Abstract: Provided is a polishing pad which is capable of providing a high flatness to a polishing workpiece and suppressing the formation of scratches, and a method therefor. The polishing pad comprises a foamed urethane sheet on the surface which includes closed cells and open cells and which satisfies the following requirements: (1) an open cell ratio is 20-80 vol % where the total volume of closed cells and open cells is taken as 100 vol %, (2) the ratio [tan ? (wet/dry) ratio] of a loss factor tan ? in a water-absorption state to that in a dry state is 1.3-1.7, the loss factors being measured according to JIS K7244-4 with an initial load of 20 g at a measuring frequency of 1 Hz at a temperature of 26° C. in a tensile mode over a strain range from 0.01 to 0.1%, and (3) the Shore DO hardness according to ASTM D2240 is 60-80.

Abstract: A polishing pad for polishing a semiconductor device and manufacturing method therefor, the polishing pad comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein an M-component of the polyurethane-polyurea resin foam has a spin-spin relaxation time T2 of 160 to 260 ?s, the polyurethane-polyurea resin foam has a storage elastic modulus E? of 1 to 30 MPa, the storage elastic modulus E? being measured at 40° C. with an initial load of 10 g, a strain range of 0.01 to 4%, and a measuring frequency of 0.2 Hz in a tensile mode, and the polyurethane-polyurea resin foam has a density D in a range from 0.30 to 0.60 g/cm3. The polishing pad remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and can be used for primary polishing or finish polishing.

Abstract: Provided is a polishing pad which is capable of providing a high flatness to a polishing workpiece and suppressing the formation of scratches, and a method therefor. The polishing pad comprises a foamed urethane sheet on the surface which includes closed cells and open cells and which satisfies the following requirements: (1) an open cell ratio is 20-80 vol % where the total volume of closed cells and open cells is taken as 100 vol %, (2) the ratio [tan ? (wet/dry) ratio] of a loss factor tan ? in a water-absorption state to that in a dry state is 1.3-1.7, the loss factors being measured according to JIS K7244-4 with an initial load of 20 g at a measuring frequency of 1 Hz at a temperature of 26° C. in a tensile mode over a strain range from 0.01 to 0.1%, and (3) the Shore DO hardness according to ASTM D2240 is 60-80.

Abstract: Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a hard segment content (HSC) in a range from 26 to 34%, and has a density D in a range from 0.30 to 0.60 g/cm3, the hard segment content (HSC) being determined by the following formula (1): HSC=100×(r?1)×(Mdi+Mda)÷(Mg+r×Mdi+(r?1)×Mda)??(1).

Abstract: The present invention provides a lapping plate, which provides a high lapping rate and also can suppress the generation of scratches on a surface of a polishing workpiece. The present invention provides a resin lapping plate comprising a resin sheet comprising a thermosetting polyurethane resin and having an opening rate of 10 to 50% and a Young's modulus of 7.0×107 to 5.0×108 N/m2.

Abstract: Provided are: a polishing pad which is capable of alleviating a scratch problem that occurs when a conventional hard (dry) polishing pad is used, and which is excellent in polishing rate and polishing uniformity and is usable not only for primary polishing but also for finish polishing; and a method for producing the polishing pad. The polishing pad is for polishing a semiconductor device and includes a polishing layer having a polyurethane-polyurea resin molded body containing cells of a substantially spherical shape. The polyurethane-polyurea resin molded body has a ratio of closed cells of 60 to 98%. The polyurethane-polyurea resin molded body has a ratio tan ? of a loss modulus E? to a storage modulus E? (loss modulus/storage modulus) of 0.15 to 0.30. The storage modulus E? is 1 to 100 MPa. The polyurethane-polyurea resin molded body has a density D of 0.4 to 0.8 g/cm3.

Abstract: The present invention provides a lapping plate, which provides a high lapping rate and also can suppress the generation of scratches on a surface of a polishing workpiece. The present invention provides a resin lapping plate comprising a resin sheet comprising a thermosetting polyurethane resin and having an opening rate of 10 to 50% and a Young's modulus of 7.0×107 to 5.0×108 N/m2.

Abstract: Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a Young's modulus E in a range from 450 to 30000 kPa, and a density D in a range from 0.30 to 0.60 g/cm3.

Abstract: Provided are: a polishing pad which is capable of alleviating a scratch problem that occurs when a conventional hard (dry) polishing pad is used, and which is excellent in polishing rate and polishing uniformity and is usable not only for primary polishing but also for finish polishing; and a method for producing the polishing pad. The polishing pad is for polishing a semiconductor device and includes a polishing layer having a polyurethane-polyurea resin molded body containing cells of a substantially spherical shape. The polyurethane-polyurea resin molded body has a ratio of closed cells of 60 to 98%. The polyurethane-polyurea resin molded body has a ratio tan ? of a loss modulus E? to a storage modulus E? (loss modulus/storage modulus) of 0.15 to 0.30. The storage modulus E? is 1 to 100 MPa. The polyurethane-polyurea resin molded body has a density D of 0.4 to 0.8 g/cm3.

Abstract: Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a Young's modulus E in a range from 450 to 30000 kPa, and a density D in a range from 0.30 to 0.60 g/cm3.

Abstract: A polishing pad for polishing a semiconductor device and manufacturing method therefor, the polishing pad comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein an M-component of the polyurethane-polyurea resin foam has a spin-spin relaxation time T2 of 160 to 260 ?s, the polyurethane-polyurea resin foam has a storage elastic modulus E? of 1 to 30 MPa, the storage elastic modulus E? being measured at 40° C. with an initial load of 10 g, a strain range of 0.01 to 4%, and a measuring frequency of 0.2 Hz in a tensile mode, and the polyurethane-polyurea resin foam has a density D in a range from 0.30 to 0.60 g/cm3. The polishing pad remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and can be used for primary polishing or finish polishing.

Abstract: Provided are a polishing pad which remedies the problem of scratches occurring when a conventional hard (dry) polishing pad is used, which is excellent in polishing rate and polishing uniformity, and which can be used for not only primary polishing but also finish polishing, and a manufacturing method therefor. The polishing pad is a polishing pad for polishing a semiconductor device, comprising a polishing layer having a polyurethane-polyurea resin foam containing substantially spherical cells, wherein the polyurethane-polyurea resin foam has a hard segment content (HSC) in a range from 26 to 34%, and has a density D in a range from 0.30 to 0.60 g/cm3, the hard segment content (HSC) being determined by the following formula (1): HSC=100×(r?1)×(Mdi+Mda)÷(Mg+r×Mdi+(r?1)×Mda)??(1).