Abstract: An apparatus for examining spectral characteristics of an object may include a chuck configured to support and releasably fix the object, wherein the chuck is larger than the object, a first light source assembly integral with the chuck and configured to illuminate a bottom surface of the object with light having a predetermined spectrum and intensity, and a transmission analysis unit for collecting and analyzing light transmitted through the object. The first light source assembly may include multiple and/or adjustable light sources. A second light source assembly may illuminate a top surface of the object, and a reflection analysis unit may collect resultant reflected light.

Abstract: A wafer inspection system includes an electrical testing part to control a probe to be in contact with a pad of a wafer to perform a predetermined electrical test, a defect detecting part to detect a defect in the wafer passing through the electrical test, a defect sorting part to sort the defect detected in the defect detecting part by an in-line method, and a defective determining part to determine whether the wafer is a defective according to a sorting result of the defect sorting part. The wafer inspection system and a method thereof can determine the kinds of the defect in the wafer during a fabricating procedure, so that it is possible to instantly and correctly determine whether the die on the wafer is a defective.

Abstract: For an automatic defect inspection of an edge exposure area of a wafer, an optical unit supplies a light beam onto the edge portion of a wafer and a detection unit detects light reflected from the edge portion. The detection unit converts the detected light into an electrical signal to transmit the electrical signal to a processing unit. The processing unit analyzes the electrical signal to measure the reflectivity of the edge portion, compares the measured reflectivity with a reference reflectivity, and calculates the width of the edge exposure area. The processing unit compares the calculated width with a reference width to detect any defect in the edge exposure area.

Abstract: A system and method of measuring a distance of semiconductor patterns is provided. The system includes a microscope and a control unit. The control unit calculates standard coordinates of standard points in view-fields that include spots, spot coordinates of spots with respect to standard points, real coordinates of spots from both of the standard coordinates and spot coordinates, and finally the distance between the two spots from the first and second real coordinates. Coordinates are determined using high magnification, in conjunction with pixel counting, allowing more precise distance measurements.

Abstract: An apparatus for examining spectral characteristics of an object may include a chuck configured to support and releasably fix the object, wherein the chuck is larger than the object, a first light source assembly integral with the chuck and configured to illuminate a bottom surface of the object with light having a predetermined spectrum and intensity, and a transmission analysis unit for collecting and analyzing light transmitted through the object. The first light source assembly may include multiple and/or adjustable light sources. A second light source assembly may illuminate a top surface of the object, and a reflection analysis unit may collect resultant reflected light.

Abstract: A wafer inspection system includes an electrical testing part to control a probe to be in contact with a pad of a wafer to perform a predetermined electrical test, a defect detecting part to detect a defect in the wafer passing through the electrical test, a defect sorting part to sort the defect detected in the defect detecting part by an in-line method, and a defective determining part to determine whether the wafer is a defective according to a sorting result of the defect sorting part. The wafer inspection system and a method thereof can determine the kinds of the defect in the wafer during a fabricating procedure, so that it is possible to instantly and correctly determine whether the die on the wafer is a defective.

Abstract: A system and method of measuring a distance of semiconductor patterns is provided. The system includes a microscope and a control unit. The control unit calculates standard coordinates of standard points in view-fields that include spots, spot coordinates of spots with respect to standard points, real coordinates of spots from both of the standard coordinates and spot coordinates, and finally the distance between the two spots from the first and second real coordinates. Coordinates are determined using high magnification, in conjunction with pixel counting, allowing more precise distance measurements.

Abstract: A method of measuring a concentration of a material includes irradiating an infrared light onto a substrate having a layer including a first material and dopants, wherein the infrared light is partially absorbed by and partially transmitted through the substrate including the layer. Intensities of the infrared light absorbed in the first material and the dopants are computed according to light wave numbers by utilizing a difference between intensities of the infrared light before and after transmitting the substrate and layer and by utilizing a difference between intensities of the infrared light absorbed in the substrate and layer and absorbed in only the substrate. Concentrations of the dopants are obtained by utilizing a ratio of light wave number regions corresponding to predetermined intensities of infrared light absorbed in the dopants relative to light wave number regions corresponding to the predetermined intensity of infrared light absorbed in the first material.

Abstract: For an automatic defect inspection of an edge exposure area of a wafer, an optical unit supplies a light beam onto the edge portion of a wafer and a detection unit detects light reflected from the edge portion. The detection unit converts the detected light into an electrical signal to transmit the electrical signal to a processing unit. The processing unit analyzes the electrical signal to measure the reflectivity of the edge portion, compares the measured reflectivity with a reference reflectivity, and calculates the width of the edge exposure area. The processing unit compares the calculated width with a reference width to detect any defect in the edge exposure area.

Abstract: A method of measuring a concentration of a material includes irradiating an infrared light onto a substrate having a layer including a first material and dopants, wherein the infrared light is partially absorbed by and partially transmitted through the substrate including the layer. Intensities of the infrared light absorbed in the first material and the dopants are computed according to light wave numbers by utilizing a difference between intensities of the infrared light before and after transmitting the substrate and layer and by utilizing a difference between intensities of the infrared light absorbed in the substrate and layer and absorbed in only the substrate. Concentrations of the dopants are obtained by utilizing a ratio of light wave number regions corresponding to predetermined intensities of infrared light absorbed in the dopants relative to light wave number regions corresponding to the predetermined intensity of infrared light absorbed in the first material.