Patents by Inventor Kouji Haga

Kouji Haga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190276612
    Abstract: A method for producing aluminum oxide is provided. The method uses an aluminum-oxide-forming agent containing a partially hydrolyzed aluminum alkyl compound containing an aluminum trialkyl or a mixture thereof, and a solvent. It is thus possible to produce an aluminum oxide thin film or aluminum oxide particles on or in a substrate that is not resistant to polar solvents. A method of producing a polyolefin-based polymer nanocomposite containing zinc oxide particles or aluminum oxide particles using a solution containing a partially hydrolyzed zinc alkyl or a solution containing a partially hydrolyzed aluminum alkyl is also provided. The polyolefin-based polymer nanocomposite contains a polyolefin substrate and zinc oxide particles or aluminum oxide particles, and does not contain a dispersant. The zinc oxide particles or aluminum oxide particles have an average particle size of less than 100 nm.
    Type: Application
    Filed: May 12, 2017
    Publication date: September 12, 2019
    Inventors: Koichiro INABA, Kouji TOYOTA, Kenichi HAGA, Toshio NAKA, Toshiaki TANIIKE
  • Patent number: 10037894
    Abstract: The present invention relates to a metal polishing liquid for polishing at least a part of metal in a substrate having the metal, comprising, component A: a metal solubilizer containing amino acids, component B: compounds having the benzotriazole skeleton, and component C: an acrylic acid polymer having the weight average molecular weight of 10,000 or more, and having the mass ratio between the component B and the component C, (component B:component C), to be 1:1 to 1:5. Use of the metal polishing liquid can simultaneously yield high polishing rates and low etching rates at higher level, enabling to form an embedded pattern with higher reliability.
    Type: Grant
    Filed: January 29, 2013
    Date of Patent: July 31, 2018
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Yasuhiro Ichige, Kouji Haga, Seiichi Kondo
  • Patent number: 9293344
    Abstract: The present invention relates to a CMP polishing slurry comprising cerium oxide particles, a dispersant, a water-soluble polymer and water, wherein the water-soluble polymer is a polymer obtained in polymerization of a monomer containing at least one of a carboxylic acid having an unsaturated double bond and the salt thereof by using at least one of a cationic azo compound and the salt thereof as a polymerization initiator. The present invention provides a polishing slurry and a polishing method allowing polishing efficiently uniformly at high speed without scratch and also allowing easy process management in the CMP technology of smoothening an interlayer dielectric film, BPSG film, and insulation film for shallow trench isolation.
    Type: Grant
    Filed: July 20, 2005
    Date of Patent: March 22, 2016
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Masato Fukasawa, Naoyuki Koyama, Yasushi Kurata, Kouji Haga, Toshiaki Akutsu, Yuuto Ootsuki
  • Publication number: 20140370707
    Abstract: The present invention relates to a metal polishing liquid for polishing at least a part of metal in a substrate having the metal, comprising, component A: a metal solubilizer containing amino acids, component B: compounds having the benzotriazole skeleton, and component C: an acrylic acid polymer having the weight average molecular weight of 10,000 or more, and having the mass ratio between the component B and the component C, (component B:component C), to be 1:1 to 1:5. Use of the metal polishing liquid can simultaneously yield high polishing rates and low etching rates at higher level, enabling to form an embedded pattern with higher reliability.
    Type: Application
    Filed: January 29, 2013
    Publication date: December 18, 2014
    Inventors: Yasuhiro Ichige, Kouji Haga, Seiichi Kondo
  • Patent number: 8900335
    Abstract: A CMP polishing slurry of the present invention contains cerium oxide particles, water, and a polymer of at least one of a methacrylic acid and the salt thereof, and/or a polymer of at least one of a methacrylic acid and the salt thereof and a monomer having an unsaturated double bond, preferably contains furthermore a dispersant or a polymer of monomers containing at least one of an acrylic acid and the salt thereof. The present invention provides a CMP polishing slurry and a polishing method that, after polishing, give a polished film having a smaller difference in residual film thickness due to a pattern density difference.
    Type: Grant
    Filed: April 27, 2010
    Date of Patent: December 2, 2014
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Masato Fukasawa, Naoyuki Koyama, Kouji Haga, Toshiaki Akutsu
  • Patent number: 8734204
    Abstract: A polishing solution for metal films that comprises an oxidizing agent, a metal oxide solubilizer, a metal corrosion preventing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a copolymer of acrylic acid and methacrylic acid, the copolymerization ratio of methacrylic acid in the copolymer being 1-20 mol % based on the total of acrylic acid and methacrylic acid.
    Type: Grant
    Filed: April 13, 2009
    Date of Patent: May 27, 2014
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Kouji Haga, Masato Fukasawa, Hiroshi Nakagawa, Kouji Mishima
  • Patent number: 8501625
    Abstract: The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, wherein the water-soluble polymer has a weight average molecular weight of 150,000 or more and is at least one member selected from among a polycarboxylic acid, a salt of a polycarboxylic acid, and a polycarboxylic acid ester. According to the invention, provided is a polishing liquid for metal film, by which polishing can be performed at a high rate even under a polishing pressure as low as 1 psi or lower, and such that a polished film after polishing is excellent in planarity, furthermore, with which a high polishing rate can be obtained even in an initial stage of polishing, and provided is a polishing method using the polishing liquid.
    Type: Grant
    Filed: July 8, 2008
    Date of Patent: August 6, 2013
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Kouji Haga, Masato Fukasawa, Jin Amanokura, Hiroshi Nakagawa
  • Patent number: 8231735
    Abstract: The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a method for polishing a substrate which comprises a step of polishing a film to be polished of the substrate with the polishing slurry. In a CMP (chemical mechanical polishing) technique for flattening inter layer dielectrics, insulating films for shallow trench isolation and the like in a manufacturing process of semiconductor devices, the present invention enables the effective and high-speed polishing.
    Type: Grant
    Filed: September 28, 2007
    Date of Patent: July 31, 2012
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Kouji Haga, Yuto Ootsuki, Yasushi Kurata, Kazuhiro Enomoto
  • Patent number: 8168541
    Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefore easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
    Type: Grant
    Filed: October 12, 2010
    Date of Patent: May 1, 2012
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Masato Fukasawa, Masato Yoshida, Naoyuki Koyama, Yuto Ootsuki, Chiaki Yamagishi, Kazuhiro Enomoto, Kouji Haga, Yasushi Kurata
  • Patent number: 8002860
    Abstract: The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.
    Type: Grant
    Filed: June 15, 2009
    Date of Patent: August 23, 2011
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Naoyuki Koyama, Kouji Haga, Masato Yoshida, Keizou Hirai, Toranosuke Ashizawa, Youiti Machii
  • Publication number: 20110104992
    Abstract: A polishing solution for metal films that comprises an oxidizing agent, a metal oxide solubilizer, a metal corrosion preventing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a copolymer of acrylic acid and methacrylic acid, the copolymerization ratio of methacrylic acid in the copolymer being 1-20 mol % based on the total of acrylic acid and methacrylic acid.
    Type: Application
    Filed: April 13, 2009
    Publication date: May 5, 2011
    Inventors: Kouji Haga, Masato Fukasawa, Hiroshi Nakagawa, Kouji Mishima
  • Publication number: 20110028073
    Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
    Type: Application
    Filed: October 12, 2010
    Publication date: February 3, 2011
    Applicant: HITACHI CHEMICAL CO., LTD.
    Inventors: Masato Fukasawa, Masato Yoshida, Naoyuki Koyama, Yuto Ootsuki, Chiaki Yamagishi, Kazuhiro Enomoto, Kouji Haga, Yasushi Kurata
  • Publication number: 20100323584
    Abstract: The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, wherein the water-soluble polymer has a weight average molecular weight of 150,000 or more and is at least one member selected from among a polycarboxylic acid, a salt of a polycarboxylic acid, and a polycarboxylic acid ester. According to the invention, provided is a polishing liquid for metal film, by which polishing can be performed at a high rate even under a polishing pressure as low as 1 psi or lower, and such that a polished film after polishing is excellent in planarity, furthermore, with which a high polishing rate can be obtained even in an initial stage of polishing, and provided is a polishing method using the polishing liquid.
    Type: Application
    Filed: July 8, 2008
    Publication date: December 23, 2010
    Applicant: HITACHI CHEMICAL CO., LTD.
    Inventors: Kouji Haga, Masato Fukasawa, Jin Amanokura, Hiroshi Nakagawa
  • Patent number: 7837800
    Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
    Type: Grant
    Filed: April 29, 2008
    Date of Patent: November 23, 2010
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Masato Fukasawa, Masato Yoshida, Naoyuki Koyama, Yuto Ootsuki, Chiaki Yamagishi, Kazuhiro Enomoto, Kouji Haga, Yasushi Kurata
  • Patent number: 7838482
    Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
    Type: Grant
    Filed: January 30, 2004
    Date of Patent: November 23, 2010
    Assignee: Hitachi Chemical Co. Ltd.
    Inventors: Masato Fukasawa, Masato Yoshida, Naoyuki Koyama, Yuto Ootsuki, Chiaki Yamagishi, Kazuhiro Enomoto, Kouji Haga, Yasushi Kurata
  • Publication number: 20100210109
    Abstract: A CMP polishing slurry of the present invention contains cerium oxide particles, water, and a polymer of at least one of a methacrylic acid and the salt thereof, and/or a polymer of at least one of a methacrylic acid and the salt thereof and a monomer having an unsaturated double bond, preferably contains furthermore a dispersant or a polymer of monomers containing at least one of an acrylic acid and the salt thereof. The present invention provides a CMP polishing slurry and a polishing method that, after polishing, give a polished film having a smaller difference in residual film thickness due to a pattern density difference.
    Type: Application
    Filed: April 27, 2010
    Publication date: August 19, 2010
    Applicant: HITACHI CHEMICAL CO., LTD.
    Inventors: Masato Fukasawa, Naoyuki Koyama, Kouji Haga, Toshiaki Akutsu
  • Publication number: 20090253355
    Abstract: The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.
    Type: Application
    Filed: June 15, 2009
    Publication date: October 8, 2009
    Inventors: Naoyuki Koyama, Kouji Haga, Masato Yoshida, Keizou Hirai, Toranosuke Ashizawa, Youiti Machii
  • Publication number: 20080254717
    Abstract: A CMP polishing slurry of the present invention contains cerium oxide particles, water, and a polymer of at least one of a methacrylic acid and the salt thereof, and/or a polymer of at least one of a methacrylic acid and the salt thereof and a monomer having an unsaturated double bond, preferably contains furthermore a dispersant or a polymer of monomers containing at least one of an acrylic acid and the salt thereof. The present invention provides a CMP polishing slurry and a polishing method that, after polishing, give a polished film having a smaller difference in residual film thickness due to a pattern density difference.
    Type: Application
    Filed: September 27, 2005
    Publication date: October 16, 2008
    Applicant: HITACHI CHEMICAL CO., LTD.
    Inventors: Masato Fukasawa, Naoyuki Koyama, Kouji Haga, Toshiaki Akutsu
  • Publication number: 20080214093
    Abstract: The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and ?-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
    Type: Application
    Filed: April 29, 2008
    Publication date: September 4, 2008
    Applicant: Hitachi Chemical Co., Ltd.
    Inventors: Masato Fukasawa, Masato Yoshida, Naoyuki Koyama, Yuto Ootsuki, Chiaki Yamagishi, Kazuhiro Enomoto, Kouji Haga, Yasushi Kurata
  • Patent number: 7410409
    Abstract: The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.
    Type: Grant
    Filed: June 15, 2000
    Date of Patent: August 12, 2008
    Assignee: Hitachi Chemical Co., Ltd.
    Inventors: Naoyuki Koyama, Kouji Haga, Masato Yoshida, Keizou Hirai, Toranosuke Ashizawa, Youiti Machii