Patents by Inventor Kousei Tamiya

Kousei Tamiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8930169
    Abstract: A capacitive ultrasonic transducer (c-MUT) comprising a silicon substrate and a transducer element which comprises transducer cells, each of which is constituted by a first electrode equipped on the top surface of the silicon substrate, a second electrode placed opposite to the first electrode with a predetermined gap therefrom and a membrane for supporting the second electrode, wherein a trench is equipped between the adjacent transducers and a conductive film is formed in the trench.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: January 6, 2015
    Assignee: Olympus Corporation
    Inventors: Hideo Adachi, Katsuhiro Wakabayashi, Akiko Mizunuma, Atsushi Osawa, Tatsuo Kaimai, Shinji Yasunaga, Kiyoshi Nemoto, Miyuki Murakami, Kousei Tamiya, Yu Kondo
  • Publication number: 20110213592
    Abstract: A capacitive ultrasonic transducer (c-MUT) comprising a silicon substrate and a transducer element which comprises transducer cells, each of which is constituted by a first electrode equipped on the top surface of the silicon substrate, a second electrode placed opposite to the first electrode with a predetermined gap therefrom and a membrane for supporting the second electrode, wherein a trench is equipped between the adjacent transducers and a conductive film is formed in the trench.
    Type: Application
    Filed: March 4, 2011
    Publication date: September 1, 2011
    Applicant: OLYMPUS CORPORATION
    Inventors: Hideo Adachi, Katsuhiro Wakabayashi, Akiko Mizunuma, Atsushi Osawa, Tatsuo Kaimai, Shinji Yasunaga, Kiyoshi Nemoto, Miyuki Murakami, Kousei Tamiya, Yu Kondo
  • Publication number: 20070299345
    Abstract: A capacitive ultrasonic transducer (c-MUT) comprising a silicon substrate and a transducer element which comprises transducer cells, each of which is constituted by a first electrode equipped on the top surface of the silicon substrate, a second electrode placed opposite to the first electrode with a predetermined gap therefrom and a membrane for supporting the second electrode, wherein a trench is equipped between the adjacent transducers and a conductive film is formed in the trench.
    Type: Application
    Filed: October 20, 2005
    Publication date: December 27, 2007
    Inventors: Hideo Adachi, Katsuhiro Wakabayashi, Akiko Mizunuma, Atsushi Osawa, Tatsuo Kaimai, Shinji Yasunaga, Kiyoshi Nemoto, Miyuki Murakami, Kousei Tamiya, Yu Kondo