Abstract: A Group III nitride seed crystal substrate for use in a method for producing a large-sized Group III nitride crystal with few defects is provided. A Group III nitride seed crystal substrate for use in a method for producing a Group III nitride crystal, includes: a substrate; and a plurality of Group III nitride seed crystals arranged over the flat surface of a main surface of the substrate.

Abstract: A method for manufacturing a Group III nitride crystal, the method including: bringing a surface of a Group III nitride seed crystal into contact with a melt including at least one Group III element selected from among gallium, aluminum, and indium and an alkali metal in an atmosphere containing nitrogen to cause the Group III element and the nitrogen to react with each other in the melt to grow a Group III nitride crystal on the Group III nitride seed crystal, the method includes: growing a plurality of island-like Group III nitride crystal nuclei on the surface of the Group III nitride seed crystal; growing a first Group III nitride crystal having an inverted triangular shape or a trapezoidal shape in section from each of the plurality of island-like Group III nitride crystal nuclei; and growing a second Group III nitride crystal such that the second Group III nitride crystal fills a depression of the first Group III nitride crystal to form the second Group III nitride crystal having a flat surface, wherein

Abstract: A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

Abstract: A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.

Abstract: A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal.

Abstract: A production method for a group III nitride crystal, the production method includes: preparing a plurality of group III nitride pieces as a plurality of seed crystals on a substrate, and growing a group III nitride crystal by bringing a surface of each of the seed crystals into contact with a melt that comprises at least one group III element selected from gallium, aluminum, and indium, and an alkali metal in an atmosphere comprising nitrogen, and thereby reacting the group III element and the nitrogen in the melt, wherein the step of growing a group III nitride crystal includes: growing a plurality of first group III nitride crystals whose cross-sections each have a triangular shape or a trapezoidal shape, from the plurality of seed crystals; and growing second group III nitride crystals each in a gap among the plurality of first group III nitride crystals.

Abstract: A plurality of assembly sheets are placed on an upper surface of a substrate adsorption platform, and a pressing plate is placed on the plurality of assembly sheets placed on the substrate adsorption platform such that the plurality of assembly sheets are pressed by the pressing plate. In this state, a DC power supply device is turned on and causes the upper surface of the substrate adsorption platform to be charged, thereby causing the plurality of assembly sheets to be adsorbed on the upper surface by an electrostatic force. Then, the pressing plate placed on the plurality of assembly sheets is removed while the upper surface of the substrate adsorption platform is charged, and automatic appearance inspection is performed on the plurality of assembly sheets adsorbed on the upper surface of the substrate adsorption platform.

Abstract: An exposure system includes an exposure device and an image processing device. The exposure device includes a plurality of cameras. Each of the cameras is configured so as to be selectively set to a full scan mode and a partial scan mode. The camera transmits all of obtained image data in the full scan mode, and extracts part of the obtained image data and transmits the partial image data in the partial scan mode. The image processing device paratactically performs processing using the image data transmitted from the camera and processing using the image data transmitted from the camera.

Abstract: When an alignment mark does not exist within an area of an image obtained by a camera, the coordinate of the alignment mark is calculated based on an identification mark existing in the area of the image and a previously stored positional relationship between the alignment mark and the identification mark. A distance by which a long-sized base material is to be moved for causing the alignment mark to be positioned within the imaging area of the camera is calculated based on the calculated coordinate of the alignment mark, and the long-sized base material is moved by the calculated distance.

Abstract: An exposure system includes an exposure device and an image processing device. The exposure device includes a plurality of cameras. Each of the cameras is configured so as to be selectively set to a full scan mode and a partial scan mode. The camera transmits all of obtained image data in the full scan mode, and extracts part of the obtained image data and transmits the partial image data in the partial scan mode. The image processing device paratactically performs processing using the image data transmitted from the camera and processing using the image data transmitted from the camera.

Abstract: When an alignment mark does not exist within an area of an image obtained by a camera, the coordinate of the alignment mark is calculated based on an identification mark existing in the area of the image and a previously stored positional relationship between the alignment mark and the identification mark. A distance by which a long-sized base material is to be moved for causing the alignment mark to be positioned within the imaging area of the camera is calculated based on the calculated coordinate of the alignment mark, and the long-sized base material is moved by the calculated distance.

Abstract: A plurality of assembly sheets are placed on an upper surface of a substrate adsorption platform, and a pressing plate is placed on the plurality of assembly sheets placed on the substrate adsorption platform such that the plurality of assembly sheets are pressed by the pressing plate. In this state, a DC power supply device is turned on and causes the upper surface of the substrate adsorption platform to be charged, thereby causing the plurality of assembly sheets to be adsorbed on the upper surface by an electrostatic force. Then, the pressing plate placed on the plurality of assembly sheets is removed while the upper surface of the substrate adsorption platform is charged, and automatic appearance inspection is performed on the plurality of assembly sheets adsorbed on the upper surface of the substrate adsorption platform.

Abstract: A vehicle body structure has a chassis frame to which a pair of side sills are rigidly connected sideways by a plurality of connecting bracket assemblies. One of the connecting bracket assemblies is disposed between a pair of pillars and includes an outer bracket member connected to each side sill and an inner bracket member connected to the chassis frame.

Abstract: A vehicle body side member of a closed sectional construction extending in the widthwise direction of a vehicle body is provided between right and left roof pillars of a vehicle body and a first unit which comprises at least a cowl member and a windshield wiper system provided in the cowl member and a second unit which comprises at least an instrument panel and a steering system are mounted in the front of the vehicle body side member and in the rear of the vehicle body side member respectively. By this arrangement, the assembling operation of members and systems attached around a dash panel can be easier and accordingly, the simpler and faster operation can be planned. Also, the endurance efficiency for collision shock can be improved by restricting both units moving to the rear on a head-on collision by the above vehicle body side member.