Patents by Inventor Kousuke FUJIWARA

Kousuke FUJIWARA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic sensor, sensor unit, magnetic detection device, and magnetic measurement device
    Patent number: 10830840
    Abstract: There are provided: an element array 10a including a plurality of tunnel magnetoresistive elements 20 respectively having a fixed magnetic layer 21, a free magnetic layer 22, and an insulation layer 23 provided between the fixed magnetic layer 21 and the free magnetic layer 22, the elements respectively for varying the tunnel resistance of the insulation layer 23 by influence of an external magnetic field; and an electric circuit 30 that applies a voltage to a plurality of the tunnel magnetoresistive elements 20 forming the element array 10a, with the voltage to be applied to each tunnel magnetoresistive element being equal to or higher than 0.1 mV and equal to or lower than 50 mV.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: November 10, 2020
    Assignees: KONICA MINOLTA, INC., TOHOKU UNIVERSITY
    Inventors: Kousuke Fujiwara, Mikihiko Oogane, Yasuo Ando, Junichi Jono, Takashi Terauchi
  • METHOD FOR HEAT-TREATING METAL MOLDED ARTICLE AND MANUFACTURING METHOD
    Publication number: 20190338382
    Abstract: A method of heat-treating for a metal molded article includes: a shape holding layer formation step of forming on a shape holding layer having a melting point higher than a solidus temperature Ts of a composition of the metal molded article on a surface of the metal molded article by treating the metal molded article; and a first heat-treatment step of performing a first heat treatment on the metal molded article at a first temperature T1, after forming the shape holding layer. When a reference temperature Ta is a temperature lower than the solidus temperature Ts by 100° C., and Tm is the melting point of the shape holding layer, the shape holding layer formation step and the first heat-treatment step are performed so as to satisfy an expression Ta?T1?Tm.
    Type: Application
    Filed: January 31, 2018
    Publication date: November 7, 2019
    Inventors: Kousuke FUJIWARA, Hidetaka HARAGUCHI, Shuji TANIGAWA, Masashi KITAMURA, Masaki TANEIKE, Nobuhiko SAITO, Toshinobu OHARA
  • MAGNETIC SENSOR, SENSOR UNIT, MAGNETIC DETECTION DEVICE, AND MAGNETIC MEASUREMENT DEVICE
    Publication number: 20190018083
    Abstract: There are provided: an element array 10a including a plurality of tunnel magnetoresistive elements 20 respectively having a fixed magnetic layer 21, a free magnetic layer 22, and an insulation layer 23 provided between the fixed magnetic layer 21 and the free magnetic layer 22, the elements respectively for varying the tunnel resistance of the insulation layer 23 by influence of an external magnetic field; and an electric circuit 30 that applies a voltage to a plurality of the tunnel magnetoresistive elements 20 forming the element array 10a, with the voltage to be applied to each tunnel magnetoresistive element being equal to or higher than 0.1 mV and equal to or lower than 50 mV.
    Type: Application
    Filed: December 28, 2016
    Publication date: January 17, 2019
    Inventors: Kousuke FUJIWARA, Mikihiko Oogane, Yasuo Ando, Junichi JONO