Abstract: According to the present disclosure, an electrode having an electrode mixture layer with a desired film thickness can be stably produced. A producing method disclosed herein includes detecting the surface position of a mixture coated film by a first sensor; detecting the surface position of a second roll by a second sensor; detecting the film thickness of the mixture coated film based on detection results of the first sensor and the second sensor; and adjusting a relatively rotation speed of a third roll based on the film thickness. And, the detected positions of the first sensor and the second sensor in a circumferential direction of the second roll are substantially identical. Due to this method, the change in the film thickness of the electrode mixed layer of produced electrode can be suppressed.

Abstract: According to the present disclosure, an electrode having an electrode mixture layer with a desired film thickness can be stably produced. A producing method disclosed herein includes detecting the surface position of a mixture coated film by a first sensor; detecting the surface position of a second roll by a second sensor; detecting the film thickness of the mixture coated film based on detection results of the first sensor and the second sensor; and adjusting a relatively rotation speed of a third roll based on the film thickness. And, the detected positions of the first sensor and the second sensor in a circumferential direction of the second roll are substantially identical. Due to this method, the change in the film thickness of the electrode mixed layer of produced electrode can be suppressed.

Abstract: An operation program editing device includes a program editing portion configured to edit an operation program executable by a programmable controller that controls a facility, and the program editing portion includes a bypass circuit generation unit that generates a bypass circuit including a bypass path for skipping execution of some of the plurality of steps at a time of reactivation of the facility, a first selection receiving unit that receives selection of a last step, from among the plurality of steps, within a range where the execution is skipped by the bypass circuit, and a second selection receiving unit that receives selection of a first step, from among the plurality of steps, within the range where the execution is skipped by the bypass circuit.

Abstract: An operation program editing device includes a program editing portion configured to edit an operation program executable by a programmable controller that controls a facility, and the program editing portion includes a bypass circuit generation unit that generates a bypass circuit including a bypass path for skipping execution of some of the plurality of steps at a time of reactivation of the facility, a first selection receiving unit that receives selection of a last step, from among the plurality of steps, within a range where the execution is skipped by the bypass circuit, and a second selection receiving unit that receives selection of a first step, from among the plurality of steps, within the range where the execution is skipped by the bypass circuit.

Abstract: A method for producing a SiC single crystal, including flowing a high-frequency current at a first frequency to an induction heating coil disposed around a graphite crucible to heat raw material Si to a predetermined temperature, thereby while melting the raw material Si, dissolving out C from said graphite crucible to form a Si—C solution, and after heating to the predetermined temperature, lowering the frequency from the first frequency to a second frequency to warm and hold the Si—C solution.

Abstract: A monitoring device for a programmable controller includes: a display portion configured to display, on a display, a step that is being executed by the programmable controller among a plurality of steps in such a manner that the step can be distinguished from the other steps; a receiving portion configured to receive selection of a step serving as an initial point of reactivation in a case where a facility stops during a continuous operation by the programmable controller; and a change instruction generation portion configured to generate an instruction to the programmable controller so as to cause the programmable controller to restart execution of control processes from the step received by the receiving portion at the time of the reactivation.

Abstract: A method for producing a SiC single crystal, including flowing a high-frequency current at a first frequency to an induction heating coil disposed around a graphite crucible to heat raw material Si to a predetermined temperature, thereby while melting the raw material Si, dissolving out C from said graphite crucible to form a Si—C solution, and after heating to the predetermined temperature, lowering the frequency from the first frequency to a second frequency to warm and hold the Si—C solution.

Abstract: A monitoring device for a programmable controller includes: a display portion configured to display, on a display, a step that is being executed by the programmable controller among a plurality of steps in such a manner that the step can be distinguished from the other steps; a receiving portion configured to receive selection of a step serving as an initial point of reactivation in a case where a facility stops during a continuous operation by the programmable controller; and a change instruction generation portion configured to generate an instruction to the programmable controller so as to cause the programmable controller to restart execution of control processes from the step received by the receiving portion at the time of the reactivation.

Abstract: An operation program editing device includes a program editing portion configured to edit an operation program executable by a programmable controller that controls a facility, and the program editing portion includes a bypass circuit generation unit that generates a bypass circuit including a bypass path for skipping execution of some of the plurality of steps at a time of reactivation of the facility, a first selection receiving unit that receives selection of a last step, from among the plurality of steps, within a range where the execution is skipped by the bypass circuit, and a second selection receiving unit that receives selection of a first step, from among the plurality of steps, within the range where the execution is skipped by the bypass circuit.