Abstract: A substrate processing method for use in a substrate processing apparatus having a stocker therein which stores a multiplicity of dummy substrates; a reaction chamber for producing semiconductor products; and a transferring unit for transferring into the reaction chamber a process substrate and the dummy substrate stored in the stocker in order to form a film on the process substrate, the method includes transferring one dummy substrate selected among the dummy substrates stored in the stocker to the reaction chamber without being out of the apparatus; and introducing a cleaning gas into the reaction chamber to clean said one dummy substrate within the reaction chamber.

Abstract: A substrate processing method for use in a substrate processing apparatus having a stocker therein which stores a multiplicity of dummy substrates; a reaction chamber for producing semiconductor products; and a transferring unit for transferring into the reaction chamber a process substrate and the dummy substrate stored in the stocker in order to form a film on the process substrate, the method includes transferring one dummy substrate selected among the dummy substrates stored in the stocker to the reaction chamber without being out of the apparatus; and introducing a cleaning gas into the reaction chamber to clean said one dummy substrate within the reaction chamber.

Abstract: A substrate processing apparatus includes a reaction chamber for simultaneously processing a plurality of process substrates, a boat for loading the process substrates into the reaction chamber, and a stocker for storing a multiple number of dummy substrates, at least a portion of the dummy substrates being loaded into the reaction chamber together with the process substrates through the use of the boat. A substrate cleaning process is carried out by loading dummy substrates to be cleaned into the reaction chamber through the use of the boat and introducing a cleaning gas into the reaction chamber.

Abstract: A substrate processing apparatus includes a reaction chamber for simultaneously processing a plurality of process substrates, a boat for loading the process substrates into the reaction chamber, and a stocker for storing a multiple number of dummy substrates, at least a portion of the dummy substrates being loaded into the reaction chamber together with the process substrates through the use of the boat. A substrate cleaning process is carried out by loading dummy substrates to be cleaned into the reaction chamber through the use of the boat and introducing a cleaning gas into the reaction chamber.

Abstract: A substrate processing apparatus includes a reaction chamber for simultaneously processing a plurality of process substrates, a boat for loading the process substrates into the reaction chamber, and a stocker for storing a multiple number of dummy substrates, at least a portion of the dummy substrates being loaded into the reaction chamber together with the process substrates through the use of the boat. A substrate cleaning process is carried out by loading dummy substrates to be cleaned into the reaction chamber through the use of the boat and introducing a cleaning gas into the reaction chamber.

Abstract: A substrate processing apparatus and a method for manufacturing a semiconductor device can supply the vapor of the raw material to the substrate without fail.

Abstract: A substrate processing apparatus includes a reaction chamber for simultaneously processing a plurality of process substrates, a boat for loading the process substrates into the reaction chamber, and a stocker for storing a multiple number of dummy substrates, at least a portion of the dummy substrates being loaded into the reaction chamber together with the process substrates through the use of the boat. A substrate cleaning process is carried out by loading dummy substrates to be cleaned into the reaction chamber through the use of the boat and introducing a cleaning gas into the reaction chamber.

Abstract: A substrate processing apparatus includes a first holder made of silicon carbide or silicon and a second holder made of quartz. Each of the first and the second holder is of a ring shape and the second ring shaped holder is mounted on the first holder. The second holder is used to mount a substrate thereon while the substrate is being processed.

Abstract: A substrate processing apparatus and a method for manufacturing a semiconductor device can resolve the problems that semiconductor film by-products are incorporated into a boat rotation mechanism so as to allow the mechanism portion to be locked, whereby a high quality semiconductor film can be generated with stability for a long period of time.

Abstract: A substrate processing apparatus that includes a preliminary chamber and a substrate transferring apparatus. The substrate transferring apparatus is disposed in the preliminary chamber for transferring substrate or substrates in and out of a cassette which accommodates the substrate or substrates. The cassette is allowed to be inserted into the preliminary chamber through a lower wall of the preliminary chamber from below.

Abstract: An apparatus for selectively implementing a depressurized or an atmospheric hydrogen annealing process comprises a reaction chamber, a hydrogen gas introduction line for feeding hydrogen gas into the reaction chamber and an atmospheric exhaust line and a depressurized exhaust line, which are connected to the reaction chamber. By selectively switching the atmospheric exhaust line and the depressurized exhaust line, the depressurized hydrogen annealing process and the atmospheric annealing process are selectively implemented. A device for performing deoxidization process or a device for removing impurities may be further included.

Abstract: A substrate processing apparatus includes a first holder made of silicon carbide or silicon and a second holder made of quartz. Each of the first and the second holder is of a ring shape and the second ring shaped holder is mounted on the first holder. The second holder is used to mount a substrate thereon while the substrate is being processed.

Abstract: A substrate processing apparatus and a method for manufacturing a semiconductor device can supply the vapor of the raw material to the substrate without fail.

Abstract: A substrate processing apparatus and a method for manufacturing a semiconductor device can resolve the problems that semiconductor film by-products are incorporated into a boat rotation mechanism so as to allow the mechanism portion to be locked, whereby a high quality semiconductor film can be generated with stability for a long period of time.

Abstract: A substrate processing apparatus, wherein a flowing direction of a gas flow which has flown upwardly and ascended in an inner tube (3A) is changed at an upper portion of the inner tube (3A) so as to be flown between the inner tube (3A) and an outer tube (2A) and exhausted outwardly, comprising: an inner tube cap 11 suited for covering the upper portion of the inner tube (3A); gas passages provided between the upper portion of the inner tube (3A) and the inner tube cap (11); and the inner tube cap (11) having a central portion protruded into an upstream of the gas flow. According to the substrate processing apparatus thus configured and a method of manufacturing a semiconductor device using the substrate processing apparatus, it is possible to prevent a reaction product from being deposited on a ceiling portion of an outer tube as well as being deposited as particles on a processing or processed substrate or substrates disposed in the inner tube.

Abstract: An apparatus and a method for manufacturing a semiconductor device can prevent formation of reaction by-products at a cooled metal flange, and can allow a maintenance period of an apparatus to become longer. A vertical CVD apparatus as a substrate processing apparatus for processing substrates W at a prescribed processing temperature comprises an outer reaction quartz tube 11 and an inner reaction quartz tube 12 provided concentrically. The outer tube 11 is vertically disposed via an O-ring 7 on an upper end of a metal flange 20. The inner tube 12 is vertically disposed on an inner wall of the flange 20. The O-ring 7 is cooled via the flange 20. A lower opening 16 of the flange 20 is covered with a furnace opening cover 32. The flange 20 is provided with a gas introducing nozzle 21 to allow a reaction gas to be introduced into the inner tube 12.

Abstract: A substrate processing apparatus, wherein a flowing direction of a gas flow which has flown upwardly and ascended in an inner tube (3A) is changed at an upper portion of the inner tube (3A) so as to be flown between the inner tube (3A) and an outer tube (2A) and exhausted outwardly, comprising: an inner tube cap 11 suited for covering the upper portion of the inner tube (3A); gas passages provided between the upper portion of the inner tube (3A) and the inner tube cap (11); and the inner tube cap (11) having a central portion protruded into an upstream of the gas flow. According to the substrate processing apparatus thus configured and a method of manufacturing a semiconductor device using the substrate processing apparatus, it is possible to prevent a reaction product from being deposited on a ceiling portion of an outer tube as well as being deposited as particles on a processing or processed substrate or substrates disposed in the inner tube.

Abstract: An apparatus and a method for manufacturing a semiconductor device can prevent formation of reaction by-products at a cooled metal flange, and can allow a maintenance period of an apparatus to become longer. A vertical CVD apparatus as a substrate processing apparatus for processing substrates W at a prescribed processing temperature comprises an outer reaction quartz tube 11 and an inner reaction quartz tube 12 provided concentrically. The outer tube 11 is vertically disposed via an O-ring 7 on an upper end of a metal flange 20. The inner tube 12 is vertically disposed on an inner wall of the flange 20. The O-ring 7 is cooled via the flange 20. A lower opening 16 of the flange 20 is covered with a furnace opening cover 32. The flange 20 is provided with a gas introducing nozzle 21 to allow a reaction gas to be introduced into the inner tube 12.

Abstract: An substrate processing apparatus and a method for manufacturing a semiconductor device can effectively prevent a reaction gas from flowing into a rotation mechanism form a reaction chamber. A vertical CVD apparatus is for processing wafers while rotating the wafers by a rotation shaft 41 of a rotation mechanism 40 during introducing a reaction gas into a reaction chamber 25 as well as exhausting the reaction gas. Between the rotation shaft 41 of this apparatus and a furnace opening cover 32 being a non-rotational portion of the reaction chamber 25 into which the shaft 41 is inserted, there is provided a sealing portion 50 with a labyrinth structure comprising a rotor 51 and a stator 52 so as to prevent a reaction gas from flowing into the mechanism 40 from the reaction chamber 25 via a clearance 54.

Abstract: A wafer may be protected from being contaminated by contaminants and cooled at the same time. In a multi chamber CVD equipment, while a wafer arm 55 of a transfer robot transfers a high-temperature wafer 1 from a CVD chamber to a cooling chamber, the wafer 1 is covered with a cooling and guarding plate 60. The cooling and guarding plate 60 has an abutting ring 61 abutted along the perimeter of an upper surface of the wafer 1, a support ring 62 with the shape of a cylinder having a small height installed on the abutting ring 61, a covering plate 63 with the shape of a disc formed on the support ring 62, a plurality of radiating fins 64 and a set of handles 65 projected along both sides of the plurality of radiating fins 64, wherein the cooling and guarding plate arm 56 is inserted underneath the handles 65.