Abstract: The present invention provides a cationic electrodeposition coating composition comprising: a specific amino group-containing modified epoxy resin (A); a blocked polyisocyanate curing agent (B); a water-soluble zirconium compound (C); and sulfamic acid, wherein the water-soluble zirconium compound (C) is present in an amount of 10 to 10,000 ppm, calculated as the mass of the elemental zirconium, relative to the mass of the cationic electrodeposition coating composition.

Abstract: The present invention provides a cationic electrodeposition coating composition comprising: a specific amino group-containing modified epoxy resin (A); a blocked polyisocyanate curing agent (B); a water-soluble zirconium compound (C); and sulfamic acid, wherein the water-soluble zirconium compound (C) is present in an amount of 10 to 10,000 ppm, calculated as the mass of the elemental zirconium, relative to the mass of the cationic electrodeposition coating composition.

Abstract: In manufacturing thinned semiconductor chips by grinding a semiconductor wafer supported on a rigid support substrate, in order to remove the semiconductor wafer or semiconductor chips from the support substrate without damage to the semiconductor wafer or semiconductor chips, a semiconductor wafer at its surface is bonded on a light-transmissive support substrate through an adhesive layer having an adhesion force that is reduced upon exposure to light radiation, thereby exposing the back surface of the semiconductor wafer. A tape is bonded to the backside of the semiconductor wafer integrated with the support substrate after grinding, wherein the tape is supported at the periphery. Before or after bonding of the tape, light radiation is applied to the adhesive layer at a side close to the support substrate to reduce the adhesion force in the adhesion layer.

Abstract: In manufacturing thinned semiconductor chips by grinding a semiconductor wafer supported on a rigid support substrate, in order to remove semiconductor wafer or semiconductor chips from the support substrate without damage to the semiconductor wafer or semiconductor chips, a semiconductor wafer at its surface is bonded on a light-transmissive support substrate through an adhesive layer having an adhesion force to reduce upon exposed to light radiation, thereby exposing the back surface of the semiconductor wafer. A tape is bonded to the backside of the semiconductor wafer integrated with the support substrate of after grinding, wherein the tape is supported at the periphery. Before or after bonding of the tape, light radiation is applied to the adhesive layer at a side close to the support substrate to reduce the adhesion force in the adhesion layer.

Abstract: A printing ink resist composition which contains a phenol resin as the main resin component and further contains a thickening agent; a method of forming a resist film having a desired pattern which comprises conducting a screen printing, by using this resist composition, on the surface of a substrate having a metal layer on its surface; and a method of producing a substrate having a metal layer pattern which further comprises a step of etching the metal layer at portions on which said resist film is not formed and then removing the resist film; are disclosed.