Patents by Inventor Koukichi Ouhata

Koukichi Ouhata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5246741
    Abstract: A substrate to be modified is placed in a vacuum vessel, a reducing atmosphere is provided over the substrate and simultaneously therewith the substrate is irradiated with accelerated ions, whereby oxygen which bonds to the substrate is freed from the substrate, the oxygen bonds to a material which forms the reducing atmosphere and the surface of the substrate is modified by the accelerated ion. The surface of the substrate can be thus efficiently modifed at relatively low temperatures. Furthermore, by evaporating carbon for an alumina substrate or alumina powder or providing hydrocarbon gas over the alumina substrate or alumina powder in a vacuum vessel, the alumina substrate or alumina powder is providing in the reducing atmosphere and the alumina substrate or alumina powder is irradiated with accelerated nitrogen ions from an ion source, whereby aluminum and oxygen which constitute the alumina substrate or alumina powder are cut off from each other by irradiation with the accelerated nitrogen ions.
    Type: Grant
    Filed: December 20, 1990
    Date of Patent: September 21, 1993
    Assignee: Hitachi, Ltd.
    Inventors: Koukichi Ouhata, Kenichi Natsui
  • Patent number: 5064520
    Abstract: This invention relates to a method and an apparatus for forming a film, which are suitable for forming a film of a semiconductor, dielectric, metal, insulator, or organic substance. In order to form a film of high purity and quality at high speed, a particle beam such as an ion beam, an electron beam, or a plasma is applied to a sputtering target comprising a substance formed by bonding atoms or molecules with either van der Waals forces or hydrogen bonding forces, the particles are sputtered thereby from the target, fly in the space in the vacuum chamber, reach the substrate on which they are deposited to form a desired film.
    Type: Grant
    Filed: February 14, 1990
    Date of Patent: November 12, 1991
    Assignee: Hitachi, Ltd.
    Inventors: Kiyoshi Miyake, Yasunori Ohno, Masato Isogai, Yukio Nakagawa, Takayoshi Seki, Koukichi Ouhata, Kenichi Natsui, Terunori Warabisako, Keiji Arimatsu
  • Patent number: 4503357
    Abstract: A cathode-ray tube has in a neck section of a hermetically sealed, evacuated envelope an electron-gun mount assembly in which of a cathode for emitting an electron beam, a first grid electrode section for forming a crossover point and for accelerating the electron beam and a second grid electrode section for focusing the electron beam are mounted on a plurality of insulative supporting bars. A conductive member is provided on an outer surface portion of the neck section, an inner surface portion thereof, and/or an outer surface portion of the supporting bars which surround a portion of the electron-gun mount assembly including the first grid electrode section but excepting the second grid electrode section.
    Type: Grant
    Filed: December 23, 1982
    Date of Patent: March 5, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Koukichi Ouhata, Hiroyuki Sugawara