Patents by Inventor Kousaku Miyake

Kousaku Miyake has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetoresistive effect element and manufacturing method thereof, and magnetic head, magnetic reproducing apparatus, and magnetic memory using the same
    Patent number: 7719800
    Abstract: An example magnetoresistive effect element includes a magnetoresistive effect film including a magnetization pinned layer, a magnetization free layer, and an intermediate layer interposed therebetween and having a magnetic region and a nonmagnetic region whose electrical resistance is higher than the magnetic region. A sense current is passed to the magnetoresistive effect film in a direction substantially perpendicular to the film plane thereof. The magnetic region of the intermediate layer penetrates the nonmagnetic region locally and extends in the direction substantially perpendicular to the film plane. The nonmagnetic region contains a nonmagnetic metallic element having a larger surface energy than a magnetic metallic element contained in the magnetic region.
    Type: Grant
    Filed: December 26, 2006
    Date of Patent: May 18, 2010
    Assignees: Kabuhsiki Kaisha Toshiba, TDK Corporation
    Inventors: Susumu Hashimoto, Hiromi Fuke, Hitoshi Iwasaki, Masaaki Doi, Kousaku Miyake, Masashi Sahashi
  • Magnetoresistive effect element, magnetic head, magnetic reproducing apparatus, and manufacturing method thereof
    Publication number: 20080013218
    Abstract: A magnetoresistive effect element, includes: a magnetoresistive effect film including: a magnetization fixed layer having a first ferromagnetic film of which magnetization direction is practically fixed in one direction; a magnetization free layer having a second ferromagnetic film of which magnetization direction changes with corresponding to an external magnetic field; and a spacer layer disposed between the magnetization fixed layer and magnetization free layer, and having an insulating layer and a ferromagnetic metal portion penetrating through the insulating layer; a pair of electrodes applying a sense current in a perpendicular direction relative to a film surface of the magnetoresistive effect film; and a layer containing a non-ferromagnetic element disposed at least one of an inside of the magnetization fixed layer-and an inside of the magnetization free layer.
    Type: Application
    Filed: July 9, 2007
    Publication date: January 17, 2008
    Applicants: KABUSHIKI KAISHA TOSHIBA, TDK CORPORATION
    Inventors: Hiromi Fuke, Susumu Hashimoto, Masayuki Takagishi, Hitoshi Iwasaki, Masashi Sahashi, Masaaki Doi, Kousaku Miyake
  • Magnetoresistive effect element and manufacturing method thereof, and magnetic head, magnetic reproducing apparatus, and magnetic memory using the same
    Publication number: 20070159733
    Abstract: A magnetoresistive effect element includes a magnetoresistive effect film including a magnetization pinned layer, a magnetization free layer, and an intermediate layer interposed therebetween and having a magnetic region and a nonmagnetic region whose electrical resistance is higher than the magnetic region. A sense current is passed to the magnetoresistive effect film in a direction substantially perpendicular to the film plane thereof. The magnetic region of the intermediate layer penetrates the nonmagnetic region locally and extends in the direction substantially perpendicular to the film plane. The nonmagnetic region contains a nonmagnetic metallic element having a larger surface energy than a magnetic metallic element contained in the magnetic region.
    Type: Application
    Filed: December 26, 2006
    Publication date: July 12, 2007
    Applicants: Kabushiki Kaisha Toshiba, TDK Corporation
    Inventors: Susumu Hashimoto, Hiromi Fuke, Hitoshi Iwasaki, Masaaki Doi, Kousaku Miyake, Masashi Sahashi