Abstract: An increase of the via resistance resulted due to the presence of the altered layer that has been formed and grown after the formation of the via hole can be effectively prevented, thereby providing an improved reliability of the semiconductor device. A method includes: forming a TiN film on the semiconductor substrate; forming an interlayer insulating film on a surface of the TiN film; forming a resist film on a surface of the interlayer insulating film; etching the semiconductor substrate having the resist film formed thereon to form an opening, thereby partially exposing the TiN film; plasma-processing the exposed portion of the TiN film to remove an altered layer formed in the exposed portion of the TiN film; and stripping the resist film via a high temperature-plasma processing.

Abstract: The present invention relates to a method for manufacturing a semiconductor device, comprising: forming a metal interconnect on a substrate; forming a refractory metal layer containing titanium (Ti) or tantalum (Ta) on a surface of the metal interconnect; forming an insulating interlayer so as to cover the refractory metal layer; selectively etching the insulating interlayer with an etchant gas containing an organic fluoride to form a hole, in which the refractory metal layer is exposed; treating an interior of the hole with an organic chemical solution to remove fluorinated compounds of Ti or Ta while leaving fluorocarbons on the surface of the refractory metal layer, the fluorinated compounds of Ti or Ta and the fluorocarbons being created during the etching step and present in the interior of the hole; and performing plasma-treatment for the interior of said hole to remove the fluorocarbon.

Abstract: The present invention relates to a method for manufacturing a semiconductor device, comprising: forming a metal interconnect on a substrate; forming a refractory metal layer containing titanium (Ti) or tantalum (Ta) on a surface of the metal interconnect; forming an insulating interlayer so as to cover the refractory metal layer; selectively etching the insulating interlayer with an etchant gas containing an organic fluoride to form a hole, in which the refractory metal layer is exposed; treating an interior of the hole with an organic chemical solution to remove fluorinated compounds of Ti or Ta while leaving fluorocarbons on the surface of the refractory metal layer, the fluorinated compounds of Ti or Ta and the fluorocarbons being created during the etching step and present in the interior of the hole; and performing plasma-treatment for the interior of said hole to remove the fluorocarbon.

Abstract: An increase of the via resistance resulted due to the presence of the altered layer that has been formed and grown after the formation of the via hole can be effectively prevented, thereby providing an improved reliability of the semiconductor device. A method includes: forming a TiN film on the semiconductor substrate; forming an interlayer insulating film on a surface of the TiN film; forming a resist film on a surface of the interlayer insulating film; etching the semiconductor substrate having the resist film formed thereon to form an opening, thereby partially exposing the TiN film; plasma-processing the exposed portion of the TiN film to remove an altered layer formed in the exposed portion of the TiN film; and stripping the resist film via a high temperature-plasma processing.