Abstract: A wafer level package structure, in which a plurality of compact sensor devices with small variations in sensor characteristics are formed, and a method of producing the same are provided. This package structure has a semiconductor wafer having plural sensor units, and a package wafer bonded to the semiconductor wafer. The semiconductor wafer has a first metal layer formed with respect to each of the sensor units. The package wafer has a bonding metal layer at a position facing the first metal layer. Since a bonding portion between the semiconductor wafer and the package wafer is formed at room temperature by a direct bonding between activated surfaces of the first metal layer and the bonding metal layer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding portion.

Abstract: A wafer level package structure with a plurality of compact sensors such as acceleration sensors and gyro sensors is provided. This package structure is composed of a semiconductor wafer with plural sensor units, and a pair of package wafers bonded to both surfaces of the semiconductor wafer. Each of the sensor units has a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Since the semiconductor wafer is bonded to each of the package wafers by a solid-phase direct bonding without diffusion between a surface-activated region formed on the frame and a surface-activated region formed on the package wafer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding interface.

Abstract: A sensor device having small variations in sensor characteristics and improved resistance to electrical noise is provided. This sensor device has a sensor unit, which is provided with a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion, and a package substrate made of a semiconductor material, and bonded to a surface of the sensor unit. The package substrate has an electrical insulating film on a surface facing the sensor unit. The package substrate is bonded to the sensor unit by forming a direct bonding between an activated surface of the electrical insulating film and an activated surface of the sensor unit at room temperature.

Abstract: A compact sensor device having stable sensor characteristics and the production method are provided. The sensor device is formed with a sensor substrate and a pair of package substrates bonded to both surface of the sensor substrate. The sensor substrate has a frame with an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Surface-activated regions are formed on the frame of the sensor substrate and the package substrates by use of an atomic beam, an ion beam or a plasma of an inert gas. By forming a direct bonding between the surface-activated regions of the sensor substrate and each of the package substrates at room temperature, it is possible to avoid inconvenience resulting from residual stress at the bonding portion.

Abstract: A wafer level package structure with a plurality of compact sensors such as acceleration sensors and gyro sensors is provided. This package structure is composed of a semiconductor wafer with plural sensor units, and a pair of package wafers bonded to both surfaces of the semiconductor wafer. Each of the sensor units has a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Since the semiconductor wafer is bonded to each of the package wafers by a solid-phase direct bonding without diffusion between a surface-activated region formed on the frame and a surface-activated region formed on the package wafer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding interface.

Abstract: A sensor device having small variations in sensor characteristics and improved resistance to electrical noise is provided. This sensor device has a sensor unit, which is provided with a frame having an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion, and a package substrate made of a semiconductor material, and bonded to a surface of the sensor unit. The package substrate has an electrical insulating film on a surface facing the sensor unit. The package substrate is bonded to the sensor unit by forming a direct bonding between an activated surface of the electrical insulating film and an activated surface of the sensor unit at room temperature.

Abstract: A wafer level package structure, in which a plurality of compact sensor devices with small variations in sensor characteristics are formed, and a method of producing the same are provided. This package structure has a semiconductor wafer having plural sensor units, and a package wafer bonded to the semiconductor wafer. The semiconductor wafer has a first metal layer formed with respect to each of the sensor units. The package wafer has a bonding metal layer at a position facing the first metal layer. Since a bonding portion between the semiconductor wafer and the package wafer is formed at room temperature by a direct bonding between activated surfaces of the first metal layer and the bonding metal layer, it is possible to prevent that variations in sensor characteristics occur due to residual stress at the bonding portion.

Abstract: A compact sensor device having stable sensor characteristics and the production method are provided. The sensor device is formed with a sensor substrate and a pair of package substrates bonded to both surface of the sensor substrate. The sensor substrate has a frame with an opening, a movable portion held in the opening to be movable relative to the frame, and a detecting portion for outputting an electric signal according to a positional displacement of the movable portion. Surface-activated regions are formed on the frame of the sensor substrate and the package substrates by use of an atomic beam, an ion beam or a plasma of an inert gas. By forming a direct bonding between the surface-activated regions of the sensor substrate and each of the package substrates at room temperature, it is possible to avoid inconvenience resulting from residual stress at the bonding portion.

Abstract: A semiconductor integrated circuit comprises a timing signal generating circuit for generating a plurality of timing signals in response to an externally applied reference signal, a plurality of sequential circuits to be operated in synchronism with the plurality of timing signals respectively, a plurality of combination circuits provided between the plurality of sequential circuits. Each timing signal to be applied to each sequential circuit is delayed by the time period longer than the difference between the delay amount in a combination circuit at the preceding stage and the period of a reference signal with respect to a timing signal to be applied to a sequential circuit at the preceding stage.

Abstract: A main bus and a plurality of sub buses constitute a hierarchical bus. A signal transmission circuit is connected between the main bus and each of the plurality of sub buses. The main bus and the plurality of sub buses are precharged to a predetermined potential. The signal transmission circuit discharges a corresponding sub bus or causes the potential of the sub bus to be maintained in accordance with the potential of the main bus when a first enable signal is at a first logic level. The signal transmission circuit causes the potential of a corresponding sub bus to be maintained when a first enable signal is at a second logic level. The signal transmission circuit discharges the main bus or causes the potential of the main bus to be maintained in accordance with the potential of a corresponding sub bus when a second enable signal is at a first logic level. The signal transmission circuit causes the potential of the main bus to be maintained when a second enable signal is at a second logic level.

Abstract: A transmitter/receiver applicable as an interface circuit in ISDN terminals is disclosed. In externally designated total phase deviation measurement mode, the delay time caused by a receiver circuit and a driver circuit, i.e. a phase difference, is predetected by a phase comparator. The detected phase difference signal is stored in a phase control circuit, and the phase control circuit controls the pahse of a periodical timing signal generated from a PLL circuit. Therefore, as a data buffer applies a transmitting data to the driver circuit 7 in response to the phase control timing signal, the phase difference of the transmitting data signal generated from the driver circuit relative to the received data signal is made to be the minimum.

Abstract: There are disclosed an FCS encoder responsive to data to be transmitted for generating a frame check sequence (FCS) code to check a transmission error, and an FCS decoder for detecting an error. These FCS encoder and FCS decoder have a division circuit and a multiplication circuit each of which comprises shift registers in 16 stages and EXOR gates. Since there is no need for logical elements to be connected between the respective shift registers, this FCS encoder can be constituted to show a regular circuit layout on a semiconductor substrate.