pivotally supported so as to be able to swing downward relative to the forward seat; a leg support pivotally supported at a front end of the forward seat; links for changing a positional relation between the rear end of the backward seat and the lower end of the backrest so that a distance from the waist support projecting part to the backward seat is reduced from a standing posture to a tilted posture as the backrest is tilted backward; and a connection link for connecting the lower end of the backrest and a part of the leg support lower than the upper end of the leg support so as to cause the leg support to swing forward as the backrest is tilted backward.
    Type: Application
    Filed: March 11, 2009
    Publication date: November 3, 2011
    Inventors: Kouichi Tanaka, Hiroki Denmyouji, Kiyomi Matsuo