Abstract: A flexible boot for a constant velocity universal joint includes: attachment portions to a mating member at both ends; and a bent portion provided between the attachment portions and absorbing deformation caused by operation of a constant velocity universal joint. The flexible boot is made of a rubber material obtained by blending 50 to 80 parts by weight of HNBR having an acrylonitrile content of 15 to 21 wt % and 20 to 50 parts by weight of EPDM, the rubber material having an elastic recovery rate of 18% or more at ?40° C. in a TR test.

Abstract: Provided is a fastening method capable of fastening a piercing nut to a stacked body in which a plurality of plate-shaped workpieces are stacked so as to develop a high fastening strength. A fastening method of a piercing nut 1 includes: a first clinching step of fastening a piercing nut 1 to a first plate-shaped workpiece W1 by punching out the first plate-shaped workpiece W1 in a circular shape, and extending a peripheral area of the punched portion in a circumferential cavity 4 of the piercing nut 1; and a second clinching step of punching out a second plate-shaped workpiece W2 in a circular shape, and extending a peripheral area of the punched portion on an outside of an extended portion W1f of the first plate-shaped workpiece W1 in the circumferential cavity 4 of the piercing nut 1.

Abstract: A method disclosed herewith is a method for producing a first seamless metal tube with a first wall thickness and a second seamless metal tube with a second wall thickness by using a three-roll-type inclined rolling mill, and the method includes a first inclination rolling step (#5), a setting changing step (#10), and a second inclination rolling step (#15). At the first inclination rolling step, a first workpiece is rolled by the inclined rolling mill. At the setting changing step, a setup condition of the inclined rolling mill is changed in a manner (a) or (b) as described below. At the second inclined rolling step, a second workpiece is rolled by the inclined rolling mill under the changed condition. (a) When the second wall thickness is smaller than the first wall thickness, the cross angle of each of the inclined rolls is made greater than the cross angle set for the first inclination rolling step.

Abstract: Provided are a high resistance CdTe-based compound single crystal with miniaturized Te precipitates and a method for producing the same. According to one embodiment of the present invention, a CdTe based compound single crystal is provided including a precipitate having a particle size of less than 0.1 ?m obtained from an analysis by a light scattering tomography method. In the CdTe based compound single crystal, resistivity may be 1×107 ?cm or more. In addition, in the CdTe based compound single crystal, a precipitate having a particle size of 0.1 ?m or more obtained from the analysis by the light scattering tomography method is not detected. In the CdTe based compound single crystal, the precipitate may be a Te precipitate.

Abstract: The present invention provides a recombinant strain highly producing fibrinogen which is an animal cell strain coexpressing a fibrinogen and an ?2PI and/or PAI-2, genes encoding A? chain, B? chain and ? chain of fibrinogen, a production method of a recombinant strain highly producing fibrinogen, including introducing gene(s) encoding ?2PI and/or PAI-2 into an animal cell, and coexpressing fibrinogen and ?2PI and/or PAI-2 in the animal cell, and a production method of a recombinant fibrinogen including culturing a recombinant strain highly producing fibrinogen in a medium, and recovering fibrinogen from the obtained culture.

Abstract: An UBM electrode structure body for a radiation detector and a radiation detector arranged with the UBM electrode structure body are provided for suppressing peeling and having high electrode adhesion. In addition, a manufacturing method of an UBM electrode structure body for a radiation detector and a manufacturing method of a radiation detector using the UBM electrode structure body are provided in which peeling does not occur during UBM structure formation, a solder bonding process or bonding of a signal line to a Pt layer. The UBM electrode structure body for a radiation detector of the present invention is arranged with a CdTe substrate or CdZnTe substrate and a Pt electrode layer arranged on the CdTe substrate or CdZnTe substrate, adhesion of the Pt electrode layer with respect to the CdTe substrate or the CdZnTe substrate being 0.5 N/cm or more.

Abstract: A lubricating oil composition for internal combustion engines containing a base oil mixture with specific properties and a monoglyceride with a specific structure. The lubricating oil composition of the present 5 invention, as well as providing outstanding wear resistance and fuel economy, causes condensed water etc. from water vapor produced as a result of fuel combustion to be dispersed in the oil, so preventing corrosion or rusting of the engine.

Abstract: Provided are a high resistance CdTe-based compound single crystal with miniaturized Te precipitates and a method for producing the same. According to one embodiment of the present invention, a CdTe based compound single crystal is provided including a precipitate having a particle size of less than 0.1 ?m obtained from an analysis by a light scattering tomography method. In the CdTe based compound single crystal, resistivity may be 1×107 ?cm or more. In addition, in the CdTe based compound single crystal, a precipitate having a particle size of 0.1 ?m or more obtained from the analysis by the light scattering tomography method is not detected. In the CdTe based compound single crystal, the precipitate may be a Te precipitate.

Abstract: An UBM electrode structure body for a radiation detector and a radiation detector arranged with the UBM electrode structure body are provided for suppressing peeling and having high electrode adhesion. In addition, a manufacturing method of an UBM electrode structure body for a radiation detector and a manufacturing method of a radiation detector using the UBM electrode structure body are provided in which peeling does not occur during UBM structure formation, a solder bonding process or bonding of a signal line to a Pt layer. The UBM electrode structure body for a radiation detector of the present invention is arranged with a CdTe substrate or CdZnTe substrate and a Pt electrode layer arranged on the CdTe substrate or CdZnTe substrate, adhesion of the Pt electrode layer with respect to the CdTe substrate or the CdZnTe substrate being 0.5 N/cm or more.

Abstract: The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.

Abstract: The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.

Abstract: The present invention provides a recombinant strain highly producing fibrinogen which is an animal cell strain coexpressing a fibrinogen and an ?2PI and/or PAI-2, genes encoding A? chain, B? chain and ? chain of fibrinogen, a production method of a recombinant strain highly producing fibrinogen, including introducing gene(s) encoding ?2PI and/or PAI-2 into an animal cell, and coexpressing fibrinogen and ?2PI and/or PAI-2 in the animal cell, and a production method of a recombinant fibrinogen including culturing a recombinant strain highly producing fibrinogen in a medium, and recovering fibrinogen from the obtained culture.

Abstract: A lubricating oil composition for internal combustion engines containing a base oil mixture with specific properties and a monoglyceride with a specific structure. The lubricating oil composition of the present 5 invention, as well as providing outstanding wear resistance and fuel economy, causes condensed water etc. from water vapour produced as a result of fuel combustion to be dispersed in the oil, so preventing corrosion or rusting of the engine.

Abstract: A lubricating oil composition for internal combustion engines containing a specific base oil, monoglyceride with a specific structure and ethylene oxide adduct with a specific structure in specific quantities and/or ratios. The lubricating oil composition of the present invention, as well as providing outstanding wear resistance and fuel economy, causes condensed water etc. from water vapour produced as a result of fuel combustion to be dispersed in the oil, so preventing corrosion or rusting of the engine.

Abstract: A semiconductor device comprises an insulated gate field effect transistor and a protection diode. The insulated gate field effect transistor has a gate electrode formed on a gate insulating film, a source and a drain. The source and the drain are formed in a first area of a semiconductor substrate. A first silicon oxide film is formed on a second area of the semiconductor substrate adjacent to the first area. The first silicon oxide film is thicker than the gate insulating film and contains larger amount of impurities than the gate insulating film. A poly-silicon layer is formed on the first silicon oxide film. The protection diode has a plurality of PN-junctions formed in the poly-silicon layer. The protection diode is connected between the gate electrode and the source so as to prevent breakdown of the gate insulating film.

Abstract: There is provided a charging power source apparatus by which quick charging can be carried out within a required range without imposing a burden on a secondary battery or a charging circuit. The charging power source apparatus is equipped with a plurality of control modes (e.g. normal charging mode and quick charging mode) for operating respectively with a plurality of output characteristics where the magnitudes of output currents being limited are different, and a detecting circuit for detecting a voltage appearing between the output terminals, and is configured such that one of the plurality of control modes is selected based on detection result from the detection circuit to perform an output operation.

Abstract: A TCP type semiconductor device includes a base film; a semiconductor chip mounted on the base film; and a plurality of leads formed on the base film and electrically connected with the semiconductor chip. Each of the plurality of leads has an external terminal portion exposed externally. The external terminal portion of the each lead includes: a first portion having a first thickness; and a second portion having a second thickness which is thinner than the first thickness. The first portion and the second portion are arranged to oppose to each other between adjacent two of the plurality of leads.

Abstract: Provided is an electronic system wherein power is accurately supplied even with a power delivery line resistance and a connector contact resistance, and furthermore, a plurality of electronic devices having requiring different power supply voltages can be handled with one power supply device. The electronic system is provided with an electronic device (50), and a power supply device (10) which is arranged to be connected/removed to and from the electronic device (50) and supplies power through a cable when connected. The electronic device (50) is provided with a first detection circuit (51) for performing detection relating to the supply amount of the power supply and outputting a first detection signal, and a control signal terminal.

Abstract: A semiconductor device comprises an insulated gate field effect transistor and a protection diode. The insulated gate field effect transistor has a gate electrode formed on a gate insulating film, a source and a drain. The source and the drain are formed in a first area of a semiconductor substrate. A first silicon oxide film is formed on a second area of the semiconductor substrate adjacent to the first area. The first silicon oxide film is thicker than the gate insulating film and contains larger amount of impurities than the gate insulating film. A poly-silicon layer is formed on the first silicon oxide film. The protection diode has a plurality of PN-junctions formed in the poly-silicon layer. The protection diode is connected between the gate electrode and the source so as to prevent breakdown of the gate insulating film.

Abstract: Disclosed is a power source apparatus including: a connector for outputting electric power, wherein the apparatus performs power output through a cable connected to the connector, a power source circuit capable of changing an output thereof; a control circuit to perform output control of the power source circuit; and a first detection circuit including an input terminal for detection connected to wiring on a side of a tip of the cable to perform detection pertaining to an output quantity of electric power, wherein the output control is performed based on a detection signal of the first detection circuit, the detection signal fed back to the control circuit.