Abstract: The present invention provides a polycarbonate resin composition having excellent low-temperature impact resistance, durability, and flame retardancy. The present invention is directed to a polycarbonate resin composition comprising, relative to 100 parts by weight of a resin component containing 10 to 90 parts by weight of (A) a polycarbonate-polydiorganosiloxane copolymer (component A) and 90 to 10 parts by weight of (B) a polycarbonate resin (component B), 0.5 to 7 parts by weight of (C) a phosphazene compound (component C) and 0.1 to 0.5 parts by weight of (D) a fluorine-containing anti-dripping agent (component D), wherein the ratio of the viscosity average molecular weight of the component A to that of the component B (Mv (component A)/Mv (component B)) is 1 to 1.

Abstract: Provided are a polycarbonate resin and an optical film formed therefrom, having wavelength dispersion characteristics close to the ideal broad bandwidth, excellent durable stability and flexibility, high retardation developability, a low photoelastic constant, and excellent melt processability.

Abstract: A gate wiring, a source electrode, a source-electrode connecting wiring, a pixel electrode, a gate-terminal extraction electrode, and a source-terminal extraction electrode are formed in the same layer on a planarization insulating film. The gate wiring is connected to a gate electrode through a gate-electrode-portion contact hole. The source electrode is connected to a semiconductor film through a source-electrode-portion contact hole. The source-electrode connecting wiring is connected to the semiconductor film and a source wiring through the source-electrode-portion contact hole and a source-wiring-portion contact hole, respectively. The pixel electrode is connected to the semiconductor film through a drain (pixel)-electrode-portion contact hole.

Abstract: Provided are a polycarbonate resin and an optical film formed therefrom, having wavelength dispersion characteristics close to the ideal broad bandwidth, excellent durable stability and flexibility, high retardation developability, a low photoelastic constant, and excellent melt processability, comprising: a unit (A) represented by the following formula: [wherein R1 and R2 each independently represent a hydrogen atom, hydrocarbon group having 1 to 10 carbon atoms optionally containing an aromatic group, or a halogen atom, and m and n each independently represent an integer of 0 to 4], a unit (B) represented by the following formula: [wherein R3 and R4 each independently represent a hydrogen atom, hydrocarbon group having 1 to 10 carbon atoms optionally containing an aromatic group, or a halogen atom, R5 and R6 each independently represent a hydrocarbon group having 1 to 10 carbon atoms optionally containing an aromatic group, s and t each independently represent an integer of 0 to 4, an

Abstract: A gate wiring, a source electrode, a source-electrode connecting wiring, a pixel electrode, a gate-terminal extraction electrode, and a source-terminal extraction electrode are formed in the same layer on a planarization insulating film. The gate wiring is connected to a gate electrode through a gate-electrode-portion contact hole. The source electrode is connected to a semiconductor film through a source-electrode-portion contact hole. The source-electrode connecting wiring is connected to the semiconductor film and a source wiring through the source-electrode-portion contact hole and a source-wiring-portion contact hole, respectively. The pixel electrode is connected to the semiconductor film through a drain (pixel)-electrode-portion contact hole.

Abstract: An organic EL display device includes a glass substrate and a flattening film arranged above the glass substrate. A plurality of anodes are arranged on a surface of the flattening film. A plurality of organic EL layers are arranged on a surface of the anodes. The flattening film has irregularities formed in at least a partial surface in a region outside a region where the plurality of organic EL layers are arranged. According to such a structure, an organic EL display device in which remaining of moisture in an insulating film is suppressed can be provided.

Abstract: Titanium oxide-based photocatalysts which contain a metal halide in titanium oxide and which are prepared from titanium oxide and/or its precursor, which may optionally be heat treated, by contact with a reactive gas containing a metal halide of the formula MXn or MOXn (wherein M=a metal, X=a halogen, and n=an integer) with heating stably develop a high photocatalytic activity with visible light irradiation. The photocatalysts may subsequently be stabilized by contact with water or by heat treatment, and/or promoted by contact with a heteropoly acid and/or an isopoly acid so as to include a metal complex in the titanium oxide. Photocatalysts prepared in this manner exhibit novel ESR features. The present invention also provides methods for preparing these photocatalysts, a photocatalyst dispersion and a photocatalytic coating fluid containing such a photocatalyst, and photocatalytic functional products and methods for their manufacture using the photocatalyst.

Abstract: Titanium oxide-based photocatalysts which contain a metal halide in titanium oxide and which are prepared from titanium oxide and/or its precursor, which may optionally be heat treated, by contact with a reactive gas containing a metal halide of the formula MXn or MOXn (wherein M=a metal, X=a halogen, and n=an integer) with heating stably develop a high photocatalytic activity with visible light irradiation. The photocatalysts may subsequently be stabilized by contact with water or by heat treatment, and/or promoted by contact with a heteropoly acid and/or an isopoly acid so as to include a metal complex in the titanium oxide. Photocatalysts prepared in this manner exhibit novel ESR features. The present invention also provides methods for preparing these photocatalysts, a photocatalyst dispersion and a photocatalytic coating fluid containing such a photocatalyst, and photocatalytic functional products and methods for their manufacture using the photocatalyst.

Abstract: An organic EL display device includes a glass substrate and a flattening film arranged above the glass substrate. A plurality of anodes are arranged on a surface of the flattening film. A plurality of organic EL layers are arranged on a surface of the anodes. The flattening film has irregularities formed in at least a partial surface in a region outside a region where the plurality of organic EL layers are arranged. According to such a structure, an organic EL display device in which remaining of moisture in an insulating film is suppressed can be provided.

Abstract: Titanium oxide-based photocatalysts which contain a metal halide in titanium oxide and which are prepared from titanium oxide and/or its precursor, which may optionally be heat treated, by contact with a reactive gas containing a metal halide of the formula MXn or MOXn (wherein M=a metal, X=a halogen, and n=an integer) with heating stably develop a high photocatalytic activity with visible light irradiation. The photocatalysts may subsequently be stabilized by contact with water or by heat treatment, and/or promoted by contact with a heteropoly acid and/or an isopoly acid so as to include a metal complex in the titanium oxide. Photocatalysts prepared in this manner exhibit novel ESR features. The present invention also provides methods for preparing these photocatalysts, a photocatalyst dispersion and a photocatalytic coating fluid containing such a photocatalyst, and photocatalytic functional products and methods for their manufacture using the photocatalyst.

Abstract: A photocatalytic composite material having a high activity and good durability is produced by coating the surface of a substrate with a continuous film of titanium oxide by vapor deposition from titanium tetrachloride. In the case of a substrate which is a mass of inorganic fibers such as glass cloth, the individual fibers or filaments in the mass are coated with titanium oxide. The vapor deposition is performed by contacting the substrate, such as a mass of inorganic fibers, which has been heated to 100-300° C., with a mixture of distilled pure titanium tetrachloride vapor and water vapor to form a film of a titanium oxide precursor on the surface of the substrate. Then, the substrate is heated at 300-600° C. in an oxidizing atmosphere, resulting in the formation on the substrate surface of a continuous film of a photocatalyst having a high activity and good adhesion to the substrate and comprising crystalline titanium oxide with an average crystallite diameter of 50 nm or smaller.

Abstract: A manufacturing method of a semiconductor device allowing successful filling of an insulating film by HDP-CVD (High Density Plasma-Chemical Vapor Deposition) in a gap or valley between densely placed interconnections is provided. The method includes the steps of forming semiconductor elements on a semiconductor substrate, forming on the semiconductor elements a plurality of interconnections with top protective layers side by side to electrically connect the semiconductor elements, forming a protective insulating film by CVD other than HDP-CVD to cover top and side surfaces of the interconnections and a bottom surface of a gap between the interconnections, and forming an insulating film by HDP-CVD to cover the protective insulating film and to fill in the gap between the interconnections covered with the protective insulating film.

Abstract: An antireflection coating has two-layer structure including lower and upper silicon nitride films (p-SiN films) formed by plasma CVD. For the lower p-SiN film, the real part of its complex index of refraction is set in the range not less than 1.9 nor more than 2.5, the imaginary part is set in the range of not less than 0.9 nor more than 1.7, and the film thickness is set in the range of not less than 20 nm nor more than 60 nm. For the upper p-SiN film, the real part of its complex index of refraction is set in the range not less than 1.7 nor more than 2.4, the imaginary part is set in the range of not less than 0.15 nor more than 0.75, and the film thickness is set in the range of not less than 10 nm nor more than 40 nm.

Abstract: A method of manufacturing a semiconductor device is provided, which prevents a polyimide film from coming unstuck from a film to be subjected to isotropic etching, and further prevents deposits adhered to respective side faces of the films from coming off, during a heat treatment for imidizing the polyimide film. Isotropic etching is performed on a silicon nitride film 4 using, as a mask, a polyimide film 5 having a predetermined pattern formed therein. Next, a heat treatment is carried out to imidize the polyimide film 5 prior to performing anisotropic etching on a silicon oxide film 3. During the heat treatment for imidizing the polyimide film 5, since deposits, which are to be generated by anisotropic etching, are not yet adhered to the respective side faces of the films, the polyimide film 5 does not come unstuck from the silicon nitride film 4. Further, the deposits which are adhered to the respective side face of the films after the heat treatment will not come off.

Abstract: An antireflection coating has two-layer structure including lower and upper silicon nitride films (p-SiN films) formed by plasma CVD. For the lower p-SiN film, the real part of its complex index of refraction is set in the range not less than 1.9 nor more than 2.5, the imaginary part is set in the range of not less than 0.9 nor more than 1.7, and the film thickness is set in the range of not less than 20 nm nor more than 60 nm. For the upper p-SiN film, the real part of its complex index of refraction is set in the range not less than 1.7 nor more than 2.4, the imaginary part is set in the range of not less than 0.15 nor more than 0.75, and the film thickness is set in the range of not less than 10 nm nor more than 40 nm.

Abstract: A protective insulating film in a semiconductor device is formed in a multi-layer structure. A lower layer portion is constituted by an organic-silane-based silicon oxide film formed by a P-CVD process using organic silane and oxygen to improve step coverage. An upper layer portion is constituted by a silane-based silicon oxide film containing excess silicon in an amount greater than that in the stoichiometric composition and formed by a P-CVD process to improve moisture resistance.

Abstract: In a spot welding gun which is made up of a gun main body which is operated for equalization by a driving source, a stationary electrode tip which is immovable relative to the gun main body, and a movable electrode tip which is connected to a pressing source, both electrode tips are pressed to a workpiece with an even force, to thereby perform a high quality spot welding. The driving source is controlled such that the electrode force of the stationary electrode tip, by the driving source, to the workpiece becomes substantially zero. In this manner, there occurs no difference in the electrode forces by both the electrode tips to the workpiece.

Abstract: When a workpiece which is made up by laminating a plurality of plates of different thicknesses is welded by using a spot welding gun having a pair of electrode tips, the electrode force to the workpiece by one of the electrode tips, which is positioned on the side of a thinner plate, is made larger that the electrode force to the workpiece by the other of the electrode tips. The contact pressure on the side of the thinner plate becomes larger with the result that the contact resistance decreases. Therefore, the nugget on the side of the thinner plate becomes smaller than the nugget on the side of the thicker plate.

Abstract: A protective insulating film in a semiconductor device is formed in a multi-layer structure. A lower layer portion is constituted by an organic-silane-based silicon oxide film formed by a P-CVD process using organic silane and oxygen to improve step coverage. An upper layer portion is constituted by a silane-based silicon oxide film containing excess silicon in an amount greater than that in the stoichiometric composition and formed by a P-CVD process to improve moisture resistance.