Abstract: A semiconductor device according to an exemplary aspect of the invention is capable of being selectively switched between an oscillation circuit and a signal input-output circuit, and includes first and second external connecting terminals that are connectable to an oscillation device; an inverting amplifier an input side of which is electrically connected to the first external connecting terminal through a coupling capacitor and an output side of which is electrically connected to the second external connecting terminal; a feedback resistor connected to the input side and the output side of the inverting amplifier; a bias stabilization circuit that stabilizes a bias applied to the coupling capacitor; a first signal input-output portion connected to the first external connecting terminal; and a second signal input-output portion connected to the second external connecting terminal.

Abstract: A semiconductor device according to an exemplary aspect of the invention is capable of being selectively switched between an oscillation circuit and a signal input-output circuit, and includes first and second external connecting terminals that are connectable to an oscillation device; an inverting amplifier an input side of which is electrically connected to the first external connecting terminal through a coupling capacitor and an output side of which is electrically connected to the second external connecting terminal; a feedback resistor connected to the input side and the output side of the inverting amplifier; a bias stabilization circuit that stabilizes a bias applied to the coupling capacitor; a first signal input-output portion connected to the first external connecting terminal; and a second signal input-output portion connected to the second external connecting terminal.

Abstract: A semiconductor device according to an exemplary aspect of the invention is capable of being selectively switched between an oscillation circuit and a signal input-output circuit, and includes first and second external connecting terminals that are connectable to an oscillation device; an inverting amplifier an input side of which is electrically connected to the first external connecting terminal through a coupling capacitor and an output side of which is electrically connected to the second external connecting terminal; a feedback resistor connected to the input side and the output side of the inverting amplifier; a bias stabilization circuit that stabilizes a bias applied to the coupling capacitor; a first signal input-output portion connected to the first external connecting terminal; and a second signal input-output portion connected to the second external connecting terminal.

Abstract: A semiconductor device according to an exemplary aspect of the invention is capable of being selectively switched between an oscillation circuit and a signal input-output circuit, and includes first and second external connecting terminals that are connectable to an oscillation device; an inverting amplifier an input side of which is electrically connected to the first external connecting terminal through a coupling capacitor and an output side of which is electrically connected to the second external connecting terminal; a feedback resistor connected to the input side and the output side of the inverting amplifier; a bias stabilization circuit that stabilizes a bias applied to the coupling capacitor; a first signal input-output portion connected to the first external connecting terminal; and a second signal input-output portion connected to the second external connecting terminal.

Abstract: A constant current circuit in which the gradient of the temperature characteristic of a constant current which is output by the circuit includes a current source (11); a diode-connected N-channel MOS transistor (M1) having the current source connected to a drain thereof; a resistance element (RA1) connected between a source of the N-channel MOS transistor (M1) and ground and having a first temperature coefficient; an N-channel MOS transistor (M2) having a gate connected to a gate of the N-channel MOS transistor M1; and a resistance element (RA2), which has the first temperature coefficient, and a resistance element (RB2), which has a second temperature coefficient, connected between a source of the N-channel MOS transistor (M2) and ground; wherein the drain of the N-channel MOS transistor (M2) serves as an output terminal (12).

Abstract: A voltage-pulse converting circuit according to an embodiment of the invention includes: a first input terminal and a second input terminal applied with an input voltage to be converted into a pulse; an integrator having positive and negative input terminals; an input switching unit switching connection between the first and second input terminal and the positive and negative input terminals of the integrator; and a first comparator comparing a first detection voltage with an output voltage of the integrator and a second comparator comparing a second detection voltage different from the first detection voltage with the output voltage, the input switching unit switching the connection based on a comparison result of the first and second comparators.

Abstract: A voltage-pulse converting circuit according to an embodiment of the invention includes: a first input terminal and a second input terminal applied with an input voltage to be converted into a pulse; an integrator having positive and negative input terminals; an input switching unit switching connection between the first and second input terminal and the positive and negative input terminals of the integrator; and a first comparator comparing a first detection voltage with an output voltage of the integrator and a second comparator comparing a second detection voltage different from the first detection voltage with the output voltage, the input switching unit switching the connection based on a comparison result of the first and second comparators.

Abstract: A voltage follower and a semiconductor integrated circuit including the voltage follower. In the voltage follower, an output voltage Vout from a source follower output transistor 8 is negative fed back to a gate electrode of the source follower output transistor 8 via a differential amplifier 1. A clamp circuit 28 is provided which clamps the gate potential of the source follower transistor 8 by using a source and backgate potential of the source follower transistor 8, that is, potential at an output terminal 53, as a reference potential. Since the source-gate voltage of the source follower transistor 8 is clamped at a predetermined voltage and thus the maximum electric field applied to the gate oxide film is reduced, it becomes possible to use a MOS transistor having thin gate oxide film and short channel length and having high current drive ability, as a source follower transistor, even when a power supply voltage is high.

Abstract: The present invention provides a switching regulator: a switching circuit for switching a transmission of an input voltage to an output terminal; a control circuit connected to the switching device for sending a control pulse signal to the switching circuit, so that the switching circuit switches the transmission of the input voltage on the basis of the control pulse signal; and a pulse width varying circuit connected to the control circuit for varying a pulse width of the control pulse signal from the control circuit.

Abstract: A P-channel field effect transistor (FET) T5 is connected between a constant current circuit constituted by first and second P-channel FETs T1 and T2 and first and second N-channel FETs T6 and T7, and a resistor, and a voltage detecting circuit. A gate of the FET T5 is connected to an output of the voltage detecting circuit, a drain of which is connected to the gates of the FETs T6 and T7, and a source of which is connected to a power supply. The FET T5 operates so as to quickly start the constant current circuit when powered.