Patents by Inventor Kouitirou Tsutahara

Kouitirou Tsutahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of uniform CVD
    Patent number: 6022811
    Abstract: A CVD method including the steps of: setting a semiconductor wafer on a heating stage within a CVD reaction chamber; and emitting CVD reaction gas towards at least the central major region of the wafer from a first gas blowing region of a gas head provided opposing the wafer and having a plurality of gas blowing regions separated from each other, and simultaneously emitting inert gas towards the peripheral region of the wafer from a second gas blowing region of the gas head, while maintaining the temperature of the wafer at a predetermined temperature, and while maintaining the pressure of the CVD reaction chamber within a range from 100 Torr to atmospheric pressure; whereby a CVD film of high quality can be formed in uniform thickness on the wafer, and the consumed amount of reaction gas and the amount of undesirable precipitated particles can be reduced.
    Type: Grant
    Filed: June 18, 1997
    Date of Patent: February 8, 2000
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Akimasa Yuuki, Takaaki Kawahara, Kouitirou Tsutahara, Touru Yamaguchi
  • CVD method and apparatus therefor
    Patent number: 5669976
    Abstract: A CVD method including the steps of: setting a semiconductor wafer on a heating stage within a CVD reaction chamber; and emitting CVD reaction gas towards at least the central major region of the wafer from a first gas blowing region of a gas head provided opposing the wafer and having a plurality of gas blowing regions separated from each other, and simultaneously emitting inert gas towards the peripheral region of the wafer from a second gas blowing region of the gas head, while maintaining the temperature of the wafer at a predetermined temperature, and while maintaining the pressure of the CVD reaction chamber within a range from 100 Torr to atmospheric pressure; whereby a CVD film of high quality can be formed in uniform thickness on the wafer, and the consumed amount of reaction gas and the amount of undesirable precipitated particles can be reduced.
    Type: Grant
    Filed: February 24, 1994
    Date of Patent: September 23, 1997
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Akimasa Yuuki, Takaaki Kawahara, Kouitirou Tsutahara, Touru Yamaguchi