Abstract: A method for manufacturing a piezoelectric thin film component wherein a thin titanium film is deposited on a bottom metal layer such that parts of the thin titanium film remain on crystal grain boundaries of the bottom metal layer and form seed crystals. A polycrystalline piezoelectric thin film is formed on the bottom metal layer so that a pervoskite crystalline lattice is grown from the seed crystals.

Abstract: A process for producing a laminated ink-jet recording head including the steps of forming a titanium layer across a surface of a diaphragm, and forming a layer of a piezoelectric material on the titanium layer by a hydrothermal method.

Abstract: [Object]

Abstract: A method of manufacturing a piezoelectric thin film component utilizing seed crystals, such as crystals of titanium, as a crystal source on a bottom electrode. Crystals of piezoelectric material are grown using the seed crystals as a nucleus, wherein a crystal grain size and orientation of the piezoelectric material formed on the crystal source may be of a different orientation and crystal grain size from that of the bottom electrode. The piezoelectric thin film formed by this operation is of a polycrystalline structure. The formation of the piezoelectric thin film by this method includes a sol-gel film formation process utilizing a sol composition having an high molecular organic compound which creates a porous gel thin film. Further, the formation of the piezoelectric thin film by this method may include a metal organic decomposition process utilizing a hydrolysis inhibitor in the sol solution.

Abstract: A method to produce a piezoelectric device having one or more piezoelectric thin film layers and two or more electrode layers. The method comprises forming an amorphous electrode layer, forming a least one amorphous piezoelectric thin film layer over the amorphous electrode layer and forming a second electrode layer over at least one piezoelectric thin film layer. Then, the amorphous piezoelectric thin film layers and the amorphous electrode layers are crystallized by hydrothermal synthesis. The hydrothermal synthesis is not performed until all of the amorphous layers are deposited.

Abstract: A method for manufacturing a piezoelectric film element with increased durability is disclosed. The method of manufacturing the piezoelectric film element includes the steps of thermally treating a first film, and thermally treating a second film formed over the first film; whereby a dislocation layer is formed in the second film in a vicinity of an interface between the first film and the second film. Additionally, an ink-jet recording head including a pressure room substrate, a pressure room, and a piezoelectric film element is disclosed. The method of manufacturing the ink-jet recording head includes the steps of forming a pressure room in a pressure room substrate and manufacturing a piezoelectric film element at a position which makes it possible to press the pressure room.

Abstract: Providing a mechanism which can eliminate an influence of residual strain in a piezoelectric thin film, having excellent piezoelectric strain characteristics. No or few foreign substances exist or an abundance of foreign substances is low at grain boundaries, which are boundaries between crystal grains of the piezoelectric thin film, even after performing polarization processing (poling) on the piezoelectric thin film component. The width of the grain boundary is 5 nm or less. The crystal grain boundary is a discontinuous layer which does not continue the orientation of adjacent crystal grains.

Abstract: It is an object of this invention to provide a piezoelectric film element which has structural characteristics capable of preventing the generation of cracks in the steps of manufacturing the piezoelectric film element and of increasing the thickness of a piezoelectric film. The piezoelectric film element of this invention comprises a dislocation layer in the piezoelectric film. This “dislocation layer” is the layer of which atoms in crystals are partly defective, which is caused by lattice defects. In the step of forming the piezoelectric film, when a sol which is a piezoelectric film precursor is turned into a gel by means of thermal treatment and when crystal grains of the sol grow, a lattice arrangement over the surfaces of the crystal grains is disturbed moderately. Accordingly, when the piezoelectric film is formed over the gel, the dislocation layer can be formed in the piezoelectric film.

Abstract: A process for the formation of an oxide ceramic thin film, which permits the control of film oxygen content and can give a film reduced in oxygen deficiency. The process is characterized in that the step of forming an amorphous thin film, the step of heating the thin film to crystallize it or the step of heat-treating the crystallized film is conducted in a moisture-containing atmosphere.

Abstract: The present invention is to produce a piezoelectric device with which the number of production processes can be reduced and reliability can be improved. A piezoelectric device (40) comprises one or more piezoelectric thin film layers (43) and 2 or more electrode layers (42 and 44). Mixed layers (512, 523, and 534) where the components of adjacent layers are mixed are formed between the respective layers.

Abstract: A piezoelectric device having a crystallized piezoelectric film between a lower and an upper electrode, wherein the crystal axis of the columnar crystal grain with the (001) orientation in the crystal forming the piezoelectric film is inclined by a predetermined angle relative to the normal direction of the lower electrode face, thereby improving the electric/mechanic converting function under low voltage conditions.

Abstract: The present invention is to produce a piezoelectric device with which the number of production processes can be reduced and reliability can be improved. A piezoelectric device (40) comprises one or more piezoelectric thin film layers (43) and 2 or more electrode layers (42 and 44). Mixed layers (512, 523, and 534) where the components of adjacent layers are mixed are formed between the respective layers.

Abstract: Providing a mechanism which can eliminate an influence of residual strain in a piezoelectric thin film, having excellent piezoelectric strain characteristics.

Abstract: A process for producing a laminated ink-jet recording head including the steps of forming a titanium layer across a surface of a diaphragm, and forming a layer of a piezoelectric material on the titanium layer by a hydrothermal method.

Abstract: A process for producing a laminated ink-jet recording head including the steps of forming a titanium layer across a surface of a diaphragm, and forming a layer of a piezoelectric material on the titanium layer by a hydrothermal method.

Abstract: A piezoelectric film element with structural characteristics such that cracks are not generated in the manufacturing of the piezoelectric film and a thicker piezoelectric film is possible without such cracks. The piezoelectric film element includes a dislocation layer, that is, a layer in which atoms in the crystals are partly defective, which is caused by lattice defects. In the process for forming the piezoelectric film, when a sol is turned into a gel by thermal treatment and when crystal grains of the sol grow, a lattice arrangement over the surfaces of the crystal grains is disturbed moderately. Accordingly, when the piezoelectric film is formed over the gel, the dislocation layer is formed in the piezoelectric film.

Abstract: Providing a mechanism which can eliminate an influence of residual strain in a piezoelectric thin film, having excellent piezoelectric strain characteristics. No or few foreign substances exist or an abundance of foreign substances is low at grain boundaries, which are boundaries between crystal grains of the piezoelectric thin film, even after performing polarization processing (poling) on the piezoelectric thin film component. The width of the grain boundary is 5 nm or less. The crystal grain boundary is a discontinuous layer which does not continue the orientation of adjacent crystal grains.

Abstract: A laminated ink-jet recording head is provided that has a strong joint between the diaphragm and the piezoelectric vibrating element and which can be driven on low voltage. The recording head is of such a design that a lower electrode is provided on the diaphragm in at lest a region that corresponds to said pressure generating chamber, the lower electrode being overlaid with the piezoelectric vibrating element formed by a hydrothermal method, said piezoelectric vibrating element in turn being overlaid with an upper electrode and having a film thickness of not less than 1 .mu.m but not more than 10 .mu.m. The invention further provides a process for producing this recording head, as well as an apparatus such as a printer that is equipped with this recording head.

Abstract: A piezoelectric thin film which has good properties, for example, a high dielectric constant and a high piezoelectric strain constant is disclosed. A method for producing a piezoelectric film, which causes no crack during annealing, is also disclosed. The piezoelectric thin film has a thickness in the range of from 0.5 to 20 .mu.m, comprises crystal grains having an average grain diameter of 0.005 to 0.2 .mu.m, and is free from any multilayer structure in its cross section.

Abstract: A piezoelectric thin-film device includes: a substrate; and a piezoelectric thin film formed on the substrate, wherein a thickness of the piezoelectric thin film is 1 to 10 .mu.m, a crystal grain size of the piezoelectric thin film is 0.05 to 1 .mu.m, and a surface roughness (Rmax) of the piezoelectric thin film is no more than 1 .mu.m.