Abstract: A polishing agent containing abrasive grains and water, in which the abrasive grains contain silica particles, an average particle diameter Rave of the abrasive grains is 50 nm or more, a ratio Rave/Rmin of the average particle diameter Rave to an average minor diameter Rmin of the abrasive grains is 1.0 to 2.0, and a zeta potential of the abrasive grains in the polishing agent is positive.

Abstract: A polishing agent containing abrasive grains and water, in which the abrasive grains contain silica particles, an average particle diameter Rave of the abrasive grains is 50 nm or more, a ratio Rave/Rmin of the average particle diameter Rave to an average minor diameter Rmin of the abrasive grains is 1.0 to 2.0, and a zeta potential of the abrasive grains in the polishing agent is positive.

Abstract: An embodiment of the present invention relates to a CMP polishing liquid used for polishing a polishing target surface having at least a cobalt-containing portion and a metal-containing portion that contains a metal other than cobalt, wherein the CMP polishing liquid contains polishing particles, a metal corrosion inhibitor and water, and has a pH of 4.0 or less, and when the corrosion potential EA of cobalt and the corrosion potential EB of the metal are measured in the CMP polishing liquid, the absolute value of the corrosion potential difference EA?EB between the corrosion potential EA and the corrosion potential EB is 0˜300 mV.

Abstract: The CMP polishing solution of the invention comprises (A) a metal corrosion inhibitor containing a compound with a 1,2,3-triazolo[4,5-b]pyridine skeleton, (B) an abrasive grain having a positive zeta potential in the CMP polishing solution, (C) a metal oxide solubilizer and (D) an oxidizing agent. The polishing method of the invention comprises a first polishing step in which the conductive substance layer of a substrate comprising an interlayer insulating filth having an elevated section and a trench at the surface, a barrier layer formed following the surface of the interlayer insulating film and the conductive substance layer formed covering the barrier layer, is polished to expose the barrier layer located on the elevated section of the interlayer insulating film, and a second polishing step in which the barrier layer exposed in the first polishing step is polished using the CMP polishing solution to expose the elevated section of the interlayer insulating film.

Abstract: An embodiment of the present invention relates to a CMP polishing liquid used for polishing a polishing target surface having at least a cobalt-containing portion and a metal-containing portion that contains a metal other than cobalt, wherein the CMP polishing liquid contains polishing particles, a metal corrosion inhibitor and water, and has a pH of 4.0 or less, and when the corrosion potential EA of cobalt and the corrosion potential EB of the metal are measured in the CMP polishing liquid, the absolute value of the corrosion potential difference EA?EB between the corrosion potential EA and the corrosion potential EB is 0˜300 mV.

Abstract: A CMP polishing liquid for polishing a ruthenium-based metal, comprising polishing particles, an acid component, an oxidizing agent, a triazole-based compound, a quaternary phosphonium salt and water, wherein the acid component contains at least one selected from the group consisting of inorganic acids, monocarboxylic acids, carboxylic acids having a plurality of carboxyl groups and having no hydroxyl group, and salts thereof, the polishing particles have a negative zeta potential in the CMP polishing liquid, and the pH of the CMP polishing liquid is 3.0 or more and less than 7.0.

Abstract: Provided is a polishing method that polishes a substrate having (1) silicon nitride as a stopper, and, on the stopper, (2) at least a portion of a wiring metal, and (3) at least a portion of an insulating material. The method includes a step of supplying a CMP slurry, and thereby polishing the (2) wiring metal and (3) insulating material. The CMP slurry contains (A) a copolymer of (a) a monomer that is anionic and does not contain a hydrophobic substituent and (b) a monomer containing a hydrophobic substituent; (B) an abrasive grain; (C) an acid; (D) an oxidizing agent; and (E) a liquid medium, the component (B) has a zeta potential of +10 mV or more in the CMP slurry, and the copolymerization ratio (a):(b) of the component (A) is 25:75 to 75:25 as a molar ratio, with the pH being 5.0 or less.

Abstract: A CMP polishing liquid for polishing a ruthenium-based metal, comprising polishing particles, an acid component, an oxidizing agent, and water, wherein the acid component contains at least one selected from the group consisting of inorganic acids, monocarboxylic acids, carboxylic acids having a plurality of carboxyl groups and having no hydroxyl group, and salts thereof, the polishing particles have a negative zeta potential in the CMP polishing liquid, and the pH of the CMP polishing liquid is less than 7.0.

Abstract: Provided is a polishing method including a step of preparing a substrate having (1) silicon nitride as a stopper, and to a direction of a surface subjected to polishing from the stopper, (2) at least a portion of a wiring metal, and (3) at least a portion of an insulating material; a step of supplying a CMP slurry, and thereby polishing the (2) wiring metal and (3) insulating material on the direction of the surface subjected to polishing; and a step of stopping polishing before the (1) silicon nitride is exposed and completely removed, in which method the CMP slurry contains (A) a copolymer of (a) a monomer that is anionic and does not contain a hydrophobic substituent and (b) a monomer containing a hydrophobic substituent; (B) an abrasive grain; (C) an acid; (D) an oxidizing agent; and (E) a liquid medium, the component (B) has a zeta potential of +10 mV or more in the CMP slurry, and the copolymerization ratio (a):(b) of the component (A) is 25:75 to 75:25 as a molar ratio, with the pH being 5.0 or less.

Abstract: A polishing solution for metal films that comprises an oxidizing agent, a metal oxide solubilizer, a metal corrosion preventing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a copolymer of acrylic acid and methacrylic acid, the copolymerization ratio of methacrylic acid in the copolymer being 1-20 mol % based on the total of acrylic acid and methacrylic acid.

Abstract: The CMP polishing solution of the invention comprises (A) a metal corrosion inhibitor containing a compound with a 1,2,3-triazolo[4,5-b]pyridine skeleton, (B) an abrasive grain having a positive zeta potential in the CMP polishing solution, (C) a metal oxide solubilizer and (D) an oxidizing agent. The polishing method of the invention comprises a first polishing step in which the conductive substance layer of a substrate comprising an interlayer insulating filth having an elevated section and a trench at the surface, a barrier layer formed following the surface of the interlayer insulating film and the conductive substance layer formed covering the barrier layer, is polished to expose the barrier layer located on the elevated section of the interlayer insulating film, and a second polishing step in which the barrier layer exposed in the first polishing step is polished using the CMP polishing solution to expose the elevated section of the interlayer insulating film.

Abstract: A polishing solution for metal films that comprises an oxidizing agent, a metal oxide solubilizer, a metal corrosion preventing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a copolymer of acrylic acid and methacrylic acid, the copolymerization ratio of methacrylic acid in the copolymer being 1-20 mol % based on the total of acrylic acid and methacrylic acid.

Abstract: An optical recording disk includes a support substrate, grooves and lands alternately formed on one major surface of the support substrate, an optical functioning layer formed on the one major surface of the support substrate on which the grooves and the lands are formed and including a recording layer and a light transmission layer formed on the optical functioning layer, the grooves and the lands being formed so that the depth Gd of each of the grooves is equal to or larger than 15 nm and equal to or smaller than 25 nm and the half width Gw is equal to or larger than 150 nm and is equal to or smaller than 230 nm, and the recording layer including a first recording film containing Si as a primary component and a second recording film containing Cu as a primary component.