Abstract: The nozzle for cold spray (25) used in a cold spray apparatus (2) is configured to include a tubular nozzle main body (252) and a cooling jacket (253) that surrounds the nozzle main body (252) to form a flow path (25e) for refrigerant (R) between the nozzle main body (252) and the cooling jacket (253). The cooling jacket (253) is provided with a seal retaining portion (253c) that retains an O-ring (253b) for the flow path (25e). The seal retaining portion (253c) and the nozzle main body (252) are joined in a socket-and-spigot joint fashion.

Abstract: A film formation portion is formed on an annular edge portion along an opening portion (16a) of an intake port (16) or an opening portion (17a) of an exhaust port (17). The cross section, along the radial direction of the intake port (16) or the exhaust port (17), of the film formation portion, on which a metal film (5) is formed by spraying a raw material powder using a cold spray method, is formed in a groove shape that includes a flat bottom surface (G1) and a pair of side surfaces (G2) adjacent to the bottom surface.

Abstract: A film forming method forms a coating film on a workpiece (e.g., a cylinder head) having a film-deposited portion (e.g., an annular valve seat part) by moving a nozzle of a cold spray device relative to the workpiece along a film formation trajectory having a film formation starting point and a film formation finishing point in which the film-deposited portion overlaps to form an overlapping portion. The coating film is formed by causing a raw material powder to collide in a solid-phase state with the workpiece and plastically deform. Also, the coating film on the film-deposited portion is further formed such that an inclination angle of an end part of the coating film relative to a surface of the film-deposited portion is 45° or less at the film formation starting point of the overlapping portion.

Abstract: When forming valve seat coats at opening portions (16a1 to 16a8) of intake ports (16) provided at a cylinder block mounting surface (12a) of a semimanufactured cylinder head (3), the nozzle of a cold spray apparatus moves along a nozzle movement path for air intake (Inp1) that is set between any two of the plurality of opening portions (16a1 to 16a8), while continuing to spray a raw material powder. When forming valve seat coats at opening portions (17a1 to 17a8) of exhaust ports (17), the nozzle moves along a nozzle movement path for air exhaust (Enp1) that is set between any two of the plurality of opening portions (17a1 to 17a8), while continuing to spray the raw material powder.

Abstract: A cold spray device basically include at least a pedestal, a base plate, a motor, a spray gun, a high-pressure pipe and a rotating joint. The pedestal is configured to support a workpiece in a predetermined orientation. The base plate is disposed in a position away from the workpiece. The motor is arranged to cause the base plate to rotate about a rotational axis. The spray gun is mounted on the base plate so that a spray direction is directed toward the rotational axis. The high-pressure pipe guides a working gas to the spray gun. The rotating joint is provided to a base end of the high-pressure pipe. The high-pressure pipe is arranged along the rotational axis.

Abstract: A film forming method forms a coating film on a workpiece having at least two film-deposited portions which are not continuous with each other by moving a nozzle of a cold spray device relative to each other along a continuous movement trajectory. The movement trajectory includes at least two trajectories corresponding to the film-deposited portions and a connecting trajectory linking the trajectories of the film-deposited portions. The film-deposited portions are formed by continuously spraying a raw material powder from the nozzle by cold spraying to form a coating film on each of the plurality of film-deposited portions. A turnback point of the spraying is set on the connecting trajectory where a relative speed between the workpiece and the nozzle decreases in the movement trajectory.

Abstract: A film forming method forms a coating film on a workpiece (e.g., a cylinder head) having a film-deposited portion (e.g., an annular valve seat part) by moving a nozzle of a cold spray device relative to the workpiece along a film formation trajectory having a film formation starting point and a film formation finishing point in which the film-deposited portion overlaps to form an overlapping portion. The coating film is formed by causing a raw material powder to collide in a solid-phase state with the workpiece and plastically deform. Also, the coating film on the film-deposited portion is further formed such that an inclination angle of an end part of the coating film relative to a surface of the film-deposited portion is 45° or less at the film formation starting point of the overlapping portion.

Abstract: When forming valve seat coats at opening portions (16a1 to 16a8) of intake ports (16) provided at a cylinder block mounting surface (12a) of a semimanufactured cylinder head (3), the nozzle of a cold spray apparatus moves along a nozzle movement path for air intake (Inp1) that is set between any two of the plurality of opening portions (16a1 to 16a8), while continuing to spray a raw material powder. When forming valve seat coats at opening portions (17a1 to 17a8) of exhaust ports (17), the nozzle moves along a nozzle movement path for air exhaust (Enp1) that is set between any two of the plurality of opening portions (17a1 to 17a8), while continuing to spray the raw material powder.

Abstract: The nozzle for cold spray (25) used in a cold spray apparatus (2) is configured to include a tubular nozzle main body (252) and a cooling jacket (253) that surrounds the nozzle main body (252) to form a flow path (25e) for refrigerant (R) between the nozzle main body (252) and the cooling jacket (253). The cooling jacket (253) is provided with a seal retaining portion (253c) that retains an O-ring (253b) for the flow path (25e). The seal retaining portion (253c) and the nozzle main body (252) are joined in a socket-and-spigot joint fashion.

Abstract: A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.

Abstract: A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.

Abstract: A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.

Abstract: A method of manufacturing a semiconductor device includes: a groove portion formation step of forming a groove portion in a base; a barrier layer formation step of forming a barrier layer that covers at least an inner wall surface of the groove portion; a seed layer formation step of forming a seed layer that covers the barrier layer; and a burial step of burying a conductive material in an inside region of the seed layer, wherein the seed layer is made of Cu, and the conductive material is made of Cu.

Abstract: There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state.

Abstract: A coating surface processing method includes forming a coating on the entire surface of a base body that has fine holes or fine grooves formed on the to-be-filmed surface, including the inner wall surfaces and the inner bottom surfaces of the holes or the grooves, and flattening the coating formed on the inner wall surfaces of the holes or the grooves by carrying out a plasma processing on the surface of the coating.

Abstract: A film formation apparatus includes: a chamber having a side wall and an inner space in which both a body to be processed and a target are disposed a first magnetic field generation section generating a magnetic field in the inner space a second magnetic field generation section disposed at a position close to the target, the second magnetic field generation section generating a magnetic field so as to allow perpendicular magnetic lines of force thereof to pass through a position adjacent to the target; and a third magnetic field generation section disposed at a position close to the body to be processed, the third magnetic field generation section generating a magnetic field so as to induce the magnetic lines of force to the side wall of the chamber.

Abstract: There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state.

Abstract: A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.

Abstract: A film formation apparatus includes: a chamber in which both a body to be processed and a target are disposed; a first magnetic field generation section generating a magnetic field; and a second magnetic field generation section including a first generation portion to which a current defined as “Iu” is applied and a second generation portion to which a current defined as “Id” is applied, the first generation portion being disposed at a position close to the target, the second generation portion being disposed at a position close to the body to be processed, the second magnetic field generation section applying the currents to the first generation portion and the second generation portion so as to satisfy the relational expression Id<Iu, the second magnetic field generation section allowing perpendicular magnetic lines to pass between the target and the body to be processed.