Abstract: In an air conditioning apparatus, an air conditioning case has an upstream portion defining an air intake port through which air flows into the upstream portion substantially parallel to a core surface of a heat exchanger. The air intake port has a vertical dimension H1 that is smaller than a vertical dimension H2 of the core surface. The upstream portion has an air flow direction changing portion protruding inside of the upstream portion at a position opposite to the core surface above the air intake port. The air flow direction changing portion defines a clearance between the core surface and itself. A part of the air turned upward and further turned substantially parallel to the core surface strikes the air flow direction changing portion and flows toward the core surface through the clearance.

Abstract: The same size casing is used for interior air blowers of a combination air conditioning and heater interior unit disposed in left- and right-hand drive vehicles, respectively. A casing width is made nearly constant from a start-of-winding position to an end-of-winding position. An approximately central fan datum line which passes through a fan is offset to a suction port side with respect to a casing datum line which passes through an approximately central part of a portion of the casing parallel to a blower rotational axis. A flange portion of a motor holder is located at a position offset to one side (suction port side) along the rotational axis rather than an opposite side along the same direction in the casing. By replacement of impression cores it is possible to manufacture the casings for right- and left-hand drive vehicles, respectively.

Abstract: In a vehicle air conditioner, a heater core is disposed in an air conditioning case to heat air so that conditioned air is obtained. The air conditioning case has a rear wall surface extending substantially in a vehicle width direction and in a vertical direction, and a foot opening portion is provided in the wall surface at an upper side position of the heater core to extend in an entire width dimension of the wall surface in the vehicle width direction. A foot air duct is connected to the wall surface around the foot opening portion, and extends downwardly to be tilted toward right and left sides. Foot air outlets are provided at a bottom end of the foot air duct to be opened downwardly. Thus, a flow resistance in a foot air-outlet passage can be reduced, and air can be uniformly blown toward a foot area.

Abstract: If a refrigerant leaks from an interior heat exchanger, an outside air mode is switched ON, and a first bypass channel is opened to supply air, not having passed through the interior heat exchanger, to a passenger compartment through a defroster opening portion, while also supplying air, having passed through the internal heat exchanger, to the passenger compartment through a foot opening portion. Consequently, air having passed through the first bypass channel and thereby containing a considerable quantity of outside air free from the leaked refrigerant is supplied to the upper side of the passenger compartment, while air having passed through the interior heat exchanger and thereby containing the leaked refrigerant is supplied to the lower side of the passenger compartment, which makes it possible to prevent driver inhalation of the refrigerant.

Abstract: A centrifugal ventilator fan, which has improved fan performance and lower noise. A first outlet angle, on an upstream end of the fan, is less than a second outlet angle. Additionally, the first outlet angle is equal to zero degrees or greater and five degrees or less, while the second outlet angle is equal to thirty degrees or greater and forty five degrees or less. Furthermore, a first inlet angle, on an upstream end, is greater than a second inlet angle, on the opposite end. The first inlet angle is equal to sixty-five degrees or greater and ninety degrees or less, and the second inlet angle is equal to fifty-five degrees or more and seventy-five degrees or less.

Abstract: A centrifugal multi-blade fan has multiple blades about a rotational shaft and draws in air along the rotational shaft and then blows the air approximately perpendicular to the rotational shaft to reduce wind noise. A scroll casing encloses the multi-blade fan and defines a scroll-shaped airflow passage for directing the air blown from the multi-blade fan. The scroll casing has an intake opening and an outlet opening at a scroll end, in a downstream scroll casing portion. The scroll casing expands such that a flow passage cross-sectional area on the airflow downstream side is larger than that on an airflow upstream side. A ratio of a blade length to a diameter of the multi-blade fan is greater than or equal to 0.12, and an outer scroll casing radius, relative to the rotational axis, increases as a logarithmic spiral, its expansion angle being from 3.3° to 4.80°.

Abstract: A carrier travel layer is formed on the substrate of a semiconductor device with a buffer layer interposed, and a spacer layer and carrier supply layer are then formed on this carrier travel layer. On the carrier supply layer are provided a source electrode and a drain electrode, and a gate electrode is provided on an interposed Schottky layer. The carrier supply layer is composed of AlGaN and has tensile strain. The Schottky layer is composed of InGaN and has compressive strain. A negative piezoelectric charge is induced on the carrier supply layer side of the Schottky layer, and a positive piezoelectric charge is induced on the opposite side of the Schottky layer, whereby a sufficient Schottky barrier height is obtained and leakage current is suppressed.

Abstract: A semiconductor device testing apparatus that has a laminate structure composed of a contact sheet having a first opening, an elastic sheet having a second opening and a base plate having a third opening. A supply voltage is applied to an external terminal located on a peripheral portion of the contact sheet. A probe of a probe portion is contacted to a signal electrode of a semiconductor device through the third, second and first openings.

Abstract: The same size casing is used for interior air blowers of a combination air conditioning and heater interior unit disposed in left- and right-hand drive vehicles, respectively. A casing width is made nearly constant from a start-of-winding position to an end-of-winding position. An approximately central fan datum line which passes through a fan is offset to a suction port side with respect to a casing datum line which passes through an approximately central part of a portion of the casing parallel to a blower rotational axis. A flange portion of a motor holder is located at a position offset to one side (suction port side) along the rotational axis rather than an opposite side along the same direction in the casing. By replacement of impression cores it is possible to manufacture the casings for right- and left-hand drive vehicles, respectively.

Abstract: A rucksack is provided which is equipped with a speaker system which creates, at a periphery of each ear of a rucksack carrier, a sound field in which sounds from an electric acoustic device can be heard clearly and naturally without use of headphones or earphones, and ambient noise as well can be heard clearly. A speaker unit, which radiates plane waves toward ears or vicinities of ears of the rucksack carrier, is disposed at a shoulder belt of a rucksack. The speaker unit is connected to a music playback device or the like accommodated in an accommodating portion of the rucksack.

Abstract: A semiconductor device of the present invention comprises Al0.3Ga0.7N layer 4 and Al0.1Ga0.9N layer 5 having different Al contents as an electron supply layer on GaN layer 6 serving as an active layer. An area where Al0.3Ga0.7N layer 4 is formed is used as a low resistance area, while an area where Al0.1Ga0.9N layer 5 is formed is used as a high resistance area. As a result, a distribution of two-dimensional electrons serving as carriers is produced within a horizontal plane perpendicular to the thickness direction of the layers to form a desired device configuration. For example, when the configuration is applied to a transistor configuration, a channel concentration under a gate is reduced to improve withstand voltage between the gate and a drain, and at the same time, a channel concentration in source and drain areas is increased to realize low contact resistance.

Abstract: In a predetermined range from a nose portion toward a scroll finish side in a scroll casing of a centrifugal blower, a first clearance dimension on a side of a suction port between an outer periphery of a centrifugal fan and a side plate of the scroll casing is set smaller than a second clearance dimension on a side opposite to the suction port between the outer periphery of the centrifugal fan and the side plate of the scroll casing. In addition, in the vicinity of the nose portion, a first wall part of the scroll casing on the side of the suction port protrudes toward a scroll finish side, from a second wall part of the scroll casing on the side opposite to the suction port.

Abstract: In a method of manufacturing a semiconductor device, trench sections are formed on a side of one of opposing surface portions of a substrate. At lest a part of each of the trench sections is covered by a power supply metal layer which is formed on the one surface portion of the substrate. The substrate is fixed to a support such that the one surface of the substrate fits to the support. A chip is separated from the substrate using the trench sections. A conductive film is formed on side surface portions of the chip and the other surface portion of the chip. Then, the chip is separated from the support.

Abstract: In a tip portion structure basically having a substrate, a plate spring, and a ground block, the substrate is attached to a signal line on a back surface of the substrate and is contacted on the tip with the signal electrode of the DUT placed on a device stage. The plate spring is made of a resilient material, placed on the front side of the substrate, and positioned to apply a pressure to the substrate. The ground block is positioned between the signal line and the device stage functioned as a ground electrode of the DUT. Alternatively, the tip portion structure further may have a ground plate or a ground surface formed of a conductive thin plate covering entirely the front surface of the substrate, and shaped to surround the signal line in cooperation with the ground block. A plurality of the signal lines may be arranged in parallel on the same plane of the substrate.

Abstract: In a method of manufacturing a semiconductor device, trench sections are formed on a side of one of opposing surface portions of a substrate. At least a part of each of the trench sections is covered by a power supply metal layer which is formed on the one surface portion of the substrate. The substrate is fixed to a support such that the one surface of the substrate fits to the support. A chip is separated from the substrate using the trench sections. A conductive film is formed on side surface portions of the chip and the other surface portion of the chip. Then, the chip is separated from the support.

Abstract: There is provided a semiconductor device testing apparatus that can perform a measurement of an electrical characteristic of a semiconductor device that has many electrodes and operates at high frequency. The semiconductor device testing apparatus comprises: a contact sheet (105) having supply voltage electrodes (107c, 107b) of bump structure on a thin insulator sheet (105a), which contact with a source electrode (100c) and a ground electrode (100b) of a semiconductor device (100), and a first opening (113) located at a position facing a signal (100a) of the semiconductor device (100).

Abstract: A semiconductor device of the present invention comprises Al0.3Ga0.7N layer 4 and Al0.1Ga0.9N layer 5 having different Al contents as an electron supply layer on GaN layer 6 serving as an active layer. An area where Al0.3Ga0.7N layer 4 is formed is used as a low resistance area, while an area where Al0.1Ga0.9N layer 5 is formed is used as a high resistance area. As a result, a distribution of two-dimensional electrons serving as carriers is produced within a horizontal plane perpendicular to the thickness direction of the layers to form a desired device configuration. For example, when the configuration is applied to a transistor configuration, a channel concentration under a gate is reduced to improve withstand voltage between the gate and a drain, and at the same time, a channel concentration in source and drain areas is increased to realize low contact resistance.

Abstract: A carrier travel layer is formed on the substrate of a semiconductor device with a buffer layer interposed, and a spacer layer and carrier supply layer are then formed on this carrier travel layer. On the carrier supply layer are provided a source electrode and a drain electrode, and a gate electrode is provided on an interposed Schottky layer. The carrier supply layer is composed of AlGaN and has tensile strain. The Schottky layer is composed of InGaN and has compressive strain. A negative piezoelectric charge is induced on the carrier supply layer side of the Schottky layer, and a positive piezoelectric charge is induced on the opposite side of the Schottky layer, whereby a sufficient Schottky barrier height is obtained and leakage current is suppressed.

Abstract: In a tip portion structure basically having a substrate, a plate spring, and a ground block, the substrate is attached to a signal line on a back surface of the substrate and is contacted on the tip with the signal electrode of the DUT placed on a device stage. The plate spring is made of a resilient material, placed on the front side of the substrate, and positioned to apply a pressure to the substrate. The ground block is positioned between the signal line and the device stage functioned as a ground electrode of the DUT. Alternatively, the tip portion structure further may have a ground plate or a ground surface formed of a conductive thin plate covering entirely the front surface of the substrate, and shaped to surround the signal line in cooperation with the ground block. A plurality of the signal lines may be arranged in parallel on the same plane of the substrate.

Abstract: A high-frequency probe according to the present invention comprises a probe chip that has an end part that is pressed to an electrode and is covered by a electrically conductive outer enclosure, and slides in a vertical direction by an inner surface of this electrically conductive outer enclosure inside this electrically conductive outer enclosure. A signal conductive pattern is fixed inside this probe chip and is connected with a inner conductor having elasticity. The inner conductor can be bent in the vertical direction at a central part of a hole having an opening, which is sufficiently long in the vertical direction, in the center space of a ground conductor, which is fixed to an end part of the main block, when the inner conductor is pressed due to contact of the end part. In addition, the high-frequency probe has a thin shape of a maximum thickness in a transverse direction which is perpendicular to the vertical direction that is a direction of the probe being pressed to a device electrode.