Abstract: A method of fabricating a field effect thin film transistor is provided, in which, after a first amorphous semiconductor layer having a predetermined thickness is deposited on a gate insulating film, the first amorphous semiconductor layer is transformed to a micro-crystal semiconductor layer by exposing it to hydrogen plasma produced by hydrogen discharge and, then, a second amorphous semiconductor layer is deposited on the micro-crystal semiconductor layer. According to this method, it is possible to fabricate a high performance and high quality field effect thin film transistor through a simplified step of forming the micro-crystal semiconductor which becomes a channel region thereof.

Abstract: A method for fabricating a silicon-germanium thin film field effect transistor (TFT) with a high carrier mobility and a high on/off ratio. An amorphous silicon layer, an amorphous germanium layer and a gate insulating film are successively layered on an insulating substrate on which a pair of source and drain electrodes are formed. Next, the amorphous silicon layer and the amorphous germanium layer are converted into polycrystalline layers by thermal annealing at a temperature higher than 600.degree. C. or laser annealing. Then, a gate electrode is formed on the gate insulating film.

Abstract: A photoelectric conversion element having an improved 8 characteristic is constructed of an insulation film and a photoelectric conversion film formed as islands. These films are stacked successively on a shield film formed on a transparent insulating substrate. Electrodes that connect the islands of the photoelectric conversion film together are formed at prescribed intervals and in prescribed widths so that each of the electrodes covers the upper surface of a different end portion of the photoelectric conversion film. A low resistance film is provided between the photoelectric conversion film and each of the electrodes.

Abstract: A photoelectric conversion device is disclosed having a light shield layer made of a relatively low conductivity material. The light shield layer is provided on an insulating substrate and shades light passing through the insulating substrate toward the reverse surface of a photoelectric conversion layer such that light cannot reach the reverse surface of the photoelectric conversion layer directly.

Abstract: An image sensor of a planar type is so arranged that a photo electric conversion layer is provided on an insulating substrate, a pair of electrodes are provided on the photoelectric conversion layer, and a p-type region and an n-type region are provided to the two electrodes respectively at locations at which light incident on a surface of said photoelectric conversion layer is unintercepted. On the photo electric conversion layer, there is a transparent protective layer but there is no p.sup.+ -type layer or a transparent electrode. The quantum efficiency and the blocking capability are enhanced with the leakage current being reduced.

Abstract: A vertical motor pump including an upper bearing and a lower bearing located on the motor side for journaling a rotary shaft for rotation at an upper portion and a lower portion respectively of a rotor, at least one of the upper and lower bearings being constituted by a ball bearing. The vertical motor pump further includes a hydrostatic lubricated bearing system for journaling the rotary shaft besides the ball bearing, for bearing a radial thrust during operation.