Patents by Inventor Kouichirou Yamada

Kouichirou Yamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Screw driving device
    Patent number: 5974918
    Abstract: A screw driving device includes a rotatable driver bit for driving a screw into a workpiece. A motor rotates the driver bit. A rotatable sprocket in engagement with a screw carrying belt feeds the screw carrying belt, and thereby feeds a screw on the screw carrying belt to a drivable place axially aligning with and being in front of the driver bit. A slide member supports the screw carrying belt. The slide member has a hole through which the screw is driven into the workpiece by the driver bit. When the screw is in the drivable place, a distance between the screw and an edge of the hole in a predetermined direction is greater than a distance between the screw and an edge of the hole in a direction different from the predetermined direction.
    Type: Grant
    Filed: April 10, 1997
    Date of Patent: November 2, 1999
    Assignee: Hitachi Koki Co., Ltd.
    Inventors: Atsushi Nakagawa, Chikai Yoshimizu, Kouichirou Yamada
  • Method of manufacturing a semiconductor integrated circuit device
    Patent number: 5512497
    Abstract: Disclosed is a bipolar-CMOS LSI manufactured by a simplified process and realizing a higher density of integration as well as a higher operating speed, in which a base lead-out electrode of a bipolar transistor and respective gate electrodes of a p-channel MISFET and an n-channel MISFET of CMOS transistors are made of an identical conductor film, and the conductor film of the gate electrode of the p-channel MISFET is of p-type, while that of the gate electrode of the n-channel MISFET is of n-type.
    Type: Grant
    Filed: July 8, 1994
    Date of Patent: April 30, 1996
    Assignee: Hitachi, Ltd.
    Inventors: Takahide Ikeda, Kouichirou Yamada, Osamu Saito, Masanori Odaka, Nobuo Tamba, Katsumi Ogiue, Atsushi Hiraishi, Atsuo Watanabe, Mitsuru Hirao, Akira Fukami, Masayuki Ohayashi, Tadashi Kuramoto
  • Method of manufacturing semiconductor integrated circuit device
    Patent number: 5354699
    Abstract: Disclosed is a bipolar-CMOS LSI manufactured by a simplified process and realizing a higher density of integration as well as a higher operating speed, in which a base lead-out electrode of a bipolar transistor and respective gate electrodes of a p-channel MISFET and an n-channel MISFET of CMOS transistors are made of an identical conductor film, and the conductor film of the gate electrode of the p-channel MISFET is of p-type, while that of the gate electrode of the n-channel MISFET is of n-type.
    Type: Grant
    Filed: October 22, 1992
    Date of Patent: October 11, 1994
    Assignee: Hitachi, Ltd.
    Inventors: Takahide Ikeda, Kouichirou Yamada, Osamu Saito, Masanori Odaka, Nobuo Tamba, Katsumi Ogiue, Atsushi Hiraishi, Atsuo Watanabe, Mitsuru Hirao, Akira Fukami, Masayuki Ohayashi, Tadashi Kuramoto
  • Semiconductor integrated circuit device
    Patent number: 5057894
    Abstract: Disclosed is a bipolar-CMOS LSI manufactured by a simplified process and realizing a higher density of integration as well as a higher operating speed, in which a base lead-out electrode of a bipolar transistor and respective gate electrodes of a p-channel MISFET and an n-channel MISFET of CMOS transistors are made of an identical conductor film, and the conductor film of the gate electrode of the p-channel MISFET is of p-type, while that of the gate electrode of the n-channel MISFET is of n-type.
    Type: Grant
    Filed: May 23, 1990
    Date of Patent: October 15, 1991
    Assignee: Hitachi, Ltd.
    Inventors: Takahide Ikeda, Kouichirou Yamada, Osamu Saito, Masanori Odaka, Nobuo Tamba, Katsumi Ogiue, Atsushi Hiraishi, Atsuo Watanabe, Mitsuru Hirao, Akira Fukami, Masayuki Ohayashi, Tadashi Kuramoto