Abstract: Provided are abrasive grains and a composition for chemical mechanical polishing which are for selectively polishing a silicon nitride film, and which are applicable not only to silicon oxide films but also to amorphous silicon films and polysilicon films. This method for manufacturing abrasive grains includes: a first step of heating a mixture which contains particles having a sulfanyl group (—SH) fixed to the surface thereof via covalent bonds, and which contains a compound having carbon-carbon unsaturated double bonds; and a second step, which is performed after the first step, of further adding a peroxide and carrying out heating.

Abstract: Provided are a composition for chemical mechanical polishing and a method for chemical mechanical polishing, whereby a tungsten film as a wiring material can be polished at high speed, and the occurrence of surface defects in a polished surface can be reduced. A composition for chemical mechanical polishing pertaining contains (A) alumina particles, at least a portion of the surface of which is coated with a coating film of silica alumina, and (B) a liquid medium.

Abstract: Provided are a composition for chemical mechanical polishing and a chemical mechanical polishing method, which enable reduction in occurrence of surface defects in a polished surface and which enable high speed polishing of a tungsten film which is a wiring material. The composition for chemical mechanical polishing contains: (A) particles containing alumina and having a functional group represented by general formula (1); and (B) a liquid medium. (1): —SO3?M+ (In the formula, M+ represents a monovalent cation.

Abstract: An aqueous dispersion for chemical mechanical polishing includes: (A) silica particles; (B) at least one kind selected from the group consisting of organic acids and salts thereof; and (C) at least one kind selected from the group consisting of amino group-containing silane compounds and condensates thereof, and has a pH of 7 or more and 14 or less.

Abstract: A sensor signal transmission system for transmitting serially sensor signals produced in parallel by a plurality of sensors installed at a remote station to a central control station. The central control station includes a clock generating circuit, a signal conversion circuit for converting a voltage of a power supply source into clock-pulse superposed voltage signal, a start signal generating circuit, and a data extracting/converting circuit for detecting levels of an input signal to the central control station at the timing of the clock signal. The local station is connected to the central control station and signal includes a power generating circuit for generating a source voltage required for electrical energization of the sensors by smoothing the pulse superposed voltage signal. The clock pulses are modulated by the sensor state signals, which modulation is detected by the data extracting/converting circuit of the central station for evaluation or other processing thereof.

Abstract: An electroluminescence device is constituted by sequentially stacking a glass substrate, a transparent electrode, a luminescent layer, an interlayer containing a semiconductor having a band gap of 2.4 eV or more, a current-limiting layer containing a conductive powder, and a backplate.