Patents by Inventor Kouji Neishi

Kouji Neishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8531033
    Abstract: A contact plug structure formed on a contact hole of an insulating layer of a semiconductor device includes a metal silicide layer formed on a bottom part of the contact hole of the insulating layer, a manganese oxide layer formed on the metal silicide layer in the contact hole, and a buried copper formed on the manganese oxide layer which substantially fills the contact hole.
    Type: Grant
    Filed: September 7, 2010
    Date of Patent: September 10, 2013
    Assignee: Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Akihiro Shibatomi, Kouji Neishi
  • Publication number: 20110057317
    Abstract: A contact plug structure formed on a contact hole of an insulating layer of a semiconductor device includes a metal silicide layer formed on a bottom part of the contact hole of the insulating layer, a manganese oxide layer formed on the metal silicide layer in the contact hole, and a buried copper formed on the manganese oxide layer which substantially fills the contact hole.
    Type: Application
    Filed: September 7, 2010
    Publication date: March 10, 2011
    Applicants: Tohoku University, Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Akihiro Shibatomi, Kouji Neishi