Abstract: The present invention is a single-crystal manufacturing apparatus based on the Czochralski method having a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are placeable in the multipurpose chamber respectively. As a result, there is provided a single-crystal manufacturing apparatus that enables, in manufacture of a single crystal of a large diameter, e.g., approximately 200 mm or more, an operating rate of the single-crystal manufacturing apparatus and productivity of the single crystal to be improved.

Abstract: The present invention is a single-crystal manufacturing apparatus based on the Czochralski method having a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are placeable in the multipurpose chamber respectively. As a result, there is provided a single-crystal manufacturing apparatus that enables, in manufacture of a single crystal of a large diameter, e.g., approximately 200 mm or more, an operating rate of the single-crystal manufacturing apparatus and productivity of the single crystal to be improved.

Abstract: There are provided an apparatus for producing single crystals and a method for producing single crystals, which can absorb and eliminate vibration generated by a crucible rotation driving motor, or prevent transmission of the vibration to a melt, or attenuate the vibration in the production of single crystals by the CZ method. The apparatus for producing single crystals comprises a crucible for accommodating a raw material melt, a mechanism for pulling a crystal from the melt, a mechanism for rotating the crucible, and a transfer mechanism for vertically moving the crucible, wherein, in the rotation mechanism for the crucible, a ball spline is used for power transmission between a crucible-supporting shaft and a crucible rotation driving unit, and the crucible rotation driving unit is fixedly installed on a substructure of the apparatus for producing single crystals. Further, single crystals are produced by using the apparatus.

Abstract: There are provided an apparatus for producing single crystals and a method for producing single crystals, which can absorb and eliminate vibration generated by a crucible rotation driving motor, or prevent transmission of the vibration to a melt, or attenuate the vibration in the production of single crystals by the CZ method. The apparatus for producing single crystals comprises a crucible for accommodating a raw material melt, a mechanism for pulling a crystal from the melt, a mechanism for rotating the crucible, and a transfer mechanism for vertically moving the crucible, wherein, in the rotation mechanism for the crucible, a ball spline is used for power transmission between a crucible-supporting shaft and a crucible rotation driving unit, and the crucible rotation driving unit is fixedly installed on a substructure of the apparatus for producing single crystals. Further, single crystals are produced by using the apparatus.

Abstract: A novel device for producing a single crystal by the CZ or MCZ method is provided, which comprising a crucible for containing silicon melt therein, a wire reel and a wire for pulling a single crystal, a motor and a rotation shaft for rotating the crucible, a speed change device being inserted between the motor and the rotation shaft, and, if necessary, a magnetic field generator, by which the magnetic field is applied to the melt. According to the device for producing a single crystal, the rotation accuracy of a crucible can be improved, so that the concentrations of impurities in the pulled single crystal can be highly precisely controlled.

Abstract: An apparatus for producing a single crystal by the Czochralski method is disclosed in which an exhaust system is provided with a water sealing bubbler. On the upstream side of the bubbler is provided a buffer or a vacuum breaker or a buffer and a vacuum breaker. The structure prevents the sealing water in the bubbler from flowing backward, so that danger of steam explosion can be avoided.

Abstract: An apparatus for measuring the weight of a crystal in a cable-type crystal pulling apparatus. A cable winding mechanism of the crystal pulling apparatus includes a guide pulley which is supported by a load plate and which changes the direction of the cable by 180 degrees, and a winding drum 8 which is disposed on a base plate and onto which the cable is wound. The load plate, on which a load due to pulling acts, is supported by a plurality of small-load load cells so that the load is equally distributed to the small-load load cells. Thus, the weight measuring apparatus can have a simple and low-cost structure, and the accuracy of measurement can be improved.

Abstract: A crystal pulling apparatus is disclosed in which a single crystal ingot is pulled from a melt of a crystalline material by using a cable. A crimp portion and a spherical portion supported by the crimp portion are provided in the vicinity of the tip of the cable. Two divided couplings are screwed into a chuck body of a seed chuck. The couplings have an accommodation space therein so as to accommodate the cable and the spherical portion, and conical hole sections serving as the shoulder portion of the accommodation space contact and hold the spherical portion. This structure allows the cable to rotate during crystal pulling operation and facilitates attachment of the seed chuck to the cable and removal of the seed chuck from the cable.

Abstract: An apparatus for producing a single crystal ingot grown by the Czochralski method includes a plurality of grip arms each having a grip finger engageable with a downwardly facing engagement step formed on an upper part of the single crystal, and a ring slidably fitted around a plurality of grip arms to hold the grip arms in a closed position in which the engagement step of the single crystal is firmly gripped by the grip fingers against detachment. The apparatus having such a ring is particularly advantageous when used for the production of a heavy single crystal ingot in which the grip arms are forced to spread apart by the weight of the single crystal ingot.

Abstract: A load measuring device for measuring the pulling up load of a monocystalline rod (38) grown by the Czochralski method utilizes a strain gauge (20). The monocrystalline rod (38) is pulled up by wire rope (36) consisting of multiple strands. The pulley (34) guiding the wire rope between a drum (36) and a crystal holder (44) has a guide groove which has a cross-sectional shape which is substantially identical to a semicircle circumscribing the wire rope.

Abstract: A supporting apparatus for a semiconductor noncrystal rod comprises a movable ring adapted to move freely in horizontal directions unless it is engaged with the monocrystal rod, a lock means to prevent the movable ring from horizontally moving, and a drive means to elevate the movable ring.