Abstract: A film forming method according to an aspect of the present disclosure is a film forming method of embedding a film in a recess formed in a surface of a substrate, and includes a first processing including (a) adsorbing a raw material gas into the recess, (b) forming a film by reacting a reaction gas with the raw material gas, and (c) activating a plasma generation gas including a hydrogen gas and a noble gas by plasma and supplying the gas into the recess to shrink the film. A plurality of cycles each including (a) and (b) are executed, and at least a part of the plurality of cycles includes (c).

Abstract: A film forming method of forming a metal-containing aluminum oxide layer on a substrate having at least a metal layer on a surface thereof includes: a first operation of forming an aluminum oxide layer on the substrate with an aluminum-containing precursor and an oxidant; and a second operation of forming a metal oxide layer on the substrate with the oxidant and a precursor including a first metal other than aluminum. Assuming that a dielectric constant of only an oxide of the first metal is ?1 and a molar ratio of the first metal to all metals in the metal-containing aluminum oxide layer is X, the formed metal-containing aluminum oxide layer satisfies a following condition (1) or (2): X>? and ?1<25×X/(3X?1) . . . (1); and X??. . . (2).

Abstract: Provided is a sensing system that performs set control with high sensing accuracy. The sensing system that outputs an object signal includes a solid-state imaging device that senses a first physical target from an object and a second physical target different from the first physical target, and an arithmetic operation unit that calculates an object signal using a first signal from the first physical target and a second signal from the second physical target. The arithmetic operation unit calculates an object signal using a reference signal from a device mounted with the sensing system.

Abstract: A film-forming method of forming an oxide film on a substrate inside a chamber, includes: adsorbing a raw material gas for forming the oxide film onto the substrate by supplying the raw material gas into the chamber; and oxidizing the raw material gas adsorbed onto the substrate with oxygen-containing radicals produced by supplying a hydrogen gas and an oxygen gas into the chamber while preheating the hydrogen gas and the oxygen gas, wherein the adsorbing the raw material gas and the oxidizing the raw material gas are repeated, and when supplying at least one of the hydrogen gas and the oxygen gas, a supply partial pressure of the at least one of the hydrogen gas and the oxygen gas is changed to be relatively high at an initial supply stage and to gradually decrease over time.

Abstract: Provided is a sensing system that performs set control with high sensing accuracy. The sensing system that outputs an object signal includes a solid-state imaging device that senses a first physical target from an object and a second physical target different from the first physical target, and an arithmetic operation unit that calculates an object signal using a first signal from the first physical target and a second signal from the second physical target. The arithmetic operation unit calculates an object signal using a reference signal from a device mounted with the sensing system.

Abstract: A microwave processing apparatus for processing a substrate by irradiating a microwave to the substrate includes: a processing container configured to accommodate a substrate; and a microwave introducing device configured to have a microwave source that generates a microwave and introduce the microwave into a microwave radiation space within the processing container. The microwave introducing device includes: a waveguide configured to form a transmission path to guide the microwave into the processing container; a first microwave transmission window interposed between the transmission path and the microwave radiation space; and a second microwave transmission window installed to be closer to the microwave source than the first microwave transmission window, and configured to change a traveling direction of the microwave.

Abstract: A heating apparatus includes a heat source; a holder having a contact portion configured to support an object to be processed; a rotation driving unit configured to rotate the holder; a luminous body including a fluorescent material or a phosphorescent material provided in the contact portion; and a fluorescent thermometer configured to measure a temperature of the object based on light from the luminous body. The fluorescent thermometer includes: a light source which is separated from the holder and configured to generate excitation light for exciting the luminous body; light receivers separated from the holder, each of the light receivers having a photodetector configured to receive the light from the luminous body; and a processing unit configured to calculate the temperature based on intensity of the light received by the photodetector of each of the light receivers.

Abstract: A substrate processing apparatus and a substrate processing method can perform a plasma process using a microwave and a heat treatment through irradiation of the microwave on a substrate. A substrate processing apparatus 1 includes a processing vessel 2; a microwave introduction device 3 configured to introduce a microwave into the processing vessel 2; a mounting table 4 configured to support a wafer W thereon within the processing vessel 2. The mounting table 4 is made of a microwave-transmissive material. The processing vessel 2 has therein a plasma processing space S1 in which a plasma process is performed on the wafer W; and a microwave introduction space S2 into which the microwave is directly introduced. The microwave having transmitted the mounting table 4 is first used to heat the wafer W before it reaches the plasma processing space S1 to be consumed by plasma.

Abstract: A microwave heating apparatus includes a processing chamber having a top wall, a bottom wall and a sidewall, and configured to accommodate an object to be processed; a microwave introducing unit configured to generate a microwave for heating the object and introduce the microwave into the processing chamber; a plurality of supporting members configured to make contact with the object and support the object in the processing chamber. The microwave heating apparatus further includes a dielectric member provided between the object supported by the supporting members and the bottom wall while being apart from the object.

Abstract: A microwave heating apparatus includes a processing chamber for accommodating a target, a support device for supporting the target in the processing chamber and a microwave introducing device for generating microwaves to introduce them into the processing chamber. The processing chamber further includes a top wall having a plurality of microwave introduction ports to introduce the microwaves generated in the microwave introducing device into the processing chamber. Each of the microwave introduction ports has a rectangular shape having long sides and short sides parallel to inner wall surfaces of four sidewalls of the processing chamber, and the support device includes a support member to support the target and a rotating mechanism for rotating the supported target.

Abstract: A microwave heating apparatus includes a phase control unit configured to change a phase of a standing wave of microwave introduced into the process chamber by the microwave introduction unit. The phase control unit includes a recessed portion with respect to an inner surface of the bottom wall. The phase control unit is formed of a bottom portion and a fixing plate installed at a lower surface of the bottom portion from the outer side of the process chamber. The phase of the standing wave in the process chamber is changed by the incidence and reflection of the microwave in the recessed portion of the phase control unit surrounded by metallic wall.

Abstract: A microwave heating apparatus is provided to perform heat treatment on a substrate to be processed by irradiating a microwave to the substrate in a processing chamber. The microwave heating apparatus includes a supporting table configured to support the substrate in the processing chamber, a microwave introducing unit configured to introduce the microwave into the processing chamber, a coolant channel formed in the supporting table, and a coolant supply source configured to supply a coolant to the coolant channel. At least a surface of the supporting table which supports the substrate is made of a material in which a product of a relative dielectric constant and a dielectric loss angle is smaller than 0.005, and the coolant supplied from the coolant supply source is liquid having no electrical polarity.

Abstract: Disclosed are a microwave heat treatment apparatus and a processing method in which a purging process time may be reduced while suppressing a use amount of a purging gas with simple facilities. An internal space of the processing container 2 of the microwave heat treatment apparatus 1 is at least divided, by a partition 7 and a processing container 2, into a first chamber S1 in which a wafer W is accommodated and a second chamber S2 into which the purging gas is directly introduced by the gas introducing unit 26. The purging gas is introduced from the gas introducing unit 26 into the second chamber S2 to diffuse the purging gas from the second chamber S2 into the first chamber S1 through a plurality of gas holes 7a of the partition 7 to purge atmosphere of the first chamber S1.

Abstract: A method for cleaning a microwave processing apparatus including a processing chamber for accommodating therein an object to be processed, a microwave introducing unit for introducing microwaves into the chamber, and a gas introducing unit for introducing a gas into the processing chamber is provided. The method includes loading an object for cleaning into the processing chamber, introducing a gas into the processing chamber, introducing microwaves into the processing chamber, and unloading the object from the processing chamber.

Abstract: A microwave processing method for processing an object in a processing chamber is probided by using microwaves. The method includes loading the object into the processing chamber in a state where a pressure in the processing chamber is higher than that of an outside environment; discharging O2 gas from the processing chamber by introducing N2 gas into the processing chamber; performing heat treatment on the object by introducing microwaves into the processing chamber from which the O2 gas has been discharged; and cooling the object in a state where the pressure in the chamber is higher than that of the outside environment.

Abstract: In a method for processing an object by heating the object, microwaves are irradiated to the object. In the microwave irradiation, the object is forcedly cooled.

Abstract: A disclosed substrate processing method in a single wafer substrate processing device including a first process position for introducing nitrogen atoms to a high-dielectric film and a second process position for performing heat treatment on the high-dielectric film includes: successively conveying plural substrates to be processed to the first process position and the second process position one by one; and successively performing the introduction of nitrogen atoms and the heat treatment on the high-dielectric film on the substrates to be processed, wherein the treatment on the substrate to be processed is started within 30 seconds at the second process position after the process at the first position.

Abstract: A method of forming a metal silicate film on a silicon substrate in a processing container is disclosed that includes the steps of (a) forming a base oxide film on the silicon substrate by feeding an oxidation gas into the processing container; and (b) forming the metal silicate film on the base oxide film by continuing to feed the oxidation gas and by feeding a first gaseous phase material formed of an amidic organic hafnium compound and a second gaseous phase material formed of a silicon-containing material into the processing container.

Abstract: A disclosed substrate processing method in a single wafer substrate processing device including a first process position for introducing nitrogen atoms to a high-dielectric film and a second process position for performing heat treatment on the high-dielectric film includes: successively conveying plural substrates to be processed to the first process position and the second process position one by one; and successively performing the introduction of nitrogen atoms and the heat treatment on the high-dielectric film on the substrates to be processed, wherein the treatment on the substrate to be processed is started within 30 seconds at the second process position after the process at the first position.

Abstract: A method for forming a high-K dielectric film on a silicon substrate includes the steps of processing a surface of the silicon substrate with a diluted hydrofluoric acid, conducting nucleation process of HfN, after the step of processing with the diluted hydrofluoric acid, by supplying a metal organic source containing Hf and nitrogen to the surface of said silicon substrate, and forming an Hf silicate film by a CVD process, after the step of nucleation, by supplying a metal organic source containing Hf and a metal organic source containing Si to the surface of the silicon substrate.