Abstract: A overheat protection circuit is formed on the same semiconductor substrate as a power MOS FET is formed on.

Abstract: A overheat protection circuit is formed on the same semiconductor substrate as a power MOS FET is formed on.

Abstract: The object of the present invention is to provide a DC/DC converter and a method for controlling the DC/DC converter whereby losses under light loads are reduced.

Abstract: In a semiconductor switch, a voltage detection circuit is provided so as to be in parallel with a first switching element for turning on/off a power supply to a load, in which a voltage detection portion for detecting a drain voltage of the first switching element by dividing a voltage upon a resistance ratio or the like and a second switching element are connected in series to each other. The second switching element is turned on/off in accordance with ON/OFF of the first switching element. Accordingly, detection of a drain voltage is performed normally when the first switching element is in an ON state. When the first switching element is in an OFF state, a leakage current can be reduced by the second switching element.

Abstract: A load driving device capable of preventing thermal destruction even when a load short-circuit or an overcurrent occurs, thereby having improved reliability, is provided. A load driving device, in which a power switch element for driving a load and a circuit for controlling the power switch element according to a signal VIN supplied from the outside are formed on one chip, is provided with an OFF-time delaying circuit for delaying an OFF-time transition of a level of an input signal at which the power switch element makes the transition from an ON state to an OFF state, according to a result of detection of a current flowing through the load and the level of the input signal to the power switch element.

Abstract: A load driving device capable of preventing thermal destruction even when a load short-circuit or an overcurrent occurs, thereby having improved reliability, is provided. A load driving device 1, in which a power switch element 2 for driving a load 17 and a circuit for controlling the power switch element according to a signal VIN supplied from the outside are formed on one chip, is provided with an OFF-time delaying circuit 3 for delaying an OFF-time transition of a level of an input signal at which the power switch element makes the transition from an ON state to an OFF state, according to a result of detection of a current flowing through the load and the level of the input signal to the power switch element.

Abstract: In a semiconductor switch, a voltage detection circuit is provided so as to be in parallel with a first switching element for turning on/off a power supply to a load, in which a voltage detection portion for detecting a drain voltage of the first switching element by dividing a voltage upon a resistance ratio or the like and a second switching element are connected in series to each other. The second switching element is turned on/off in accordance with ON/OFF of the first switching element. Accordingly, detection of a drain voltage is performed normally when the first switching element is in an ON state. When the first switching element is in an OFF state, a leakage current can be reduced by the second switching element.

Abstract: A lead frame used for a resin-sealed semiconductor device includes a die-mount portion on which a semiconductor chip rests; and a plurality of leads arranged along a common portion of the lead frame. The plurality of leads include at least one adjusting lead, and the adjusting lead has a length that is less than the others of the plurality of leads such that a tip of the adjusting lead is sufficiently proximate to an outer peripheral surface of a resin-seal body to prevent resin flash during a formation of the semiconductor device and to allow the adjusting lead to be removed after the resin-seal body is formed over a portion of the lead frame.

Abstract: A lead frame used for a resin-sealed semiconductor device includes a die-mount portion on which a semiconductor chip rests; and a plurality of leads arranged along a common portion of the lead frame. The plurality of leads include at least one adjusting lead, and the adjusting lead has a length that is less than the others of the plurality of leads such that a tip of the adjusting lead is sufficiently proximate to an outer peripheral surface of a resin-seal body to prevent resin flash during a formation of the semiconductor device and to allow the adjusting lead to be removed after the resin-seal body is formed over a portion of the lead frame.

Abstract: A PWM inverter output circuit enabling circuit integration, having a fast response characteristic, and unaffected by dv/dt transients is provided. A predrive circuit 17 drives a power circuit 11 comprising first and second power elements P1 and P2 by controlling the gate and source potential of the power elements P1 and P2 based on a stored control state. The control state is detected from a logic signal output from an input signal processor 13, which converts a command signal instructing turning on and off the power elements P1 and P2 to predetermined logic signals. Operating power is drawn from a main dc power source V1, a control power source V2, and a power supply capacitor C1 that is charged using an output voltage from the control power source V2. The gates and sources of the power elements P1 and P2 are connected together.