Abstract: First block (10) and second block (20) are placed on top of each other with insulation sheet (45) interposed therebetween. First adherend surface (12) and second adherend surface (22) are provided on a facing surface of first block (10) and a facing surface of second block (20), respectively. Adhesive (50) is applied to first adherend surface (12) and second adherend surface (22). First block (10) and second block (20) are bonded to each other with adhesive (50).

Abstract: First block (10) includes internal flow path (15). A cooling medium flows inside internal flow path (15). Curved part (56) is provided at a corner between bottom surface (54) and side wall surface (55) of internal flow path (15). Curved part (56) is continuously connected to bottom surface (54) and side wall surface (55) of internal flow path (15) and has a curved shape.

Abstract: A light source apparatus includes: a base part; an anisotropic heat conductive sheet whose thermal conductivity in a surface direction is higher than a thermal conductivity in a thickness direction, the anisotropic heat conductive sheet including a first surface that makes contact with a surface of the base part; a laser diode module disposed at a second surface on a side opposite to the first surface in the anisotropic heat conductive sheet, and configured to emit laser light; and a cooling member disposed at the second surface and separated from the laser diode module, wherein a refrigerant flows inside the cooling member.

Abstract: A semiconductor laser device includes a multilayer substrate, a first conductive layer (submount) that is disposed on the multilayer substrate, a semiconductor laser element located in a first region of the first conductive layer, a first bump located on a surface of the semiconductor laser element, the surface not facing the first conductive layer, a first electrode electrically connected to the first bump, a second conductive layer located in a second region of the first conductive layer, and a second electrode electrically connected to the first conductive layer via the second conductive layer.

Abstract: A semiconductor laser device includes first heat radiator (10) having first flow path (11) and second flow path (12) inside to allow a flow of a refrigerant and second heat radiator (20) put in contact with an upper surface of the first heat radiator. The first flow path and the second flow path are independent of each other. The second heat radiator includes an insulating member that internally has third flow path (23) communicating with first flow path (11). The semiconductor laser device further includes lower electrode block (60) disposed on a portion of an upper surface of the second heat radiator, submount (30) being made of a conductive material and being disposed on a remainder of the upper surface of second heat radiator (20), semiconductor laser element (40) disposed on an upper surface of submount (30), and upper electrode block (61) disposed such that submount (30) and semiconductor laser element (40) are clamped between the upper electrode block and second heat radiator (20).

Abstract: Semiconductor laser device (1) includes lower electrode block (10) that has a first terminal hole and first and second connection holes, upper electrode block (60) that has third connection holes communicating with the respective first connection holes and a second terminal hole, heat sink (110) that has fourth connection holes communicating with the respective second connection holes, and optical component (100) attached to upper electrode block (60). The first and the second connection holes are formed on both side of a recess that is formed to house a submount on which a semiconductor laser element is disposed. Lower electrode block (10) is disposed on heat sink (110). Lower electrode block (10) and upper electrode block (60) are fastened together with first fasteners (90, 90), whereas lower electrode block (10) and heat sink (110) are fastened together with second fasteners (91, 91).

Abstract: Provided is semiconductor laser device 100 including heat dissipation block 60 provided with flow path 66 of a coolant, and first and second semiconductor laser modules 10, 20. Heat dissipation block 60 include lower heat dissipation block 61 formed with groove 65, insulating sealant 62 that has openings 62a, 62b above groove 65 and is disposed on lower heat dissipation block 61, and first and second upper heat dissipation blocks 63a, 63b covering openings 62a, 62b, respectively. First semiconductor laser module 10 is disposed in contact with an upper surface of first upper heat dissipation block 63a, having a positive electrode side facing down, and second semiconductor laser module 20 is disposed in contact with an upper surface of second upper heat dissipation block 63b, having a negative electrode side facing down.

Abstract: A semiconductor laser device includes first heat radiator (10) having first flow path (11) and second flow path (12) inside to allow a flow of a refrigerant and second heat radiator (20) put in contact with an upper surface of the first heat radiator. The first flow path and the second flow path are independent of each other. The second heat radiator includes an insulating member that internally has third flow path (23) communicating with first flow path (11). The semiconductor laser device further includes lower electrode block (60) disposed on a portion of an upper surface of the second heat radiator, submount (30) being made of a conductive material and being disposed on a remainder of the upper surface of second heat radiator (20), semiconductor laser element (40) disposed on an upper surface of submount (30), and upper electrode block (61) disposed such that submount (30) and semiconductor laser element (40) are clamped between the upper electrode block and second heat radiator (20).

Abstract: Semiconductor laser device (1) includes lower electrode block (10) that has a first terminal hole and first and second connection holes, upper electrode block (60) that has third connection holes communicating with the respective first connection holes and a second terminal hole, heat sink (110) that has fourth connection holes communicating with the respective second connection holes, and optical component (100) attached to upper electrode block (60). The first and the second connection holes are formed on both side of a recess that is formed to house a submount on which a semiconductor laser element is disposed. Lower electrode block (10) is disposed on heat sink (110). Lower electrode block (10) and upper electrode block (60) are fastened together with first fasteners (90, 90), whereas lower electrode block (10) and heat sink (110) are fastened together with second fasteners (91, 91).

Abstract: A semiconductor laser device includes a heat sink, a submount, a first electrode, an insulating layer, a semiconductor laser element, a connecting portion, and a second electrode. The submount is conductive and on a first region of an upper surface of the heat sink. The first electrode is conductive and on a second region, different from the first region, of the upper surface of the heat sink. The first electrode is electrically connected either to at least part of a side surface of the submount or to an upper surface of the submount.

Abstract: A semiconductor device according to the present disclosure includes an electrically conductive first electrode block, an electrically conductive submount, an insulating layer, a semiconductor element, an electrically conductive bump, and an electrically conductive second electrode block. The submount is provided in a first region of the upper surface of the first electrode block, and electrically connected to the first electrode block. The semiconductor element is provided on the submount, and has a first electrode electrically connected to the submount. The bump is provided on the upper surface of a second electrode, opposite the first electrode, of the semiconductor element, and electrically connected to the second electrode. A third region of the lower surface of the second electrode block is electrically connected to the bump via an electrically conductive metal layer. An electrically conductive metal sheet is provided between the metal layer and the bump.

Abstract: A semiconductor laser device (1) includes a heat sink (20), a submount (30), a first electrode (60), an insulating layer (70), a semiconductor laser element (40), a connecting portion (50), and a second electrode (61). The submount (30) is conductive and on a first region (R1) of the upper surface of the heat sink (20). The first electrode (60) is conductive and on a second region (R2), different from the first region (R1), of the upper surface of the heat sink (20). The first electrode (60) is electrically connected either to at least part of a side surface of the submount (30) or to the upper surface of the submount (30).

Abstract: A laser module according to the present disclosure includes a laser diode, a first collimating lens, and a beam twister. The laser diode includes a plurality of emitters and emits laser light from each of the plurality of emitters through a light emission surface. The first collimating lens is provided at a first distance from the light emission surface of the laser diode and parallelizes a fast-axis-wise divergence of the laser light. The beam twister is provided at a second distance away from the first collimating lens and turns the laser light approximately 90 degrees. Each of the plurality of emitters has a width of 5 ?m to 120 ?m on the light emission surface. The plurality of emitters have a pitch of 295 ?m to 305 ?m on the light emission surface.

Abstract: A laser module according to the present disclosure includes a laser diode, a first collimating lens, and a beam twister. The laser diode includes a plurality of emitters and emits laser light from each of the plurality of emitters through a light emission surface. The first collimating lens is provided at a first distance from the light emission surface of the laser diode and parallelizes a fast-axis-wise divergence of the laser light. The beam twister is provided at a second distance away from the first collimating lens and turns the laser light approximately 90 degrees. Each of the plurality of emitters has a width of 5 ?m to 120 ?m on the light emission surface. The plurality of emitters have a pitch of 295 ?m to 305 ?m on the light emission surface.

Abstract: A semiconductor device of the present invention includes a circuit board having a number of electrode portions on the front side and the underside, an electronic circuit element such as a semiconductor chip bonded to the electrode portions on the front side of the circuit board and composing an electronic circuit; and a plurality of ball electrodes for external connection, the ball electrodes being formed on the electrode portions on the underside of the circuit board. Of the electrode portions on the underside of the circuit board, an electrode portion on the outer periphery is formed larger than an electrode portion on the inner periphery. The plurality of ball electrodes are solder balls heated and melted on the electrode portions on the underside of the board so as to form an alloy on the interfaces, the solder balls containing tin and silver but not containing lead.

Abstract: A semiconductor device includes a substrate having external connection terminals, and a semiconductor chip mounted over a semiconductor-chip mounting portion of the substrate. The external connection terminals are formed by sequentially forming an electroless nickel plating layer, an electroless gold plating layer, and an electrolytic gold plating layer on a terminal portion formed on a surface of the substrate.

Abstract: The semiconductor laser device of the present invention has a conductive first heatsink member, a conductive first adhesive, and a semiconductor laser element. The first adhesive is disposed on the first heatsink member, and the semiconductor laser element is disposed on the first adhesive. The first adhesive reaches an upper part of the side surface of the first heatsink member under the laser emission surface for laser emission of the semiconductor laser element. The structure further improves heat dissipation of the semiconductor laser element; at the same time, it is effective in obtaining laser light from the semiconductor laser element.

Abstract: The semiconductor laser device of the present invention has a conductive first heatsink member, a conductive first adhesive, and a semiconductor laser element. The first adhesive is disposed on the first heatsink member, and the semiconductor laser element is disposed on the first adhesive. The first adhesive reaches an upper part of the side surface of the first heatsink member under the laser emission surface for laser emission of the semiconductor laser element. The structure further improves heat dissipation of the semiconductor laser element; at the same time, it is effective in obtaining laser light from the semiconductor laser element.

Abstract: A semiconductor device includes a first semiconductor device and second semiconductor device stacked on the first semiconductor device. The first semiconductor device includes a first interconnect substrate, a first semiconductor element provided on an upper surface of the first interconnect substrate, a first electrode provided on the upper surface of the first interconnect substrate, and an insulating layer having an opening portion through which part of the first electrode is exposed. The second semiconductor device includes a second interconnect substrate, a second semiconductor element provided on an upper surface of the second interconnect substrate, a second electrode provided on a lower surface of the second interconnect substrate, and an inter-device connection terminal connected to the second electrode. Part of the first electrode exposed through the opening portion has a smaller area than an area of the opening portion.

Abstract: A semiconductor device includes a first semiconductor device and second semiconductor device stacked on the first semiconductor device. The first semiconductor device includes a first interconnect substrate, a first semiconductor element provided on an upper surface of the first interconnect substrate, a first electrode provided on the upper surface of the first interconnect substrate, and an insulating layer having an opening portion through which part of the first electrode is exposed. The second semiconductor device includes a second interconnect substrate, a second semiconductor element provided on an upper surface of the second interconnect substrate, a second electrode provided on a lower surface of the second interconnect substrate, and an inter-device connection terminal connected to the second electrode. Part of the first electrode exposed through the opening portion has a smaller area than an area of the opening portion.